µPA622TT - Renesas Electronics

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April 1st, 2010
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA622TT
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
2.0 ±0.2
• 4.0 V drive available
• Low on-state resistance
RDS(on)1 = 82 mΩ MAX. (VGS = 10 V, ID = 1.5 A)
RDS(on)2 = 120 mΩ MAX. (VGS = 4.5 V, ID = 1.0 A)
RDS(on)3 = 139 mΩ MAX. (VGS = 4.0 V, ID = 1.0 A)
5
4
1
2
3
1.6
6
0 to 0.05
0.65
S
+0.1
0.15 −0.05
0.65
2.1 ±0.1
FEATURES
PACKAGE DRAWING (Unit: mm)
0.25 ±0.1
The µPA622TT is a switching device which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
0.8 MAX.
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA622TT-E1-A
6 pin WSOF (1620)
1, 2, 5, 6: Drain
3
: Gate
4
: Source
0.05 S
0.4 ±0.1
µPA622TT-E2-A
Remark "-A" indicates Pb-free (This product does not contain Pb
in external electrode and other parts.).
"-E1" or "-E2" indicates the unit orientation.
(8 mm embossed carrier tape, 3000 pcs/reel)
+0.1
Marking: WC
0.2 −0.05
0.1 M S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
VGSS
±20
Gate to Source Voltage (VDS = 0 V)
Note1
Drain Current (DC)
ID(DC)
±3.0
Note2
Drain Current (pulse)
ID(pulse)
±12
0.2
Total Power Dissipation
PT1
Note1
Total Power Dissipation
PT2
1.3
150
Channel Temperature
Tch
–55 to +150
Storage Temperature
Tstg
2
Notes 1. Mounted on FR-4 board of 5000 mm x 1.1 mm, t ≤ 5 sec.
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
V
V
A
A
W
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16113EJ2V0DS00 (2nd edition)
Date Published May 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
µPA622TT
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
Gate Leakage Current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
VGS(off)
VDS = 10 V, ID = 1.0 mA
1.5
2.0
2.5
V
| yfs |
VDS = 10 V, ID = 1.5 A
0.5
2.1
RDS(on)1
VGS = 10 V, ID = 1.5 A
65
82
mΩ
RDS(on)2
VGS = 4.5 V, ID = 1.0 A
90
120
mΩ
RDS(on)3
VGS = 4.0 V, ID = 1.0 A
104
139
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
S
Input Capacitance
Ciss
VDS = 10 V
155
pF
Output Capacitance
Coss
VGS = 0 V
45
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
27
pF
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 1.5 A
10
ns
tr
VGS = 10 V
28
ns
td(off)
RG = 10 Ω
75
ns
50
ns
Rise Time
Turn-off Delay Time
Fall Time
tf
Total Gate Charge
QG
VDD = 24 V
3.8
nC
Gate to Source Charge
QGS
VGS = 10 V
0.7
nC
QGD
ID = 3.0 A
1.3
nC
IF = 3.0 A, VGS = 0 V
0.90
V
Gate to Drain Charge
Body Diode Forward Voltage
Note
VF(S-D)
Note Pulsed
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
VGS
RL
VGS
RG
PG.
Wave Form
VDD
0
VGS
10%
PG.
90%
τ
τ = 1 µs
Duty Cycle ≤ 1%
2
90%
VDS
VDS
0
10%
10%
tr
td(off)
Wave Form
td(on)
ton
RL
50 Ω
VDD
90%
VDS
VGS
0
IG = 2 mA
tf
toff
Data Sheet G16113EJ2V0DS
µPA622TT
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.6
1.4
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
1.2
1
0.8
0.6
0.4
0.2
0
Mounted on FR-4 board of
2
5000 m m x 1.1 m m , t ≤ 5 sec.
0
0
25
50
75
100
125
150
175
0
TA - Ambient Temperature - °C
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
R DS(on) Limited
(V GS = 10 V)
ID(pulse)
10
PW = 1 ms
1
ID(DC)
10 ms
0.1
0.01
100 ms
Single pulse
Mounted on FR-4 board of
2
5000 mm x 1.1 mm
0.1
1
5s
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
100
100
10
Single pulse
Mounted on FR-4 board of
2
5000 mm x 1.1 mm
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16113EJ2V0DS
3
µPA622TT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
12
10
VDS = 10 V
P u ls e d
Pulsed
V GS = 10 V
1
ID - Drain Current - A
ID - Drain Current - A
10
8
6
4
4.5 V
4.0 V
2
0
T A = 1 2 5 °C
7 5 °C
2 5 °C
− 2 5 °C
0 .1
0 .0 1
0 .0 0 1
0 .0 0 0 1
0
0.2
0.4
0.6
0.8
1
1.2
1
1 .5
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
V DS = 10 V
ID = 1.0 m A
2.2
2
1.8
1.6
1.4
50
100
150
10
Pulsed
V GS = 4.0 V, ID = 1.0 A
V GS = 4.5 V, ID = 1.0 A
100
50
V G S = 10 V, I D = 1.5 A
0
50
100
150
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
200
0
Tch - Channel Temperature - °C
4
4
1
T A = −25°C
25°C
75°C
125°C
0.1
0.01
0.01
0.1
1
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
-50
3 .5
V D S = 10 V
Pulsed
Tch - Channel Temperature - °C
150
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
2.4
0
2 .5
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-50
2
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
Pulsed
150
100
ID = 1.5 A
50
0
0
5
10
15
VGS - Gate to Source Voltage - V
Data Sheet G16113EJ2V0DS
20
200
V GS = 10 V
Pulsed
150
T A = 125°C
100
75°C
25°C
− 25°C
50
0
0.01
0.1
1
10
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
V GS = 4.5 V
Pulsed
150
T A = 125°C
75°C
100
25°C
− 25°C
50
0
0.01
0.1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
SWITCHING CHARACTERISTICS
1000
200
V G S = 4.0 V
Pulsed
150
T A = 125°C
75°C
25°C
100
− 25°C
50
0
0.01
VDD = 15 V
VGS = 10 V
R G = 10 Ω
100
t d ( o f f)
tf
tr
10
td (o n )
1
0.1
1
10
0 .1
100
1
10
ID - Drain Current - A
ID - Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
1000
P ulse d
VGS = 0 V
f = 1 .0 M H z
C is s
100
C oss
C rs s
IF - Diode Forward Current - A
Ciss, Coss, Crss - Capacitance - pF
1
ID - Drain Current - A
td(on), tr, td(off), tf - Switching Time - ns
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
µPA622TT
10
VGS = 0 V
1
0.1
0 .0 1
10
0 .4
0 .1
1
10
100
VDS - Drain to Source Voltage - V
Data Sheet G16113EJ2V0DS
0 .6
0.8
1
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
5
µPA622TT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
14
VGS - Gate to Source Voltage - V
I D = 3 .0 A
12
V D D = 6 .0 V
15 V
24 V
10
8
6
4
2
0
0
1
2
3
4
QG - Gate Charge - nC
6
Data Sheet G16113EJ2V0DS
µPA622TT
• The information in this document is current as of May, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1