BU941 Series

RoHS
BU941 Series RoHS
SEMICONDUCTOR
Nell High Power Products
NPN Power Darlington
High Voltage lgnition Coil Driver, 15A, 400V
FEATURES
C
NPN Darlington
Integrated antiparallel Collector-Emitter Diode
Very rugged bipolar technology
High operating junction temperature
B
C
C
B
E
C
APPLICATIONS
E
High ruggedness electronic ignitions
TO-3P(B)
(BU941B)
TO-220AB
( BU941A )
*Internal Schematic Diagram
C(2)
B(1)
PRODUCT SUMMARY
IC (A)
15
VCEO (V)
400
hFE
300 Min.
E(3)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VCES
Collector to Emitter Voltage
V BE =0
500
V CEO
Collector to Emitter Voltage
I B =0
400
V EBO
Emitter to Base Voltage
I C =0
5
IC
Collector Current
15
Collector Peak Current
30
Base Current
1.0
I BM
Base Peak Current
5.0
PD
Total power dissipation
I CM
UNIT
V
A
IB
TO-220AB
T C =25°C
TO-3P(B)
TJ
150
W
155
Operation junction temperature
-65 to 175
Storage temperature
-65 to 175
°C
T STG
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Page 1 of 5
RoHS
BU941 Series RoHS
SEMICONDUCTOR
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
PARAMETER
Min.
Typ.
Max.
TO-220AB
1.00
TO-3P(B)
0.97
Thermal resistance, junction to case
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
ICES
l CEO
I EBO
Collector cut-off current
V BE(sat) *
UNIT
V BE =0, V CE =500V
100
μA
V BE =0, V CE =500V, T j =125 °C
0.5
mA
I B =0, V CE =450V
100
μA
I B =0, V CE =450V, T j = 125°C
0.5
mA
I C =0, V EB =5V
20
mA
Min.
Collector cut-off current
Emitter cut-off current
V CEO(SUS) * Collector to emitter sustaining voltage
V CE(sat) *
Typ.
Max.
TEST CONDITIONS
PARAMETER
Collector to emitter saturation voltage
Base to emitter saturation voltage
I B =0, I C =100mA, L=10mH,
V clamp =400V
I C =8A, I B =100mA
1.6
I C =10A, I B =250mA
1.8
I C =12A, I B =300mA
2
2.2
I C =10A, I B =250mA
2.5
I C =12A, I B =300mA
2.7
DC current gain
I C = 5A, V CE = 10V
VF
Diode forward voltage
I F =10A
ts
Srorage time
300
2.5
V CC =24V, L=7mH, V clamp =400V
Functional test
Fall time
V
I C =8A, I B =100mA
h FE
tf
400
10
(see functional test circuit)
μS
0.5
*Pulsed: Pulse duration= 300μs, duty cycle= 1.5%.
ORDERING INFORMATION SCHEME
Darlington series
BU941 Type, 15A / 400V
Package type
A = TO-220AB
B = TO-3P(B)
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Page 2 of 5
A
15
V CC =12V, V clamp =300V, V BE =0,
R BE =47Ω, L=7mH, I C =7A, I B =70mA
BU941
V
A
RoHS
BU941 Series RoHS
SEMICONDUCTOR
Nell High Power Products
■ SUSTAINING VOLTAGE TEST CIRCUIT
■ SWITCHING TIME TEST CIRCUIT
VD
12V
V CC =16V
0V
7mH
t1
C
20ms
B
D.U.T.
R1
Vin
V clamp
R2
D.U.T.
V clamp
47Ω
E
■ FUNCTION TEST CIRCUIT
24V
16.6ms
lnput
Signal
L=7mH
0
VZ
Driver and
Current
Limiting
Circuit
11.6ms
Base
Current
0.22 μF
D.U.T.
l B =0.3A
0
100Ω
l C =8A
Collector
Current
0
V clamp
Collector
Emitter Voltage
0
0.2Ω
■ TYPICAL CHARACTERISTICS
Fig.1 DC Current gain
10 4
DC Current gain, h FE
V CE =2V
10 3
125°C
-40°C
10 2
T C =25°C
10 1
10 -1
10 0
Collector current, l C (A)
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Page 3 of 5
10 1
24V
RoHS
BU941 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.3 Collector-Emitter saturation voltage
Fig.2 DC Current gain
10 4
4.0
125°C
-40°C
10 2
T C =25°C
3.5
10A
2.5
8
2
1.5
6
4
1
10 1
10 -1
10 0
0.5
10 1
0
50
100
200
Base current, l B (mA)
Fig.4 Collector-Emitter saturation voltage
Fig.5 Base-Emitter saturation voltage
h FE =100
2.4
1.2
1.0
-40°C
0.8
T C =25°C
0.6
125°C
0.4
0.2
0
h FE =100
2.2
2.0
1.8
-40°C
1.6
T C =25°C
1.4
125°C
1.2
0
1
4
2
6
8 10
12
1
8 10
Collector current, l C (A)
Fig.6 Switching time
Fig.7 Safe operating area
10 2
l C MAX PULSED
Collector current, l C (A)
1
tf
PULSE OPERATION*
10 1
100μs
l C MAX CONT
10 0
1ms
10ms
10 -1
*For single
non-repelitive pulse
10 -1
1
2
4
6
8 10
10 -2
10 0
12
Collector current, l C (A)
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12
10μs
ts
10
6
4
2
Collector current, l C (mA)
Vclamp=300V, V CC =12V
h FE =100, R BE =47Ω,
L=7mH, T C =25°C
Switching time, μs
150
Collector current, l C (A)
1.4
Collector-Emitter saturation
voltage,V CE(SAT) (V)
Collector-Emitter saturation
voltage,V CE(SAT) (V)
10 3
Base-Emitter saturation
voltage,V BE(SAT) (V)
DC Current gain, h FE
V CE =10V
10 1
D.C.
10 2
Collector-Emitter voltage, V CE (V)
Page 4 of 5
10 3
RoHS
BU941 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
PIN
2
1
16.13 (0.635)
15.87 (0.625)
3
4.06 (0.160)
3.56 (0.140)
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
2
1
All dimensions in millimeters(inches)
3
1.8
4.7
4.8±0.2
1.5±0.1
Φ3.2 ± 0,1
2.0
4.0 max
20.0 min
19.9±0.3
1.30
15.6±0.4
9.6
5.0 ±0 . 2
TO-3P(B)
3.0
+0.2
1.05 -0.1
5.45±0.1
5.45±0.1
B
C
E
1
2
3
+0.2
0.65 -0.1
2.20
2
1
All dimensions in millimeters(inches)
3
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