1200V, 20A Silicon Carbide Power MOSFET

SENSITRON
______
SEMICONDUCTOR
SHD626532
DATASHEET 5312, REV -
1200V, 20A Silicon Carbide Power MOSFET



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
Through-hole hermetic package
Low Rdson over full temperature range
Low switching losses
Very low capacitance
JANTX / JANS screening options available
Maximum Ratings
PARAMETER
SYMBOL
0
Continuous Drain Current
Vgs = 20V, Tc=25 C
VALUE
UNIT
Id
20
11
A
Idpulse
60
A
Vgs
-10, +25
V
Ptot
120
W
0
Tc=100 C
0
Pulsed Drain Current
Tc=25 C
Gate Source Voltage
0
Power Dissipation
Tc=25 C
Operating Junction Temperature *
0
-55 to 150
Tj
C
0
Note: * This is a new product – the max junction temperature is expected to go up to 175 C in future.
MOSFET Characteristics (Tj = 250C unless indicated)
PARAMETER
SYMBOL
Drain-Source Breakdown Voltage
ID = 100uA
Gate Threshold Voltage
VGS =VDS, ID = 1mA
Zero Gate Voltage Drain Current
MIN
TYP
MAX
UNIT
V(BR)DSS
1200
-
-
V
VGS(TH)
1.7
2.2
-
V
-
1
10
100
250
µA
-
-
250
nA
100
160
110
220
mΩ
IDSS
0
VGS= 0V, VDS = 1200V, Tj = 25 C
0
VGS= 0V, VDS = 1200V, Tj = 150 C
Gate-Source Leakage Current
VGS = 20V, VDS = 0V
IGSS
On-State Resistance
RDS(ON)
0
VGS =20V, ID = 20A, Tj = 25 C
-
0
VGS =20V, ID = 20A, Tj = 150 C
Transconductance
0
VDS = 20V, IDS = 20A, Tj = 25 C
gfs
-
9.8
8.5
-
S
0
VDS = 20V, IDS = 20A, Tj = 125 C
Input Capacitance
VDD =800V, VGS =0V, f=1MHz
Ciss
-
950
-
pF
Output Capacitance
VDD =800V, VGS =0V, f=1MHz
Coss
-
80
-
pF
Reverse Transfer Capacitance
VDD =800V, VGS =0V, f=1MHz
Crss
-
6.5
-
pF
Internal Gate Resistance
RG
-
4.6
-
Ω
Thermal Resistance, Junction to Case
RTHJC
-
-
1.25
K/W
© 2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]
SENSITRON
______
SEMICONDUCTOR
SHD626532
DATASHEET 5312, REV -
Intrinsic Diode Characteristics (Tj = 250C unless indicated)
PARAMETER
SYMBOL
Forward Voltage
VGS=-5V, IF=10A
MIN
TYP
MAX
UNIT
VSD
-
3.3
-
V
Reverse Recovery Time
VGS=-5V, IF=20A, VR=800V
di/dt=100A/us
tRR
-
40
-
ns
Reverse Recovery Charge
VGS=-5V, IF=20A, VR=800V
di/dt=100A/us
QRR
-
165
-
nC
Peak Reverse Recovery
Current
VGS=-5V, IF=20A, VR=800V
di/dt=100A/us
IRRM
-
6.4
-
A
Mechanical Dimensions (inches/mm):
TO-257
1. Drain
2. Source
3. Gate
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datasheet(s).
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© 2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]