RFHA1003 RFHA1003 9W GaN Wide-Band Power Amplifier 30MHz to 512MHz The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA1003 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. Package: AIN Leadless Chip Carrier, SO8 Features ■ Advanced GaN HEMT Technology ■ Output Power of 9W ■ Advanced Heat-Sink Technology ■ 30MHz to 512MHz Instantaneous Bandwidth ■ Input Internally Matched to 50Ω ■ 28V Operation Typical Performance ■ ■ Output Power 39.5dBm Gain 19dB Power Added Efficiency 70% -40°C to 85°C Operating Temperature Large Signal Models Available Applications ■ Pre-Driver for Multiband Wireless Infrastructure Transmitters ■ Class AB Operation for Public Mobile Radio ■ Power Amplifier Stage for Commercial Wireless Infrastructure Functional Block Diagram Ordering Information RFHA1003S2 Sample bag with 2 pieces ■ General Purpose Tx Amplification RFHA1003SB Bag with 5 pieces ■ Test Instrumentation RFHA1003SQ Bag with 25 pieces ■ Civilian and Military Radar RFHA1003SR Short reel with 100 pieces RFHA1003TR7 7” Reel with 500 pieces RFHA1003TR13 13” Reel with 2500 pieces RFHA1003PCBA-410 Fully assembled evaluation board 30MHz to 512MHz; 28V operation RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® DS131018 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 11 RFHA1003 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 5 mA Operational Voltage 32 V RF- Input Power 27 dBm Ruggedness (VSWR) Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. 12:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TL) -40 to +85 °C 250 °C Operating Junction Temperature (TJ) Human Body Model Class 1C MTTF (TJ < 200°C, 95% Confidence Limits)* 1.8E + 07 MTTF (TJ < 250°C, 95% Confidence Limits)* 1.1E + 05 Thermal Resistance, RTH (Junction to Case) measured at TC = 85°C, DC bias only 9.8 Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Hours °C/W * MTTF – median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table above. Bias Conditions should also satisfy the following expression: P DISS < (TJ – TC) / RTH J-C and TC = TCASE Nominal Operating Parameters Specification Parameter Unit Min Typ Max 28 32 V -3 -2 V Condition Recommended Operating Conditions Drain Voltage (VDSQ) Gate Voltage (VGSQ) -5 Drain Bias Current 55 mA RF Input Power (PIN) 25 Input Source VSWR 10:1 dbm RF Performance Characteristics Frequency Range 30 512 MHz Small signal 3dB bandwidth Linear Gain 19 dB POUT = 30dBm, 100MHz Power Gain 16 dB P3DB, 100MHz Gain Flatness 2 dB POUT = 30dBm, 30MHz to 2500MHz -0.02 dB/°C Gain Variation with Temperature Input Return Loss (S11) Output Power (P3dB) -10 dB 39.5 dBm 70 % 30MHz to 512MHz Power Added Efficiency (PAE) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131018 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 11 RFHA1003 Specification Parameter Unit Min Typ Test Conditions: VDSQ = 28V, IDQ = 55mA, CW, f = 300MHz, T = 25ºC, Performance in a standard tuned test fixture RF Functional Test VGS(Q) Gain Power Gain Condition Max -3.0 V 18 18.5 dB 14.3 15.5 dB Input Return Loss -10 PIN = 10dBm dB PIN = 25dBm Output Power 39 39.5 dBm Power Added Efficiency (PAE) 60 70 % RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131018 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 11 RFHA1003 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 30MHz to 512MHz: (T = 25°C unless noted) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131018 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 11 RFHA1003 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 30MHz to 512MHz: (T = 25°C unless noted) (continued) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131018 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 11 RFHA1003 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 30MHz to 512MHz: (T = 25°C unless noted) (continued) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131018 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 11 RFHA1003 Package Drawing (Dimensions in millimeters) Notes: 1. A123: Trace Code 2. 1234: Serial Number 3. Package Style: Ceramic SO8 Pin Names and Descriptions Pin Name Description 1 VGS Gate DC Bias Pin 2-3 RFIN RF Input 4-5 N/C No Connect 6-7 RFOUT/VDS RF Output/Drain DC Bias Pin 8 N/C No Connect Pkg Base GND Ground RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131018 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 11 RFHA1003 Bias Instruction for RFHA1003 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -5V to VG. 4. Apply 28V to VD. 5. Increase VG until drain current reaches 55mA or desired bias point. 6. Turn on the RF input. Typical test data provided is measured to SMA connector reference plane, and include evaluation board/broadband bias network mismatch and losses. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131018 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 11 RFHA1003 Evaluation Board Schematic Evaluation Board Bill of Materials (BOM) Component Value Manufacturer Part Number C1, C2 2400pF Dielectric Labs Inc C08BL242X-5UN-X0 C11 10000pF Murata Electronics GRM188R71H103KA01D C15 10µF Murata Electronics GRM21BF51C106ZE15L C20 0.8pF ATC 100A0R8BW150XT C25 4.7µF Murata Electronics GRM55ER72A475KA01L R11 0Ω Panasonic ERJ-3GEY0R00V L20 5.4nH Coilcraft 0906-5_LB L21 0.9µH Coilcraft 1008AF-901XJLC NOT USED - - C21, R21 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131018 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 11 RFHA1003 Evaluation Board Layout Device Impedances Frequency (MHz) RFHA1003PCBA-410 (30MHz to 512MHz) Z Source (Ω) Z Load (Ω) 30 49.84-j1.61 45.86+j11.88 100 50.00-j1.36 49.11+j1.28 150 49.77-j1.68 48.20-j1.43 200 49.58-j2.22 46.77-j3.34 250 49.41-j2.71 44.97-j4.64 300 49.17-j3.06 42.97-j5.24 350 48.77-j3.50 40.74-5.48 400 48.44-j3.95 38.41-j5.24 450 48.07-j4.21 36.28-j4.57 512 47.45-j4.64 33.49-j3.34 NOTE: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power performance across the entire frequency bandwidth. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131018 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 11 RFHA1003 Device Handling/Environmental Conditions RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts V GS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance tradeoffs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS131018 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 11 of 11