RFMD Datasheet Template

RFHA1042
125W GaN Power Amplifier
225MHz to 450MHz
The RFHA1042 is optimized for military communications,
commercial wireless infrastructure and general purpose
applications in the 225MHz to 450MHz frequency band. Using an
advanced 48V high power density gallium nitride (GaN)
semiconductor process optimized for high peak to average ratio
applications, these high-performance amplifiers achieve 125W
power with high efficiency and flat gain over a broad frequency
range in a single amplifier design. The RFHA1042 is an input
matched GaN transistor packaged in an air cavity ceramic
package which provides excellent thermal stability. Ease of
integration is accomplished through the incorporation of simple,
optimized matching networks external to the package that provide
wideband gain, efficiency, and linearizable performance in a
single amplifier.
RFHA1042
Package: Flanged Ceramic, 2 pin,
RF400-2
Features
■
Advanced GaN HEMT Technology
■
Peak Power 125W Wideband
■
Single Circuit for 225MHz to
450MHz
■
48V Modulated Typical
Performance




■
POUT 45.2dBm
Gain 18.5dB
Drain Efficiency 42%
ACP-26dBc
48V CW Typical Broadband
Performance



POUT 51.4dBm
Gain 16dB
Drain Efficiency 60%
■
-40°C to 85°C Operating
Temperature
■
Optimized for Video Bandwidth
and Minimized Memory Effects
■
Large Signal Models Available
Functional Block Diagram
Ordering Information
RFHA1042S2
Sample bag with 2 pieces
RFHA1042SB
Bag with 5 pieces
RFHA1042SQ
Bag with 25 pieces
RFHA1042SR
Short reel with 50 pieces
RFHA1042TR13
13” Reel with 300 pieces
RFHA1042PCBA-410
Fully assembled evaluation board
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
®
Applications
■
Military Communications
■
Commercial Wireless Infrastructure
■
General Purpose UHF Amplifiers
■
Public Mobile Radios
DS131023
®
RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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RFHA1042
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)
150
V
Gate Voltage (VG)
-8 to 2
V
Gate Current (IG)
105
mA
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TL)
-40 to +85
°C
250
°C
Operating Junction Temperature (TJ)
Human Body Model
Class 1A
MTTF (TJ < 200°C, 95% Confidence Limits)*
1.8E + 07
Hours
MTTF (TJ < 250°C, 95% Confidence Limits)*
1.1E + 05
Hours
Thermal Resistance, Rth (junction to case) measured
at TC = 85°C, DC bias only
1.4
°C/W
Thermal Resistance, Rth (junction to case) measured
at TC = 85°C, CW
1.27
°C/W
Caution! ESD sensitive device.
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21, <1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
* MTTF – median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for FIT
(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table above.
Bias Conditions should also satisfy the following expression: P DISS < (TJ – TC) / RTH J-C and TC = TCASE
Nominal Operating Parameters
Specification
Parameter
Unit
Min
Typ
Condition
Max
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
48
-4.5
Drain Bias Current
Frequency of Operation
-3.1
V
-2.5
600
225
V
mA
450
MHz
IG(OFF) – Gate Leakage
2
mA
VG = -8V, VD = 0V
ID(OFF) – Drain Leakage
2.5
mA
VG = -8V, VD = 48V
DC Functional Test
VGS(TH) – Threshold Voltage
-3.5
V
VD = 48V, ID = 28mA
VDS(ON) – Drain Voltage at High
Current
0.25
V
VG = 0V, ID = 1.5A
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131023
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
2 of 13
RFHA1042
Specification
Parameter
Unit
Min
Typ
Condition
Max
Capacitance
CRSS
12.5
pF
CISS
160.5
pF
COSS
36
pF
Test Conditions: VDSQ = 48V, IDQ = 600mA, T = 25°C, Performance
in a standard tuned test fixture, ACP: ±1.23MHz at 1.5MHz BW
RF Functional Test
VGS
-3.2
V
Gain
17
18
dB
Drain Efficiency
35
42
%
Input Return Loss
PAR
VG = -8V, VD = 0V
-13.5
5
5.7
-8
dB
VD = 48V, ID = 600mA
IS95 (9 channel model, 9.8dB PAR at 0.01% CCDF), POUT = 45.2dBm,
f = 450MHz
dB
Test Conditions: VDSQ = 48V, IDQ = 600mA, T = 25°C, Performance
in a standard tuned test fixture, ACP: ±1.23MHz at 1.5MHz BW
RF Typical Performance
Gain
20
dB
Drain Efficiency
41
%
Input Return Loss
-9
dB
Adjacent Channel Power
-36
dBc
Power Gain
17
dB
P3dB Power
51.6
dBm
Saturated Drain Efficiency
75
%
Power Gain
16
dB
50.4
dBm
47
%
3GPP (TM1, 7.5dB PAR at 0.01% CCDF), POUT = 45dBm
P3dB Output Power
Drain Efficiency
CW, f = 225MHz
CW, f = 450MHz
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131023
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 13
RFHA1042
Typical Performance in Fixed Tuned Test Fixture: (T = 25°C unless noted)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131023
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
4 of 13
RFHA1042
Typical Performance in Fixed Tuned Test Fixture: (T = 25°C unless noted) (continued)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131023
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
5 of 13
RFHA1042
Typical Performance in Fixed Tuned Test Fixture: (T = 25°C unless noted) (continued)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131023
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
6 of 13
RFHA1042
Typical Performance in Fixed Tuned Test Fixture: (T = 25°C unless noted) (continued)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131023
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
7 of 13
RFHA1042
Evaluation Board Schematic
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131023
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
8 of 13
RFHA1042
Evaluation Board Bill of Materials (BOM)
Description
Manufacturer
Manufacturer’s P/N
CAP, 470pF, 5%, 500 WVDC,.110x.110
ATC
ATC100B471JT
C2
8.2pF 800A Chip Capacitor
ATC
ATC800A8R2JT
C3
10pF 800A Chip Capacitor
ATC
ATC800A100JT
C4, C5
27pF 800A Chip Capacitor
ATC
ATC800A270JT
C7
18pF 800A Chip Capacitor
ATC
ATC800A180JT
C6
120pF 800B Chip Capacitor
ATC
ATC800B121JT
C9
15pF 800A Chip Capacitor
ATC
ATC800A150JT
C10
12pF 800A Chip Capacitor
ATC
ATC800A120JT
C8, C11, C12
6.8pF 800A Chip Capacitor
ATC
ATC800A6R8JT
C13
3.3pF 800A Chip Capacitor
ATC
ATC800A3R3JT
C14
1.0pF 800A Chip Capacitor
ATC
ATC800A1R0BT
C16
CAP CER 1.0µF 100V 10% X7R 1210
Murata
GRM32CR72A105KA35B
CAP, 0.1µF, 10%, 100V, X7R, 1210
Murata Electronics
GRM32NR72A104KA01L
Item
C1, C15, C19, C20
C17, C22
C23
CAP, 4.7µF, 10%, 100V, X7R, 2220
Murata Electronics
GRM55ER72A475KA01L
C24
CAP, 100µF, 20%, 50V, AL ELEC, SMD
PANASONIC INDUSTRIAL CO
ECE-V1HA101UP
C25
CAP, 330µF, +/-20%, 100V, FC, RAD
PANASONIC INDUSTRIAL CO
EEU-FC2A331
L1
9.1nH 0805HT (2012) Ceramic Chip Inductor
Coilcraft
0805HT-9N1TJL
L2
1.65nH Micro Spring™ Air Core Inductor
Coilcraft
0906-2KL_
L3
3.7nH Air Core Inductor
Coilcraft
GA3092-ALB
L4
8nH Mini Spring™ Air Core Inductor
Coilcraft
A03TGL_
L5
12.5nH Mini Spring™ Air Core Inductor
Coilcraft
A04TJL_
L6
5.6nH 0805HT (2012) Ceramic Chip Inductors
Coilcraft
0805HT-5N6TJL
L7
2.5nH Mini Spring™ Air Core Inductor
Coilcraft
A01TKL_
R1, R2
RES, 4.7Ω 5%, 1/4W, 1206
PANASONIC INDUSTRIAL CO
ERJ-8GEYJ4R7V
R3
RES, 10Ω, 5%, 1/4W, 1206
PANASONIC INDUSTRIAL CO
ERJ-8GEYJ100V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131023
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
9 of 13
RFHA1042
Package Drawing (Dimensions in millimeters)
NOTE: PLATING: 35 – 55 µ” Au OVER 100 µ” NI MIN. ON METAL AND METALLIZATION AREAS
Pin Names and Descriptions
Pin
Name
Description
1
GATE
VGQ RF Input
2
DRAIN
VDQ RF Output
3
SOURCE
Ground Base
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131023
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
10 of 13
RFHA1042
Bias Instruction for RFHA1042 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
Evaluation board requires additional external fan cooling.
Connect all supplies before powering evaluation board.
1.
Connect RF cables at RFIN and RFOUT.
2.
Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3.
Apply -5V to VG.
4.
Apply 48V to VD.
5.
Increase VG until drain current reaches 600mA or desired bias point.
6.
Turn on the RF input.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131023
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
11 of 13
RFHA1042
Evaluation Board Layout
Device Impedances
Z Source (Ω)
Z Load (Ω)
225
7.7 + j1.7
4.4 + j6.0
300
6.3 + j2.2
6.9 + j3.3
375
7.0 + j2.2
6.6 + j3.6
450
3.0 + j0.4
7.2 + j2.3
Frequency (MHz)
NOTE: Device impedances reported are the measured evaluation board impedances chosen for a
tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131023
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
12 of 13
RFHA1042
Device Handling/Environmental Conditions
RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a
high humidity, high temperature environment.
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation
boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These
capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the
value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal
voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (V GS = -8V) and zero volts
applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is
removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance
values presented in the typical characteristics table of the device represent the measured input (C ISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is
saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the
source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum
limits. RFMD recommends applying VGS = -5V before applying any VDS.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be
adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (I DQ)
shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering
manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on
performance tradeoffs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is
measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the
package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but
sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the
measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the
maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from
ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC
power, it is possible to calculate the junction temperature of the device.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS131023
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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