To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1398 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING ★ ORDERING INFORMATION DESCRIPTION The 2SK1398 is N-channel MOS Field Effect Transistor designed for a high-speed switching device in digital circuits. The 2SK1398 is driven by a 2.5-V power source, it is PART NUMBER PACKAGE 2SK1398 SST suitable for applications including headphone stereos which need power saving. FEATURES • Directly driven by ICs having a 3-V power supply. • Not necessary to consider driving current because of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor. • Can be used complementary with the 2SJ184. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS= 0 V) VDSS 50 V Gate to Source Voltage (VDS= 0 V) VGSS ±7.0 V Drain Current (DC) ID(DC) ±100 mA ID(pulse) ±200 mA Drain Current (pulse) Note Total Power Dissipation PT 250 mW Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Note PW ≤ 10 ms, Duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14772EJ2V0DS00 (2nd edition) (Previous No. TC-2342) Date Published March 2000 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1991, 2000 2SK1398 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS ★ SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT 10 µA ±5.0 µA 1.5 V Drain Cut-off Current I DSS VDS = 50 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 V VGS(off) VDS = 3.0 V, ID = 1.0 µA 0.9 1.2 | yfs | VDS = 3.0 V, ID = 10 mA 20 38 RDS(on)1 VGS = 2.5 V, ID = 10 mA 22 40 Ω RDS(on)2 VGS = 4.0 V, ID = 10 mA 14 20 Ω Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance mS Input Capacitance Ciss VDS = 3.0 V 8 pF Output Capacitance Coss VGS = 0 V 7 pF Reverse Transfer Capacitance Crss f = 1 MHz 3 pF Turn-on Delay Time t d(on) VDD = 3.0 V 15 ns tr ID = 20 mA 100 ns VGS(on) = 3.0 V 30 ns RG = 10 Ω, RL = 150 Ω 35 ns Rise Time Turn-off Delay Time td(off) Fall Time tf TEST CIRCUIT SWITCHING TIME D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 90 % VDD 90 % ID 90 % ID VGS 0 I D Wave Form τ τ = 1µ s Duty Cycle ≤ 1 % 2 VGS(on) 10 % 10 % 0 10 % tr td(on) ton td(off) tf toff Data Sheet D14772EJ2V0DS00 2SK1398 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - mW dT - Derating Factor - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 20 40 60 80 300 250 200 150 100 50 0 100 120 140 160 30 TC - Case Temperature - ˚C 60 90 120 150 180 TA - Ambient Temperature - ˚C FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - mA Pulsed 80 VGS = 4.5 V 60 VGS = 4.0 V VGS = 2.5 V 40 20 0 1.0 0.5 10 TA = 150 ˚C 75 ˚C 25 ˚C −25 ˚C 1 0.1 2.0 1.5 VDS = 3.0 V 0.01 VDS - Drain to Source Voltage - V 0 1 2 3 4 5 6 7 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 3.0 V ID = 1.0 µA 1.5 1.0 1000 | yfs | - Forward Transfer Admittance - mS 2.0 VGS(off) - Gate to Source Cut-off Voltage - V ★ ID - Drain Current - mA 100 Pulsed 100 VDS = 5.0 V f = 1 kHz 100 10 1 10 100 200 ID - Drain Current - mA 0.5 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet D14772EJ2V0DS00 3 RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 20 ★ ID = 100 mA ID = 10 mA 10 0 1 3 2 4 5 6 7 8 9 RDS(on) - Drain to Source On-state Resistance - Ω 2SK1398 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulsed VGS = 2.5 V VGS = 4.0 V 10 1 0.1 1 10 100 ID - Drain Current - mA 10 25 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE VGS = 2.5 V ID = 5.0 mA 20 15 10 0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω VGS - Gate to Source Voltage - V 100 50 150 30 VGS = 4.0 V ID = 5.0 mA 25 20 15 0 Tch - Channel Temperature - ˚C Ciss Coss Crss td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS 1 000 VGS = 0 V f = 1 MHz 10 tr 100 tf td(off) td(on) 10 1 1 10 100 1 1 10 VDD = 3.0 V VGS = 3.0 V RGS = 10 Ω 1000 100 ID - Drain Current - mA VDS - Drain to Source Voltage - V 4 150 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 100 50 Data Sheet D14772EJ2V0DS00 2SK1398 ISD - Source to Drain Current - mA SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed VGS = 0 V 10 1 0.1 0.5 0.6 0.7 0.8 0.9 1.0 VSD - Source to Drain Voltage - V Data Sheet D14772EJ2V0DS00 5 2SK1398 PACKAGE DRAWING (Unit: mm) SST 2.0±0.2 3.0±0.2 4.0±0.2 2 3 1.0 TYP. 1 0.6 TYP. 0.50 TYP. Drain 0.42 TYP. 12.5 MIN. 0.45 TYP. EQUIVALENT CIRCUIT Body Diode Gate Gate Protection Source Diode Marking : G25 1.27 TYP. 1 Remark 2 3 1.35 TYP. 1.27 TYP. 1. Source 2. Drain 3. Gate The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D14772EJ2V0DS00 2SK1398 [MEMO] Data Sheet D14772EJ2V0DS00 7 2SK1398 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8