RFMD Datasheet Template

PS-2-1000F
Wideband In Phase Two Way Hybrid Combiner/Divider
5.0MHz to 1000MHz
PS-2-1000F
Package: Flatpack
A two-way in-phase hybrid power combiner/divider is a 180° hybrid
power combiner/divider with the difference port (A) internally terminated.
Features
■
Low Insertion Loss
As a two-way power divider, a signal fed into the input port yields two inphase output signals 3 dB down from the input power.
■
2 Way up to 4GHz
■
3 and 4 Way up to 2GHz
As a two-way power combiner, signals applied to the output ports yield a
vector sum at the input port.
■
6 to 9 Way up to 1GHz
Multi-way binary power combiners/dividers are realized by cascading
combinations of the basic two-way device. The power division ratio of
the multi-way combiner/divider is 1/n.
Applications
■
Milcom
■
Electronic Warfare
■
Industrial, Scientific, Medical
■
Aerospace Avionics
■
Military and Civilian Radar
■
Satellite Communications
Functional Schematic
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
®
DS131017
®
RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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PS-2-1000F
Absolute Maximum Ratings
Parameter
Operating Temperature Range
Total Input Power (1/20 Watt Internal Load Dissipation)
Rating
Unit
-54 to +100
°C
1
W
Specifications subject to change without notice.
Environmental conditions: All units are designed to meet their specifications between -54°C and
+100°C and after exposure to any or all of the following tests per MIL-STD-202E.

Thermal Shock: Method 107D, Test Condition B

Altitude: Method 105C, Test Condition G

H.F. Vibration: Method 204C, Test Condition D

Mechanical Shock: Method 213B, Test Condition C

Random Vibration (15 minutes per axis): Method 214, Test Condition IIF

Solderability: Method 208C

Terminal Strength: Method 211A, Test Condition C

Resistance to Soldering Heat: Method 210A, Test Condition B
Sealed units meet the requirements of Method 106D of MIL-STD-202E when exposed to
humidity.
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Specification
Parameter
Unit
Min
Typ
Condition
Max
General Performance
Isolation
-1 dB Bandwidth
20
5.0
dB
1000
Midband Insertion Loss
0.5
Amplitude Unbalance
0.15
Phase Unbalance
3.0
VSWR
1.5
MHz
dB
dB
°C
Specifications subject to change without notice.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131017
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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PS-2-1000F
Typical Performance
Package Drawing (Dimensions in millimeters)
Material: F15 Kovar per ASTM Std.; F-15-68 chemical composition per MIL-STD-1276, type K
Finish: plating: all metal parts gold per MIL-G-45204, type I, grade A, class 1, over nickel per MIL-C-26074, class 1
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131017
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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