SHD625061 SHD625061D SHD625061N SHD625061P SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4141, REV. D HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION/FEATURES: 600V, 40A, POWER SILICON CARBIDE RECTIFIER AVAILABLE SCREENED TO ANY REQUIRED LEVEL • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES • NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR • High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at high frequency; use part number prefix SHDG • Ceramic Seal Option – For ceramic seals use part number prefix SHDC MAXIMUM RATINGS ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MAX. UNITS PIV 600 Volts MAXIMUM DC OUTPUT CURRENT (With TC = 65 OC, for part numbers with P and N suffixes) IO 40 Amps MAXIMUM DC OUTPUT CURRENT (With TC = 65 OC, for part numbers with Single and D suffixes) IO 20 Amps IFRM 80 Amps Pd 80 W RθJC 1.25 °C/W Top, Tstg -55 to +200 °C PEAK INVERSE VOLTAGE MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG (t = 8.3ms, Sine) per leg, TC = 25 OC MAXIMUM POWER DISSIPATION, TC = 25 OC MAXIMUM THERMAL RESISTANCE, Junction to Case PER LEG MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE* * Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C. ELECTRICAL CHARACTERISTICS CHARACTERISTIC TYP MAX. UNITS MAXIMUM FORWARD VOLTAGE DROP, Pulsed (If = 12 A PER LEG) Vf TJ = 25 °C TJ =150°C 1.35 1.60 1.45 1.70 Volts MAXIMUM FORWARD VOLTAGE DROP, Pulsed (If = 20 A PER LEG) Vf TJ = 25 °C TJ = 150 °C 1.65 2.05 1.80 2.20 Volts MAXIMUM REVERSE CURRENT (Ir @ 600V PIV PER LEG) TJ = 25 °C TJ = 150 °C 0.08 0.15 0.30 1.00 mA JUNCTION CAPACITANCE (Vr =5V) per leg 500 700 pF 70 N/A nC CT TOTAL CAPACITIVE CHARGE QC per leg (VR=600V IF=20A di/dt=500A/μs TJ=25°C) This is design information only • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - [email protected] • • © 2003 Sensitron Semiconductor • SHD625061 SHD625061D SHD625061N SHD625061P SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4141, REV. D MECHANICAL DIMENSIONS .149 .139 (3.78 Dia. 3.53) .800 (20.32 .790 20.07) .685 (17.40 .665 16.89) 1.235 (31.37 1.195 30.35) .260 .249 .050 .040 .545 (13.84 .535 13.60) 1 2 (6.60 6.32) (1.27 1.02) .545 (13.84 .535 13.58) 3 TO-254 .045 (1.14 .035 0.89) 3 Places .150(3.81) BSC .150(3.81) BSC 2 Places PINOUT TABLE TYPE SINGLE RECTIFIER DUAL RECTIFIER/COMMON CATHODE (P) DUAL RECTIFIER/COMMON ANODE (N) DUAL RECTIFIER/DOUBLER (D) PIN 1 CATHODE ANODE 1 CATHODE 1 ANODE PIN 2 ANODE COMMON CATHODE COMMON ANODE ANODE/ CATHODE PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE SCHEMATIC 1 2 SINGLE 3 1 2 3 COMMON CATHODE 1 2 3 COMMON ANODE 3 2 DOUBLER 1 Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche capabilities of the device are limited. Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially damaging conditions in their applications. • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - [email protected] • • © 2003 Sensitron Semiconductor • SENSITRON SEMICONDUCTOR SHD625061 SHD625061D SHD625061N SHD625061P TECHNICAL DATA DATA SHEET 4141, REV. D Typical Reverse Current Characteristics Typical Forward Voltage Characteristics DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-mail Address - [email protected] • • © 2003 Sensitron Semiconductor •