RECTRON SEMICONDUCTOR LS4148 TECHNICAL SPECIFICATION 1N4148 Quadro MELF SIGNAL DIODE Qu ad r o ME L F Cathode Identification G 1.7 la ss Absolute Maximum Ratings (Ta=25°C) Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW/°C (25°C) Forward Current IF 150 mA Junction Temp. Tj -65 to 175 °C Storage Temp. Tstg -65 to 175 °C 1.5 +/-0.1 Mechanical Data Items Package Case Lead/Finish Chip Glass 3.5 +/- 0.2 Materials Q UADRO MELF Hermetically sealed glass Double stud/Solder Plating Glass Passivated Dimensions in millimeters Electrical Characteristics (Ta=25°C) Ratings Minimum Breakdown Voltage @IR= 100uA Peak Forward Surge Current tp= 1µsec. Maximum Forward Voltage IF= 10mA Maximum Reverse Current VR= 20V VR= 75V VR= 20V, Tj= 150 °C Maximum Junction Capacitance VR= 0, f= 1 MHz Maximum Reverse Recovery Time IF= 10mA, VR= 6V, IRR= 1mA, RL= 100 Ω Maximum Thermal Resistance (on PC Board 50mm x 50mm x 1.6mm) Maximum Rectification Efficiency Vrf= 2V, f= 100MHz RECTRON USA Symbol BV Ratings 100 Unit V IFsurge 2 A VF 1.0 V 0.025 5.0 50 uA Cj 4 pF trr 4 ns RθJA 500 °C/W ην 0.45 % IR 1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com