2SK1398 DS - Renesas Electronics

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1398
N-CHANNEL MOS FET
FOR HIGH SPEED SWITCHING
★
ORDERING INFORMATION
DESCRIPTION
The 2SK1398 is N-channel MOS Field Effect Transistor
designed for a high-speed switching device in digital circuits.
The 2SK1398 is driven by a 2.5-V power source, it is
PART NUMBER
PACKAGE
2SK1398
SST
suitable for applications including headphone stereos
which need power saving.
FEATURES
• Directly driven by ICs having a 3-V power supply.
• Not necessary to consider driving current because of its high input impedance.
• Possible to reduce the number of parts by omitting the bias resistor.
• Can be used complementary with the 2SJ184.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS= 0 V)
VDSS
50
V
Gate to Source Voltage (VDS= 0 V)
VGSS
±7.0
V
Drain Current (DC)
ID(DC)
±100
mA
ID(pulse)
±200
mA
Drain Current (pulse)
Note
Total Power Dissipation
PT
250
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Note PW ≤ 10 ms, Duty cycle ≤ 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14772EJ2V0DS00 (2nd edition)
(Previous No. TC-2342)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
1991, 2000
2SK1398
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
★
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
10
µA
±5.0
µA
1.5
V
Drain Cut-off Current
I DSS
VDS = 50 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±7.0 V, VDS = 0 V
VGS(off)
VDS = 3.0 V, ID = 1.0 µA
0.9
1.2
| yfs |
VDS = 3.0 V, ID = 10 mA
20
38
RDS(on)1
VGS = 2.5 V, ID = 10 mA
22
40
Ω
RDS(on)2
VGS = 4.0 V, ID = 10 mA
14
20
Ω
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
mS
Input Capacitance
Ciss
VDS = 3.0 V
8
pF
Output Capacitance
Coss
VGS = 0 V
7
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
3
pF
Turn-on Delay Time
t d(on)
VDD = 3.0 V
15
ns
tr
ID = 20 mA
100
ns
VGS(on) = 3.0 V
30
ns
RG = 10 Ω, RL = 150 Ω
35
ns
Rise Time
Turn-off Delay Time
td(off)
Fall Time
tf
TEST CIRCUIT SWITCHING TIME
D.U.T.
RL
RG
RG = 10 Ω
PG.
VGS
VGS
Wave Form
0
90 %
VDD
90 %
ID
90 %
ID
VGS
0
I
D
Wave Form
τ
τ = 1µ s
Duty Cycle ≤ 1 %
2
VGS(on)
10 %
10 %
0 10 %
tr
td(on)
ton
td(off)
tf
toff
Data Sheet D14772EJ2V0DS00
2SK1398
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PT - Total Power Dissipation - mW
dT - Derating Factor - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
20
40
60
80
300
250
200
150
100
50
0
100 120 140 160
30
TC - Case Temperature - ˚C
60
90
120 150
180
TA - Ambient Temperature - ˚C
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ID - Drain Current - mA
Pulsed
80
VGS = 4.5 V
60
VGS = 4.0 V
VGS = 2.5 V
40
20
0
1.0
0.5
10
TA = 150 ˚C
75 ˚C
25 ˚C
−25 ˚C
1
0.1
2.0
1.5
VDS = 3.0 V
0.01
VDS - Drain to Source Voltage - V
0
1
2
3
4
5
6
7
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VDS = 3.0 V
ID = 1.0 µA
1.5
1.0
1000
| yfs | - Forward Transfer Admittance - mS
2.0
VGS(off) - Gate to Source Cut-off Voltage - V
★
ID - Drain Current - mA
100
Pulsed
100
VDS = 5.0 V
f = 1 kHz
100
10
1
10
100 200
ID - Drain Current - mA
0.5
0
50
100
150
Tch - Channel Temperature - ˚C
Data Sheet D14772EJ2V0DS00
3
RDS(on) - Drain to Source On-state Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
20
★
ID = 100 mA
ID = 10 mA
10
0
1
3
2
4
5
6
7
8
9
RDS(on) - Drain to Source On-state Resistance - Ω
2SK1398
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
100
Pulsed
VGS = 2.5 V
VGS = 4.0 V
10
1
0.1
1
10
100
ID - Drain Current - mA
10
25
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
VGS = 2.5 V
ID = 5.0 mA
20
15
10
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - Ω
RDS(on) - Drain to Source On-state Resistance - Ω
VGS - Gate to Source Voltage - V
100
50
150
30
VGS = 4.0 V
ID = 5.0 mA
25
20
15
0
Tch - Channel Temperature - ˚C
Ciss
Coss
Crss
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS
1 000
VGS = 0 V
f = 1 MHz
10
tr
100
tf
td(off)
td(on)
10
1
1
10
100
1
1
10
VDD = 3.0 V
VGS = 3.0 V
RGS = 10 Ω
1000
100
ID - Drain Current - mA
VDS - Drain to Source Voltage - V
4
150
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
100
50
Data Sheet D14772EJ2V0DS00
2SK1398
ISD - Source to Drain Current - mA
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
VGS = 0 V
10
1
0.1
0.5
0.6
0.7
0.8
0.9
1.0
VSD - Source to Drain Voltage - V
Data Sheet D14772EJ2V0DS00
5
2SK1398
PACKAGE DRAWING (Unit: mm)
SST
2.0±0.2
3.0±0.2
4.0±0.2
2
3
1.0
TYP.
1
0.6 TYP.
0.50 TYP.
Drain
0.42 TYP.
12.5 MIN.
0.45 TYP.
EQUIVALENT CIRCUIT
Body
Diode
Gate
Gate
Protection
Source
Diode
Marking : G25
1.27 TYP.
1
Remark
2
3
1.35
TYP.
1.27 TYP.
1. Source
2. Drain
3. Gate
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
6
Data Sheet D14772EJ2V0DS00
2SK1398
[MEMO]
Data Sheet D14772EJ2V0DS00
7
2SK1398
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8