RECTRON SEMICONDUCTOR BAW56 TECHNICAL SPECIFICATION SURFACE MOUNT, DUAL 1N4148 COMMON ANODE DIODE SOT-23 Absolute Maximum Ratings (Ta=25°C) Items Symbol Ratings Unit Reverse Voltage VRRM 85 V Reverse trr 4 ns Recovery Time Forward Voltage VF 1.0 V @ If = 50 mA Forward Current IF 215 mA Junction Temp. Tj -55 to 150 °C Storage Temp. Tstg -55 to 150 °C (1) (3) Mechanical Data Items Materials Package SOT-23 Lead Frame 42 Alloy Lead Finish Solder Plating Bond Wire Au Mold Resin Epoxy Chip Silicon (2) 1. CATHODE 2. CATHODE 3. ANODE (UNITS: mm) Electrical Characteristics per Diode (Ta=25°C) Ratings Reverse Breakdown Voltage IR= 100uA Symbol VBR Ratings 75 Unit V Repetitive Peak Reverse Voltage VRRM 85 V Repetitive Peak Forward Current IFRM 450 mA 715 855 1000 1250 mV uA Forward Voltage IF= 1mA IF= 10mA IF= 50mA IF= 150mA Reverse Current VR= 75V VR= 25V (Tj= 150°C) VR= 75V (Tj= 150°C) Junction Capacitance VR = 0 V, f = 1MHz VF Cj 1.0 30 50 2.0 Reverse Recovery Time IF= IR= 10mA; RL= 100 ohms trr 4 ns RΘJA 500 °C/W Thermal Resistance (junction to ambient) RECTRON USA IR 1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com pF MAXIMUM RATINGS (at TA = 25oC unless otherwise noted) PARAMETER Continuous Forward Current SYMBOL IF Max CONDITIONS single diode loaded (note 1) 215 double diode loaded (note 1) 125 square wave,Tj=25 C prior to surge t=1us 4 t=1ms 1 t=1s 0.5 Tamb= 25 C 250 UNITS mA 0 Non-repelitive Peak Forward Current I FSM Total Power Dissipation PLOT Note: 1.Device mounted on an FR4 printed-circuit board. 0 Amps Amps Amps mW RATING AND CHARACTERISTIC CURVES ( BAW56 ) FIG. 1 - Maximum permissible continuous forward current as a function of ambient temperature FIG. 2 - Forward current as a function of forward voltage Tj=25 Tj=125 Tj=25 maximum values 225 IF (mA) 700 200 IF 600 (mA) 500 single diode loaded 150 400 double diode loaded 100 300 200 50 100 0 0 50 100 150 0 200 200 600 1000 VF(mV) 1400 FIG. 3 - Maximum permissible non-repetitive peak forward current as a function of pulse duration 100 IFSM (A) 10 1 0.1 10 1 100 1000 10000 FIG. 5 - Diode capacitance as a function of reverse voltage ; typical values f=1MHz; Tj=25 FIG. 4 - Reverse current as a function of junction temperature 100000 tp(uS) 2.5 Gd (pF) IR (nA) 2.0 VR=75V 10000 1.5 max 75V 1000 1.0 25V 100 0.5 typ 0 typ 10 0 100 0 Tj ( ) 200 5 10 15 25 20 VR(V)