RECTRON BAT54C

RECTRON
BAT54C
SEMICONDUCTOR
TECHNICAL SPECIFICATION
DUAL SURFACE MOUNT SCHOTTKY
Absolute Maximun Ratings per Diode (Ta=25oC)
Items
Symbol
Ratings
Unit
Reverse Voltage
VR
30
V
Power Dissipation *
Forward Voltage
@ If = 100mA
Forward Current
PTOT
300
mW
VF
1.0
V
IF
200
mA
Junction Temp.
TJ
-55 to 125
o
C
Storage Temp.
TSTG
-55 to 150
o
C
Dimensions
SOTSOT-23
SOT-23
Mechanical Data
Items
Materials
P a cka g e
SOT-23
Lead Frame
42 Alloy
Lead Finish
Solder Plating
Bond Wire
Au
Mold Resin
Epoxy
Chip
Silicon
Electrical Characteristics per diode (Ta=25oC)
Ratings
Symbol
Ratings
Unit
Minimum Repetitive Peak Reverse Voltage
VRRM
30
V
Maximum Repetitive Peak Forward Current
IFRM
300
mA
VF
240
320
400
500
1000
mV
IR
2.0
uA
Cj
15
pF
trr
5
ns
Rθjc
430
Maximum Forward Voltage
IF= 100uA
IF= 1mA
IF= 10mA
IF= 30mA
IF= 100mA
Maximum Reverse Current
VR= 25V
Maximum Junction Capacitance
VR= 1V, f= 1MHz
Maximum Reverse Recovery Time
IF= 10mA, IR= 10mA, IRR= 1mA, RL= 100W
Thermal Resistance*
* (Mounted on a 10x8x0.6mm ceramic substrate)
RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com
o
C/W