RECTRON BAT54C SEMICONDUCTOR TECHNICAL SPECIFICATION DUAL SURFACE MOUNT SCHOTTKY Absolute Maximun Ratings per Diode (Ta=25oC) Items Symbol Ratings Unit Reverse Voltage VR 30 V Power Dissipation * Forward Voltage @ If = 100mA Forward Current PTOT 300 mW VF 1.0 V IF 200 mA Junction Temp. TJ -55 to 125 o C Storage Temp. TSTG -55 to 150 o C Dimensions SOTSOT-23 SOT-23 Mechanical Data Items Materials P a cka g e SOT-23 Lead Frame 42 Alloy Lead Finish Solder Plating Bond Wire Au Mold Resin Epoxy Chip Silicon Electrical Characteristics per diode (Ta=25oC) Ratings Symbol Ratings Unit Minimum Repetitive Peak Reverse Voltage VRRM 30 V Maximum Repetitive Peak Forward Current IFRM 300 mA VF 240 320 400 500 1000 mV IR 2.0 uA Cj 15 pF trr 5 ns Rθjc 430 Maximum Forward Voltage IF= 100uA IF= 1mA IF= 10mA IF= 30mA IF= 100mA Maximum Reverse Current VR= 25V Maximum Junction Capacitance VR= 1V, f= 1MHz Maximum Reverse Recovery Time IF= 10mA, IR= 10mA, IRR= 1mA, RL= 100W Thermal Resistance* * (Mounted on a 10x8x0.6mm ceramic substrate) RECTRON USA 1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com o C/W