NBB-302 NBB-302 Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz The NBB-302 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NBB-302 provides flexibility and stability. The NBB302 is packaged in a low cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. It is available in either packaged or chip (NBB-300-D) form, where its gold metallization is ideal for hybrid circuit designs. Package: MPGA, Bowtie,3x3, Ceramic Features ■ Reliable, Low-Cost HBT Design ■ 12.0dB Gain, +13.7dBm P1dB at 2Ghz ■ High P1dB of +14.0dBm at 6.0GHz and +11.0dBm at 14.0GHz ■ Single Power Supply Operation ■ 50Ω I/O Matched for High Frequency Use Applications Functional Block Diagram ■ Narrow and Broadband Commercial and Military Radio Designs ■ Linear and Saturated Amplifiers ■ Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/LMDS/UNII/VSAT/ WiFi/Cellular/DWDM) Ordering Information NBB-302 25 Piece bag NBB-302-SB 5 Piece sample bag NBB-302-SR 7” Reel with 100 pieces NBB-302-T1 13” Reel with 1000 pieces NBB-302-PCK Populated evaluation board with 5 piece sample bag NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131004 RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 4 NBB-302 Absolute Maximum Ratings Parameter Rating Unit RF Input Power +20 dBm Power Dissipation 300 mW Device Current 70 mA Channel Temperature 150 °C Operating Temperature -45 to +85 °C Storage Temperature -65 to +150 °C Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Exceeding any one or a combination of these limits may cause permanent damage. Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max General Performance Small Signal Power Gain, S21 VD = +3.9V, ICC = 50mA, Z0 = 50Ω, TA = +25°C 12.0 13.5 dB f = 0.1GHz to 1.0GHz 11.0 13.0 dB f = 1.0GHz to 4.0GHz 12.5 dB f = 4.0GHz to 6.0GHz 10.5 dB f = 6.0GHz to 12.0GHz 9.5 (avg) dB f = 12.0GHz to 14.0GHz Gain Flatness, GF ±0.6 dB f = 0.1GHz to 8.0GHz Input and Output VSWR 2.4:1 f = 0.1GHz to 4.0GHz 2.0:1 f = 4.0GHz to 12.0GHz 2.8:1 f = 12.0GHz to 15.0GHz 9.0 Bandwidth, BW 12.5 GHz BW3 (3dB) Output Power at -1dB Compression, P1dB 13.7 dBm f = 2.0GHz 14.8 dBm f = 6.0GHz 11.0 dBm f = 14.0GHz 5.5 dB f = 3.0GHz +23.5 dBm f = 2.0GHz -15 dB Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, / 3.6 3.9 -0.0015 4.2 f = 0.1GHz to 12.0GHz V dB/°C RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131004 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 4 NBB-302 Specification Parameter Unit Min Typ Condition Max MTTF versus Temperature at ICC = 50mA Case Temperature Junction Temperature MTTF 85 °C 122.9 °C >1,000,000 hours 194 °C/W Thermal Resistance θJC RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131004 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 4 NBB-302 Recommended PCB Layout RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131004 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 4