To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA677TB N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA677TB is a switching device which can be driven directly by a 2.5 V power source. The µPA677TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. +0.1 2.1 ±0.1 FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A) • Two MOS FET circuits in same size package as SC-70 1.25 ±0.1 0.2 -0 6 +0.1 0.15 -0.05 5 4 0 to 0.1 1 2 0.65 3 0.7 0.65 0.9 ±0.1 1.3 2.0 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE µPA677TB SC-88 (SSP) Marking: WA PIN CONNECTUON (Top View) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±12 V ID(DC) ±0.35 A ID(pulse) ±1.40 A PT 0.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation(2units) Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 Board of 2500 mm x 1.1 mm 2units total. 6 5 4 1: 2: 3: 4: 5: 6: 1 2 Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1 3 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD = ±200 V TYP. (C = 200 pF, R = 0 Ω, Single pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16598EJ1V0DS00 (1st edition) Date Published March 2003 NS CP(K) Printed in Japan 2003 µPA677TB ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20.0 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±12.0 V, VDS = 0 V ±10 µA VGS(off) VDS = 10.0 V, ID = 1.0 mA 0.5 1.0 1.5 V | yfs | VDS = 10.0 V, ID = 0.30 A 0.25 0.75 RDS(on)1 VGS = 4.5 V, ID = 0.30 A 0.38 0.57 Ω RDS(on)2 VGS = 4.0 V, ID = 0.30 A 0.41 0.60 Ω RDS(on)3 VGS = 2.5 V, ID = 0.15 A 0.60 0.88 Ω Gate Cut-off Voltage Note Forward Transfer Admittance Drain to Source On-state ResistanceNote S Input Capacitance Ciss VDS = 10.0 V 28 pF Output Capacitance Coss VGS = 0 V 11 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 7 pF Turn-on Delay Time td(on) VDD = 10.0 V, ID = 0.30 A 20 ns tr VGS = 4.0 V 51 ns td(off) RG = 10 Ω 94 ns 87 ns 0.84 V Rise Time Turn-off Delay Time Fall Time tf Body Diode Forward Voltage Note VF(S-D) IF = 0.35 A, VGS = 0 V Note Pulsed PW≤350 µs, Duty Cycle≤2% TEST CIRCUIT SWITCHING TIME VGS D.U.T. VGS RL RG PG. Wave Form 0 VGS 10% 90% VDS VDD 90% 90% VDS VDS VGS Wave Form 0 10% 0 td(on) τ tr ton 10% td(off) tf toff τ = 1 µs Duty Cycle ≤ 1% 2 Data Sheet G16598EJ1V0DS µPA677TB TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 0.24 100 0.2 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 80 60 40 20 Mounted on FR-4 Board of 2 2500 mm x 1.1 mm 2units total 0.16 0.12 0.08 0.04 0 0 0 25 50 75 100 125 150 175 0 25 TA - Ambient Temperature - °C 75 100 125 150 175 TA - Ambient Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1.4 10 V DS = 10 V Pulsed Pulsed 1.2 V GS = 4.5 V 4.0 V 2.5 V 1 1 ID - Drain Current - A ID - Drain Current - A 50 0.8 0.6 0.4 0.1 T A = 125°C 75°C 25°C −25°C 0.01 0.001 0.2 0 0.0001 0 0.4 0.8 1.2 1.6 0 0.5 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2 2.5 3 10 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 1.5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1.4 V DS = 10 V ID = 1.0 mA 1.2 1 0.8 0.6 0.4 - 50 1 VGS - Gate to Source Voltage - V 0 50 100 150 Tch - Channel Temperature - °C V DS = 10 V Pulsed 1 T A= −25°C 25°C 75°C 125°C 0.1 0.01 0.001 0.01 0.1 1 10 ID - Drain Current - A Data Sheet G16598EJ1V0DS 3 µPA677TB 1.2 Pulsed 1 VGS = 2.5 V, ID = 0.15 A 0.8 0.6 0.4 V GS = 4.0 V, ID = 0.30 A V GS = 4.5 V, ID = 0.30 A 0.2 0 - 50 0 50 100 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.2 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = 0.30 A Pulsed 1 0.8 0.6 0.4 0.2 0 0 2 Tch - Channel Temperature - °C 1.2 V GS = 4.5 V Pulsed 1 0.6 T A = 125°C 75°C 25°C −25°C 0.4 0.2 0 0.01 0.1 1 10 1 T A = 125°C 75°C 25°C −25°C 0.8 0.6 0.4 0.2 0 0.01 0.1 100 V GS = 2.5 V Pulsed Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - Ω 1 10 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE T A = 125°C 75°C 0.8 0.6 25°C −25°C 0.2 VGS = 0 V f = 1 .0 M H z C is s 10 C oss C rs s 1 0.1 1 10 ID - Drain Current - A 4 12 ID - Drain Current - A 1.2 0 0.01 10 V GS = 4.0 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.4 8 1.2 ID - Drain Current - A 1 6 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.8 4 VGS - Gate to Source Voltage - V 0 .1 1 10 VDS - Drain to Source Voltage - V Data Sheet G16598EJ1V0DS 100 µPA677TB SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 V DD = 10 V V G S = 4 .0 V R G = 10 Ω VGS = 0 V P u ls e d IF - Diode Forward Current - A td(on), tr, td(off), tf - Switching Time - ns 1000 t d (o ff) 100 tf tr 1 0 .1 0 .0 1 t d (o n ) 10 0 .0 1 0 .0 0 1 0 .1 1 10 ID - Drain Current - A 0 .4 0 .6 0 .8 1 1 .2 1 .4 VF(S-D) - Source to Drain Voltage - V Data Sheet G16598EJ1V0DS 5 µPA677TB • The information in this document is current as of February, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1