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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. “Standard”: 8. 9. 10. 11. 12. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA622TT N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION 2.0 ±0.2 • 4.0 V drive available • Low on-state resistance RDS(on)1 = 82 mΩ MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 120 mΩ MAX. (VGS = 4.5 V, ID = 1.0 A) RDS(on)3 = 139 mΩ MAX. (VGS = 4.0 V, ID = 1.0 A) 5 4 1 2 3 1.6 6 0 to 0.05 0.65 S +0.1 0.15 −0.05 0.65 2.1 ±0.1 FEATURES PACKAGE DRAWING (Unit: mm) 0.25 ±0.1 The µPA622TT is a switching device which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0.8 MAX. ORDERING INFORMATION PART NUMBER PACKAGE µPA622TT-E1-A 6 pin WSOF (1620) 1, 2, 5, 6: Drain 3 : Gate 4 : Source 0.05 S 0.4 ±0.1 µPA622TT-E2-A Remark "-A" indicates Pb-free (This product does not contain Pb in external electrode and other parts.). "-E1" or "-E2" indicates the unit orientation. (8 mm embossed carrier tape, 3000 pcs/reel) +0.1 Marking: WC 0.2 −0.05 0.1 M S ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 VGSS ±20 Gate to Source Voltage (VDS = 0 V) Note1 Drain Current (DC) ID(DC) ±3.0 Note2 Drain Current (pulse) ID(pulse) ±12 0.2 Total Power Dissipation PT1 Note1 Total Power Dissipation PT2 1.3 150 Channel Temperature Tch –55 to +150 Storage Temperature Tstg 2 Notes 1. Mounted on FR-4 board of 5000 mm x 1.1 mm, t ≤ 5 sec. 2. PW ≤ 10 µs, Duty Cycle ≤ 1% V V A A W W °C °C EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16113EJ2V0DS00 (2nd edition) Date Published May 2005 NS CP(K) Printed in Japan The mark shows major revised points. 2002 µPA622TT ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±16 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 1.5 A 0.5 2.1 RDS(on)1 VGS = 10 V, ID = 1.5 A 65 82 mΩ RDS(on)2 VGS = 4.5 V, ID = 1.0 A 90 120 mΩ RDS(on)3 VGS = 4.0 V, ID = 1.0 A 104 139 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 155 pF Output Capacitance Coss VGS = 0 V 45 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 27 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 1.5 A 10 ns tr VGS = 10 V 28 ns td(off) RG = 10 Ω 75 ns 50 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 24 V 3.8 nC Gate to Source Charge QGS VGS = 10 V 0.7 nC QGD ID = 3.0 A 1.3 nC IF = 3.0 A, VGS = 0 V 0.90 V Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) Note Pulsed TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 0 10% 10% tr td(off) Wave Form td(on) ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA tf toff Data Sheet G16113EJ2V0DS µPA622TT TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.6 1.4 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 1.2 1 0.8 0.6 0.4 0.2 0 Mounted on FR-4 board of 2 5000 m m x 1.1 m m , t ≤ 5 sec. 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA R DS(on) Limited (V GS = 10 V) ID(pulse) 10 PW = 1 ms 1 ID(DC) 10 ms 0.1 0.01 100 ms Single pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm 0.1 1 5s 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A 100 100 10 Single pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16113EJ2V0DS 3 µPA622TT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 12 10 VDS = 10 V P u ls e d Pulsed V GS = 10 V 1 ID - Drain Current - A ID - Drain Current - A 10 8 6 4 4.5 V 4.0 V 2 0 T A = 1 2 5 °C 7 5 °C 2 5 °C − 2 5 °C 0 .1 0 .0 1 0 .0 0 1 0 .0 0 0 1 0 0.2 0.4 0.6 0.8 1 1.2 1 1 .5 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V V DS = 10 V ID = 1.0 m A 2.2 2 1.8 1.6 1.4 50 100 150 10 Pulsed V GS = 4.0 V, ID = 1.0 A V GS = 4.5 V, ID = 1.0 A 100 50 V G S = 10 V, I D = 1.5 A 0 50 100 150 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 200 0 Tch - Channel Temperature - °C 4 4 1 T A = −25°C 25°C 75°C 125°C 0.1 0.01 0.01 0.1 1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE -50 3 .5 V D S = 10 V Pulsed Tch - Channel Temperature - °C 150 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 2.4 0 2 .5 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -50 2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 Pulsed 150 100 ID = 1.5 A 50 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet G16113EJ2V0DS 20 200 V GS = 10 V Pulsed 150 T A = 125°C 100 75°C 25°C − 25°C 50 0 0.01 0.1 1 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 V GS = 4.5 V Pulsed 150 T A = 125°C 75°C 100 25°C − 25°C 50 0 0.01 0.1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT SWITCHING CHARACTERISTICS 1000 200 V G S = 4.0 V Pulsed 150 T A = 125°C 75°C 25°C 100 − 25°C 50 0 0.01 VDD = 15 V VGS = 10 V R G = 10 Ω 100 t d ( o f f) tf tr 10 td (o n ) 1 0.1 1 10 0 .1 100 1 10 ID - Drain Current - A ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 1000 P ulse d VGS = 0 V f = 1 .0 M H z C is s 100 C oss C rs s IF - Diode Forward Current - A Ciss, Coss, Crss - Capacitance - pF 1 ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µPA622TT 10 VGS = 0 V 1 0.1 0 .0 1 10 0 .4 0 .1 1 10 100 VDS - Drain to Source Voltage - V Data Sheet G16113EJ2V0DS 0 .6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V 5 µPA622TT DYNAMIC INPUT/OUTPUT CHARACTERISTICS 14 VGS - Gate to Source Voltage - V I D = 3 .0 A 12 V D D = 6 .0 V 15 V 24 V 10 8 6 4 2 0 0 1 2 3 4 QG - Gate Charge - nC 6 Data Sheet G16113EJ2V0DS µPA622TT • The information in this document is current as of May, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1