RoHS BU941 Series RoHS SEMICONDUCTOR Nell High Power Products NPN Power Darlington High Voltage lgnition Coil Driver, 15A, 400V FEATURES C NPN Darlington Integrated antiparallel Collector-Emitter Diode Very rugged bipolar technology High operating junction temperature B C C B E C APPLICATIONS E High ruggedness electronic ignitions TO-3P(B) (BU941B) TO-220AB ( BU941A ) *Internal Schematic Diagram C(2) B(1) PRODUCT SUMMARY IC (A) 15 VCEO (V) 400 hFE 300 Min. E(3) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VCES Collector to Emitter Voltage V BE =0 500 V CEO Collector to Emitter Voltage I B =0 400 V EBO Emitter to Base Voltage I C =0 5 IC Collector Current 15 Collector Peak Current 30 Base Current 1.0 I BM Base Peak Current 5.0 PD Total power dissipation I CM UNIT V A IB TO-220AB T C =25°C TO-3P(B) TJ 150 W 155 Operation junction temperature -65 to 175 Storage temperature -65 to 175 °C T STG www.nellsemi.com Page 1 of 5 RoHS BU941 Series RoHS SEMICONDUCTOR Nell High Power Products THERMAL RESISTANCE SYMBOL Rth(j-c) PARAMETER Min. Typ. Max. TO-220AB 1.00 TO-3P(B) 0.97 Thermal resistance, junction to case UNIT ºC/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL ICES l CEO I EBO Collector cut-off current V BE(sat) * UNIT V BE =0, V CE =500V 100 μA V BE =0, V CE =500V, T j =125 °C 0.5 mA I B =0, V CE =450V 100 μA I B =0, V CE =450V, T j = 125°C 0.5 mA I C =0, V EB =5V 20 mA Min. Collector cut-off current Emitter cut-off current V CEO(SUS) * Collector to emitter sustaining voltage V CE(sat) * Typ. Max. TEST CONDITIONS PARAMETER Collector to emitter saturation voltage Base to emitter saturation voltage I B =0, I C =100mA, L=10mH, V clamp =400V I C =8A, I B =100mA 1.6 I C =10A, I B =250mA 1.8 I C =12A, I B =300mA 2 2.2 I C =10A, I B =250mA 2.5 I C =12A, I B =300mA 2.7 DC current gain I C = 5A, V CE = 10V VF Diode forward voltage I F =10A ts Srorage time 300 2.5 V CC =24V, L=7mH, V clamp =400V Functional test Fall time V I C =8A, I B =100mA h FE tf 400 10 (see functional test circuit) μS 0.5 *Pulsed: Pulse duration= 300μs, duty cycle= 1.5%. ORDERING INFORMATION SCHEME Darlington series BU941 Type, 15A / 400V Package type A = TO-220AB B = TO-3P(B) www.nellsemi.com Page 2 of 5 A 15 V CC =12V, V clamp =300V, V BE =0, R BE =47Ω, L=7mH, I C =7A, I B =70mA BU941 V A RoHS BU941 Series RoHS SEMICONDUCTOR Nell High Power Products ■ SUSTAINING VOLTAGE TEST CIRCUIT ■ SWITCHING TIME TEST CIRCUIT VD 12V V CC =16V 0V 7mH t1 C 20ms B D.U.T. R1 Vin V clamp R2 D.U.T. V clamp 47Ω E ■ FUNCTION TEST CIRCUIT 24V 16.6ms lnput Signal L=7mH 0 VZ Driver and Current Limiting Circuit 11.6ms Base Current 0.22 μF D.U.T. l B =0.3A 0 100Ω l C =8A Collector Current 0 V clamp Collector Emitter Voltage 0 0.2Ω ■ TYPICAL CHARACTERISTICS Fig.1 DC Current gain 10 4 DC Current gain, h FE V CE =2V 10 3 125°C -40°C 10 2 T C =25°C 10 1 10 -1 10 0 Collector current, l C (A) www.nellsemi.com Page 3 of 5 10 1 24V RoHS BU941 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.3 Collector-Emitter saturation voltage Fig.2 DC Current gain 10 4 4.0 125°C -40°C 10 2 T C =25°C 3.5 10A 2.5 8 2 1.5 6 4 1 10 1 10 -1 10 0 0.5 10 1 0 50 100 200 Base current, l B (mA) Fig.4 Collector-Emitter saturation voltage Fig.5 Base-Emitter saturation voltage h FE =100 2.4 1.2 1.0 -40°C 0.8 T C =25°C 0.6 125°C 0.4 0.2 0 h FE =100 2.2 2.0 1.8 -40°C 1.6 T C =25°C 1.4 125°C 1.2 0 1 4 2 6 8 10 12 1 8 10 Collector current, l C (A) Fig.6 Switching time Fig.7 Safe operating area 10 2 l C MAX PULSED Collector current, l C (A) 1 tf PULSE OPERATION* 10 1 100μs l C MAX CONT 10 0 1ms 10ms 10 -1 *For single non-repelitive pulse 10 -1 1 2 4 6 8 10 10 -2 10 0 12 Collector current, l C (A) www.nellsemi.com 12 10μs ts 10 6 4 2 Collector current, l C (mA) Vclamp=300V, V CC =12V h FE =100, R BE =47Ω, L=7mH, T C =25°C Switching time, μs 150 Collector current, l C (A) 1.4 Collector-Emitter saturation voltage,V CE(SAT) (V) Collector-Emitter saturation voltage,V CE(SAT) (V) 10 3 Base-Emitter saturation voltage,V BE(SAT) (V) DC Current gain, h FE V CE =10V 10 1 D.C. 10 2 Collector-Emitter voltage, V CE (V) Page 4 of 5 10 3 RoHS BU941 Series RoHS SEMICONDUCTOR Nell High Power Products Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) PIN 2 1 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 14.22 (0.560) 13.46 (0.530) 2.67 (0.105) 2.41 (0.095) 0.90 (0.035) 0.70 (0.028) 2.65 (0.104) 2.45 (0.096) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) 2 1 All dimensions in millimeters(inches) 3 1.8 4.7 4.8±0.2 1.5±0.1 Φ3.2 ± 0,1 2.0 4.0 max 20.0 min 19.9±0.3 1.30 15.6±0.4 9.6 5.0 ±0 . 2 TO-3P(B) 3.0 +0.2 1.05 -0.1 5.45±0.1 5.45±0.1 B C E 1 2 3 +0.2 0.65 -0.1 2.20 2 1 All dimensions in millimeters(inches) 3 www.nellsemi.com Page 5 of 5