RFHA1042 125W GaN Power Amplifier 225MHz to 450MHz The RFHA1042 is optimized for military communications, commercial wireless infrastructure and general purpose applications in the 225MHz to 450MHz frequency band. Using an advanced 48V high power density gallium nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these high-performance amplifiers achieve 125W power with high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFHA1042 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier. RFHA1042 Package: Flanged Ceramic, 2 pin, RF400-2 Features ■ Advanced GaN HEMT Technology ■ Peak Power 125W Wideband ■ Single Circuit for 225MHz to 450MHz ■ 48V Modulated Typical Performance ■ POUT 45.2dBm Gain 18.5dB Drain Efficiency 42% ACP-26dBc 48V CW Typical Broadband Performance POUT 51.4dBm Gain 16dB Drain Efficiency 60% ■ -40°C to 85°C Operating Temperature ■ Optimized for Video Bandwidth and Minimized Memory Effects ■ Large Signal Models Available Functional Block Diagram Ordering Information RFHA1042S2 Sample bag with 2 pieces RFHA1042SB Bag with 5 pieces RFHA1042SQ Bag with 25 pieces RFHA1042SR Short reel with 50 pieces RFHA1042TR13 13” Reel with 300 pieces RFHA1042PCBA-410 Fully assembled evaluation board RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® Applications ■ Military Communications ■ Commercial Wireless Infrastructure ■ General Purpose UHF Amplifiers ■ Public Mobile Radios DS131023 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 13 RFHA1042 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to 2 V Gate Current (IG) 105 mA Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TL) -40 to +85 °C 250 °C Operating Junction Temperature (TJ) Human Body Model Class 1A MTTF (TJ < 200°C, 95% Confidence Limits)* 1.8E + 07 Hours MTTF (TJ < 250°C, 95% Confidence Limits)* 1.1E + 05 Hours Thermal Resistance, Rth (junction to case) measured at TC = 85°C, DC bias only 1.4 °C/W Thermal Resistance, Rth (junction to case) measured at TC = 85°C, CW 1.27 °C/W Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. * MTTF – median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table above. Bias Conditions should also satisfy the following expression: P DISS < (TJ – TC) / RTH J-C and TC = TCASE Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max Recommended Operating Conditions Drain Voltage (VDSQ) Gate Voltage (VGSQ) 48 -4.5 Drain Bias Current Frequency of Operation -3.1 V -2.5 600 225 V mA 450 MHz IG(OFF) – Gate Leakage 2 mA VG = -8V, VD = 0V ID(OFF) – Drain Leakage 2.5 mA VG = -8V, VD = 48V DC Functional Test VGS(TH) – Threshold Voltage -3.5 V VD = 48V, ID = 28mA VDS(ON) – Drain Voltage at High Current 0.25 V VG = 0V, ID = 1.5A RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131023 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 13 RFHA1042 Specification Parameter Unit Min Typ Condition Max Capacitance CRSS 12.5 pF CISS 160.5 pF COSS 36 pF Test Conditions: VDSQ = 48V, IDQ = 600mA, T = 25°C, Performance in a standard tuned test fixture, ACP: ±1.23MHz at 1.5MHz BW RF Functional Test VGS -3.2 V Gain 17 18 dB Drain Efficiency 35 42 % Input Return Loss PAR VG = -8V, VD = 0V -13.5 5 5.7 -8 dB VD = 48V, ID = 600mA IS95 (9 channel model, 9.8dB PAR at 0.01% CCDF), POUT = 45.2dBm, f = 450MHz dB Test Conditions: VDSQ = 48V, IDQ = 600mA, T = 25°C, Performance in a standard tuned test fixture, ACP: ±1.23MHz at 1.5MHz BW RF Typical Performance Gain 20 dB Drain Efficiency 41 % Input Return Loss -9 dB Adjacent Channel Power -36 dBc Power Gain 17 dB P3dB Power 51.6 dBm Saturated Drain Efficiency 75 % Power Gain 16 dB 50.4 dBm 47 % 3GPP (TM1, 7.5dB PAR at 0.01% CCDF), POUT = 45dBm P3dB Output Power Drain Efficiency CW, f = 225MHz CW, f = 450MHz RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131023 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 13 RFHA1042 Typical Performance in Fixed Tuned Test Fixture: (T = 25°C unless noted) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131023 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 13 RFHA1042 Typical Performance in Fixed Tuned Test Fixture: (T = 25°C unless noted) (continued) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131023 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 13 RFHA1042 Typical Performance in Fixed Tuned Test Fixture: (T = 25°C unless noted) (continued) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131023 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 13 RFHA1042 Typical Performance in Fixed Tuned Test Fixture: (T = 25°C unless noted) (continued) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131023 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 13 RFHA1042 Evaluation Board Schematic RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131023 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 13 RFHA1042 Evaluation Board Bill of Materials (BOM) Description Manufacturer Manufacturer’s P/N CAP, 470pF, 5%, 500 WVDC,.110x.110 ATC ATC100B471JT C2 8.2pF 800A Chip Capacitor ATC ATC800A8R2JT C3 10pF 800A Chip Capacitor ATC ATC800A100JT C4, C5 27pF 800A Chip Capacitor ATC ATC800A270JT C7 18pF 800A Chip Capacitor ATC ATC800A180JT C6 120pF 800B Chip Capacitor ATC ATC800B121JT C9 15pF 800A Chip Capacitor ATC ATC800A150JT C10 12pF 800A Chip Capacitor ATC ATC800A120JT C8, C11, C12 6.8pF 800A Chip Capacitor ATC ATC800A6R8JT C13 3.3pF 800A Chip Capacitor ATC ATC800A3R3JT C14 1.0pF 800A Chip Capacitor ATC ATC800A1R0BT C16 CAP CER 1.0µF 100V 10% X7R 1210 Murata GRM32CR72A105KA35B CAP, 0.1µF, 10%, 100V, X7R, 1210 Murata Electronics GRM32NR72A104KA01L Item C1, C15, C19, C20 C17, C22 C23 CAP, 4.7µF, 10%, 100V, X7R, 2220 Murata Electronics GRM55ER72A475KA01L C24 CAP, 100µF, 20%, 50V, AL ELEC, SMD PANASONIC INDUSTRIAL CO ECE-V1HA101UP C25 CAP, 330µF, +/-20%, 100V, FC, RAD PANASONIC INDUSTRIAL CO EEU-FC2A331 L1 9.1nH 0805HT (2012) Ceramic Chip Inductor Coilcraft 0805HT-9N1TJL L2 1.65nH Micro Spring™ Air Core Inductor Coilcraft 0906-2KL_ L3 3.7nH Air Core Inductor Coilcraft GA3092-ALB L4 8nH Mini Spring™ Air Core Inductor Coilcraft A03TGL_ L5 12.5nH Mini Spring™ Air Core Inductor Coilcraft A04TJL_ L6 5.6nH 0805HT (2012) Ceramic Chip Inductors Coilcraft 0805HT-5N6TJL L7 2.5nH Mini Spring™ Air Core Inductor Coilcraft A01TKL_ R1, R2 RES, 4.7Ω 5%, 1/4W, 1206 PANASONIC INDUSTRIAL CO ERJ-8GEYJ4R7V R3 RES, 10Ω, 5%, 1/4W, 1206 PANASONIC INDUSTRIAL CO ERJ-8GEYJ100V RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131023 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 13 RFHA1042 Package Drawing (Dimensions in millimeters) NOTE: PLATING: 35 – 55 µ” Au OVER 100 µ” NI MIN. ON METAL AND METALLIZATION AREAS Pin Names and Descriptions Pin Name Description 1 GATE VGQ RF Input 2 DRAIN VDQ RF Output 3 SOURCE Ground Base RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131023 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 13 RFHA1042 Bias Instruction for RFHA1042 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -5V to VG. 4. Apply 48V to VD. 5. Increase VG until drain current reaches 600mA or desired bias point. 6. Turn on the RF input. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131023 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 11 of 13 RFHA1042 Evaluation Board Layout Device Impedances Z Source (Ω) Z Load (Ω) 225 7.7 + j1.7 4.4 + j6.0 300 6.3 + j2.2 6.9 + j3.3 375 7.0 + j2.2 6.6 + j3.6 450 3.0 + j0.4 7.2 + j2.3 Frequency (MHz) NOTE: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131023 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 12 of 13 RFHA1042 Device Handling/Environmental Conditions RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (V GS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (C ISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (I DQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance tradeoffs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131023 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 13 of 13