R1LV16 R1LV5256 R1R RM L V 04 16 E G SB - 4 S 2 #A A 0 RENESAS Memory Chip configuration of LPSRAM L Single chip W Two chips Specification 0 Environment Operation Voltage V 3V P 5V Standard A Lead free C Lead free(FBGA) Packing Memory density 04 4Mb 08 8Mb 16 16Mb Tray C Tube H Embossed Tape (TSOP, SOP) K Embossed Tape (FBGA, sTSOP) Operating Temperature Bit configuration 2 08 x8 16 or 14 x16 or x8/x16 (Byte# control) Chip generation A Industrial Grade Access time Package type SA sTSOP (4Mb) / TSOPI (8Mb/16Mb) SB TSOPII SD μTSOPII SP SOP BG FBGA 5 55ns 4 45ns Example shown here : Part number Stand-by current / Data retention current S Standard RMLV0416EGSB-4S2#AA0 Low Power SRAM(0.11um) (4Mbit, 8Mbit, 16Mbit) ©2014. Renesas Electronics Corporation, all rights reserved. -40 to 85 deg C RM R1LV5256 R1R R1 L V 16 16 R SD - 7 S I #B0 Packing, Environmental RENESAS Memory Chip configuration of LPSRAM L Single chip W Two chips Packing Environmental #B0 Tray or Tube Pb free #S0 Embossed Tape Pb free Operation Voltage V 3V P 5V Operating Temperature Memory density 01 1Mb 02 2Mb 04 4Mb 08 8Mb 16 16Mb 32 32Mb 64 64Mb Package type Bit configuration 08 x8 16 x16 or x8/x16 (Byte# control) SA sTSOP (1Mb/2Mb/4Mb) TSOPI (8Mb/16Mb/32Mb/64Mb) SB TSOPII SD μTSOPII SF TSOPI (1Mb) SP SOP(4Mb) SN SOP(1Mb) BG FBGA Chip generation R 0 to 70 deg C I -40 to 85 deg C Stand by current / Access time Data retention current 7 70 ns L Standard 5 55ns S Low power version 4 45ns Example shown here: Part number R1LV1616RSD-7SI#B0 Low Power SRAM(0.15um) (1Mbit, 2Mbit, 4Mbit, 8Mbit, 16Mbit, 32Mbit, 64Mbit) ©2014. Renesas Electronics Corporation, all rights reserved. RM R1LV16 R1R R1 L V 5256 E SP - 7 S I #B0 Packing, Environmental RENESAS Memory Chip configuration of LPSRAM L Single chip Packing Environmental #B0 Tray or Tube Pb free #S0 Embossed Tape Pb free Operating Temperature Operation Voltage R 0 to 70 deg C V 3V I -40 to 85 deg C P 5V Stand by current / Data retention current Memory density & bit configuration density 5256 256Kb bit configuration L Standard S Low power version x8 Access time 7 70 ns 5 55ns Chip generation Package type Low Power SRAM (256Kbit) ©2014. Renesas Electronics Corporation, all rights reserved. SA TSOPI (13.4mm x 8mm) SP SOP Example shown here : Part number R1LV5256ESP-7SI#B0 RM R1LV16 R1LV5256 R1 R W 04 16 D SB - 2 P I #B0 Packing, Environmental RENESAS Memory Fast SRAM Packing Environmental #B0 Tube(SOJ) Pb free #D0 Tray(TSOP) Pb free #S0 Embossed Tape Pb free Operating Temperature Operation Voltage W 3.3V R 0 to 70 deg C P 5V I -40 to 85 deg C Memory density 04 Stand by current / Data retention current 4Mb Bit configuration 08 x8 16 x16 P Standard L Low power version S Super Low power version Access time 2 12 ns 0 10 ns Package type Chip generation 4Mbit Fast SRAM GE SOJ SB TSOP II Example shown here: Part number R1RW0416DSB-2PI#B0 ©2014. Renesas Electronics Corporation, all rights reserved.