DG9432, DG9433, DG9434 Vishay Siliconix Low-Voltage Dual SPST Analog Switch DESCRIPTION FEATURES The DG9432, DG9433, DG9434 is a dual single-pole/singlethrow monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 25 ns, tOFF: 20 ns), the DG9432, DG9433, DG9434 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. • • • • The DG9432, DG9433, DG9434 is built on Vishay Siliconix’s low voltage BCD-15 process. An epitaxial layer prevents latchup. Break-before-make is guaranteed for DG9432, DG9433, DG9434. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. Wide operation voltage (+ 2.7 V to + 12 V) Low charge injection - QINJ: 1 pC Low power consumption TTL/CMOS logic compatible over the full operating voltage range • Available in MSOP-8 and SOT23-8 • Compliant to RoHS Directive 2002/95/EC BENEFITS • • • • Reduced power consumption Simple logic interface High accuracy Reduce board space APPLICATIONS • • • • • • • Battery operated systems Portable test equipment Sample and hold circuits Cellular phones Communication systems Military radio PBX, PABX guidance and control systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION - DG9432 DG9432, SOT23-8 DG9432, MSOP-8 NC1 1 8 V+ NC1 1 8 COM1 COM1 2 7 IN1 V+ 2 7 IN1 IN2 3 6 COM2 IN2 3 6 GND GND 4 5 NC2 COM2 4 5 NC2 Top View Top View Device Marking: 9432 Device Marking: 4G TRUTH TABLE DG9432 Document Number: 72311 S11-1029-Rev. B, 23-May-11 Logic Switch 0 On 1 Off www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9432, DG9433, DG9434 Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION - DG9433/DG9434 DG9433. SOT23-8 DG9433, MSOP-8 NO1 1 8 V+ NO1 1 8 COM1 COM1 2 7 IN1 V+ 2 7 IN1 IN2 3 6 COM2 IN2 3 6 GND GND 4 5 NO2 COM2 4 5 NO2 Top View Top View Device Marking: 9433 Device Marking: 4H TRUTH TABLE DG9433 Logic Switch 0 Off 1 On DG9434. SOT23-8 DG9434, MSOP-8 NO 1 8 V+ NO1 1 8 COM1 COM1 2 7 IN1 V+ 2 7 IN1 IN2 3 6 COM2 IN2 3 6 GND GND 4 5 NC2 COM2 4 5 NC2 Top View Top View Device Marking: 9434 Device Marking: 4I TRUTH TABLE DG9434 Logic Switch-1 0 Off Switch-2 On 1 On Off Package Part Number DG9432DQ-T1-E3 MSOP-8 DG9433DQ-T1-E3 ORDERING INFORMATION Temp. Range DG9434DQ-T1-E3 - 40 °C to 85 °C DG9432DS-T1-E3 SOT23-8 DG9433DS-T1-E3 DG9433DS-T1-E3 www.vishay.com 2 Document Number: 72311 S11-1029-Rev. B, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9432, DG9433, DG9434 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Reference V+ to GND Unit - 0.3 to + 13.5 IN, COM, NC, NOa V - 0.3 to (V+ + 0.3) Continuous Current (Any terminal) ± 10 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 20 Storage Temperature (D suffix) mA - 65 to 150 Power Dissipation (Packages)b c MSOP-8 320 SOT23-8c 515 °C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6.5 mW/°C above 75 °C. SPECIFICATIONS V+ = 3 V Test Conditions Otherwise Unless Specified V+ = 3.3 V, ± 10 %, VIN = 0.4 V or 1.8 Ve Limits - 40 °C °C to 85 °C Temp.a Min.c VANALOG Full V- Drain-Source On- Resistance R(on) RON Matchd Ron Parameter Symbol Unit Typ.b Max.c V+ V Room Full 81 100 120 Room 0.4 3.0 Switch On Resistance Analog Signal Rangee V+ = 2.7 V, ICOM = 1 mA, VCOM = 1.5 V Digital Control Input, High Voltage VINH Input, Low Voltage VINL Input Current IINH V+ Ranges 2.7 to 5 V Full 1.8 Full 0.4 -1 1 V µA Dynamic Characteristics Break-Before-Maked,g tOPEN Room Full 60 80 100 Room Full 14 25 35 Q CL = 1 nF, RGEN = 0 , Vg = 0 V Room 0.16 OIRR CL = 5 pF, RL = 50 , f = 1 MHz Room 77 CL = 5 pF, RL = 50 , f = 10 MHz Room 55 XTALK RL = 50 , f = 1 MHz, V+ = 2.5 V Room 98 CNO/NC(off) f = 1 MHz, VNC/NO = 0 V Room 7.5 Room 7.8 Room 22 tON Turn-Off Timed tOFF Off-Isolationd Crosstalk d Source Off Capacitanced 1 V+ = 3 V, RL = 300 VNO = VNC = 1.5 V CL = 35 pF, VIN = 0 V, 3 V Turn-On Timed Charge Injectiond Room Full Drain Off Capacitanced CCOM(off) Drain On Capacitanced CCOM(on) f = 1 MHz VCOM = 0 V ns pC dB pF V+ = 3.3 V, VIN = 0 or V+ Room -1 -1 µA Supply Current I+ Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. d. Guarantee by design, not subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 12 V leakage testing, not production tested. g. Applies for DG9434 only. Document Number: 72311 S11-1029-Rev. B, 23-May-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9432, DG9433, DG9434 Vishay Siliconix SPECIFICATIONS V+ = 5 V Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 5 V, ± 10 %, VIN = 0.4 V or 1.8 Ve Limits - 40 °C °C to 85 °C Temp.a Min.c Full V- Typ.b Unit Max.c Switch On Resistance Analog Signal Rangee Drain-Source On-Resistance RDS(on) Match VANALOG V+ = 4.5 V, ICOM = 1 mA VCOM = 2.5 V or 3.5 V Room Full 39 60 70 R(on) V+ = 4.5 V, ICOM = 1 mA, VCOM = 3.5 V Room 0.3 3.0 Currentf ICOM(off) Channel On Leakage Currentf V R(on) INC/NO(off) Switch Off Leakage V+ V+ = 5 V, VCOM = 0.5 V, 4.5 V VNC/NO = 4.5 V, 0.5 V ICOM(on) Room Full -1 - 10 0.3 1 10 Room Full -1 - 10 0.3 1 10 Room Full -1 - 10 0.3 1 10 Full 1.8 nA Digital Control Input, High Voltage VINH Input, Low Voltage VINL Input Current IINH V+ Ranges 2.7 to 5 V Full 0.4 -1 V 1 µA ns Dynamic Characteristics Break-Before-Maked,g tOPEN 60 70 Room Full 10 20 30 CL = 1 nF, RGEN = 0 , Vg = 0 V Room 0.56 OIRR CL = 5 pF, RL = 50 , f = 1 MHz Room 76 CL = 5 pF, RL = 50 , f = 10 MHz, V+ = 5 V Room 54 XTALK RL = 50 , f = 1 MHz, V+ = 5 V Room 96 CNC/NO(off) f = 1 MHz, VNC/NO = 0 V Turn-Off Time tOFF Q d Crosstalk Source Off Capacitanced d Drain Off Capacitance d Drain On Capacitance Supply Current 1 33 tON Off-Isolationd Room Full Room Full Turn-On Time Charge Injectiond V+ = 5 V, RL = 300 VNO = VNC = 3 V CL = 35 pF, VIN = 0 V, 5 V CCOM(off) CCOM(on) I+ f = 1 MHz, VCOM = 0 V V+ = 5.5 V, VIN = 0 or V+ Room 7.5 Room 7.8 Room Room pC dB pF 22 -1 -1 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. d. Guarantee by design, not subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 12 V leakage testing, not production tested. g. Applies for DG9434 only. www.vishay.com 4 Document Number: 72311 S11-1029-Rev. B, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9432, DG9433, DG9434 Vishay Siliconix SPECIFICATIONS V+ = 12 V Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 12 V, ± 10 %, VIN = 0.8 V or 2.4 Ve Limits - 40 °C °C to 85 °C Temp.a Min.c Full V- Typ.b Unit Max.c Switch On Resistance Analog Signal Rangee Drain-Source On-Resistance VANALOG R(on) R(on) RDS(on) Match V+ = 10.8 V, ICOM = 1 mA, VCOM = 9 V INC/NO(off) Switch Off Leakage Currenta ICOM(off) Channel On Leakage Currenta V+ = 12 V, VS = 1/11 V, VCOM = 11/1 V ICOM(on) V+ V Room Full 19 30 40 Room 0.3 3.0 Room Full -1 - 10 0.3 1 10 Room Full -1 - 10 0.3 1 10 Room Full -1 - 10 0.3 1 10 nA Digital Control Input, High Voltage VINH Input, Low Voltage VINL Input Current IINH V+ = 12 V Full Full 2.4 0.8 -1 V 1 µA ns Dynamic Characteristics Break-Before-Maked,g tOPEN Room Full 21 35 40 Room Full 6 18 25 CL = 1 nF, RGEN = 0 , Vg = 0 V, V+ = 5 V Room 0.36 OIRR CL = 5 pF, RL = 50 , f = 1 MHz Room 75 CL = 5 pF, RL = 50 , f = 10 MHz Room 53 XTALK RL = 50 , f = 1 MHz, V+ = 5 V Room 96 CNO/NC(off) f = 1 MHz, VNC/NO = 0 V Room 7.5 Room 7.8 Room 22 tON Turn-Off Time tOFF Q Off-Isolationd Crosstalk d Source Off Capacitanced d CCOM(off) Drain On Capacitanced CCOM(on) Drain Off Capacitance Supply Current 1 V+ = 12 V, RL = 300 VNO = VNC = 8 V CL = 35 pF, VIN = 0 V, 12 V Turn-On Time Charge Injectiond Room Full I+ f = 1 MHz, VCOM = 0 V V+ = 12 V, VIN = 0 or V+ Room -1 pC dB pF -1 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. d. Guarantee by design, not subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 12 V leakage testing, not production tested. g. Applies for DG9434 only. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 72311 S11-1029-Rev. B, 23-May-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9432, DG9433, DG9434 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 150 120 T = 25 °C IS = 1 mA A = 85 °C B = 25 °C C = - 40 °C ICOM = 1 mA 125 V+ = 2.5 V R ON - On-Resistance (Ω) R ON - On-Resistance (Ω) 100 80 60 V+ = 5 V 40 V+ = 10 V 100 V+ = 2.5 V A 75 V+ = 12 V B V+ = 5 V C 50 25 20 A A B C B C V+ = 12 V 0 0 0 2 4 6 8 10 0 12 2 4 VCOM - Analog Voltage (V) RON vs. VCOM and Single Supply Voltage 8 10 12 RON vs. Analog Voltage and Temperature 200 100 V+ = 12 V 150 INO(off) 10 100 ICOM(off) Leakage Current (pA) Leakage Current (pA) 6 VCOM - Analog Voltage (V) ICOM(on) ICOM(off) ICOM(on) 50 0 - 50 INO(off)/INC(off) - 100 - 150 1 - 60 - 200 - 40 - 20 0 20 40 60 80 0 100 2 6 8 10 12 VCOM, V NO, V NC - Analog Voltage Temperature (°C) Leakage Current vs. Analog Voltage Leakage Current vs. Temperature 100 1000 tON V+ = 2.5 V 80 I+ - Supply Current (pA) tON, tOFF - Switching Time (ns) 4 60 tON V+ = 5 V 40 100 V+ = 5 V VIN = 0 V 10 1 20 tOFF V+ = 2.5 V tOFF V+ = 5 V 0 - 60 - 40 - 20 0 20 40 60 80 Temperature (°C) Switching Time vs. Temperature www.vishay.com 6 100 0.1 - 60 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Supply Current vs. Temperature Document Number: 72311 S11-1029-Rev. B, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9432, DG9433, DG9434 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.8 2.5 0.6 V+ = 2.5 V 0.4 V+ = 5 V 0.2 1.5 Qinj (pc) VT - Switching Threshold 2.0 - 0.0 - 0.2 1.0 - 0.4 - 0.6 0.5 - 0.8 0.0 - 1.0 0 2 4 6 8 10 12 0 14 1 3 4 5 6 VCOM - Analog Voltage (V) V+ - Supply Voltage Switching Threshold vs. Supply Voltage Charge Injection at Source 1000 20 0 2 Insertion Loss - 3 dB = 260 MHz Loss (dB) - 20 I+ Supply Current (µA) 800 V+ = 3 V, 5 V RL = 50 Ω - 40 OIRR - 60 - 80 600 400 200 Crosstalk - 100 0 - 120 100K 1M 10M 100M Frequency (MHz) Insertion Loss, Off Isolation and Crosstalk vs. Frequency Document Number: 72311 S11-1029-Rev. B, 23-May-11 1G 0 2M 4M 6M 8M 10M Input Switching Frequency Supply Current vs. Input Switching Frequency www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9432, DG9433, DG9434 Vishay Siliconix TEST CIRCUITS V+ Logic Input 50 % V+ NO or NC Switch Input tr < 20 ns tf < 20 ns 0V Switch Output COM VOUT 0.9 x V OUT Switch Output IN Logic Input RL 300 Ω GND CL 35 pF 0V tON tOFF 0V Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) RL VOUT = VCOM R L + R ON Figure 1. Switching Time V+ Logic Input V+ V1 NO or NC COM1 NO or NC COM2 V2 tr < 5 ns tf < 5 ns 0V RL 300 Ω CL 35 pF GND VNC = VNO VO Switch Output 90 % 0V tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen ΔVOUT V+ NC or NO COM VOUT VOUT + IN Vgen CL 3V IN On Off On GND Q = ΔVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection www.vishay.com 8 Document Number: 72311 S11-1029-Rev. B, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9432, DG9433, DG9434 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ COM IN COM 0 V, 2.4 V NC or NO V NC/ NO Off Isolation = 20 log RL GND V COM Analyzer Figure 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72311. Document Number: 72311 S11-1029-Rev. B, 23-May-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix MSOP: 8−LEADS JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 2X 5 A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 1 2 0.50 N/2 0.60 0.08 M C B S b A S 7 Top View b1 e1 With Plating e A See Detail “B” c1 0.10 C -H- A1 D 6 Seating Plane c Section “C-C” Scale: 100/1 (See Note 8) Base Metal -A- 3 See Detail “A” Side View 0.25 BSC C Parting Line 0.07 R. Min 2 Places Seating Plane ς A2 0.05 S C E1 -B- L 4 T -C- 3 0.95 End View Detail “A” (Scale: 30/1) N = 8L NOTES: 1. Die thickness allowable is 0.203"0.0127. 2. Dimensioning and tolerances per ANSI.Y14.5M-1994. 3. Dimensions “D” and “E1” do not include mold flash or protrusions, and are measured at Datum plane -H- , mold flash or protrusions shall not exceed 0.15 mm per side. 4. Dimension is the length of terminal for soldering to a substrate. 5. Terminal positions are shown for reference only. 6. Formed leads shall be planar with respect to one another within 0.10 mm at seating plane. 7. The lead width dimension does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the lead width dimension at maximum material condition. Dambar cannot be located on the lower radius or the lead foot. Minimum space between protrusions and an adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”. 8. Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip. 9. Controlling dimension: millimeters. 10. This part is compliant with JEDEC registration MO-187, variation AA and BA. 11. Datums -A- and -B- to be determined Datum plane -H- . MILLIMETERS Dim Min Nom Max A A1 A2 b b1 c c1 D E E1 e e1 L N T - - 1.10 0.05 0.10 0.15 0.75 0.85 0.95 0.25 - 0.38 8 0.25 0.30 0.33 8 0.13 - 0.23 0.15 0.18 0.13 3.00 BSC Note 3 4.90 BSC 2.90 3.00 3.10 3 0.70 4 0.65 BSC 1.95 BSC 0.40 0.55 8 0_ 4_ 5 6_ ECN: T-02080—Rev. C, 15-Jul-02 DWG: 5867 12. Exposed pad area in bottom side is the same as teh leadframe pad size. Document Number: 71244 12-Jul-02 www.vishay.com 1 Package Information Vishay Siliconix SOT−23 : 8−LEAD b e CL E1 CL E e1 D CL A CL A2 T A1 DATUM A - A- E1 C 0.10 L MILLIMETERS NOTES: 1. All dimensions are in millimeters. 2. Foot length measured at intercept point between Datum A and lead surface. 3. 4. 5. 2 0.20 - A- Package outline exclusive of mold flash and metal burr. Package outline inclusive of solder plating. No molding flash allowed on the top and bottom lead surface. Dim Min A A1 A2 b C D E E1 e e1 L T INCHES Nom Max Min Nom Max 0.90 1.27 1.45 0.00 0.0762 0.15 0.035 0.05 0.057 0.000 0.003 0.90 1.20 0.006 1.30 0.035 0.047 0.051 0.22 0.09 0.30 0.38 0.009 0.012 0.015 0.152 0.20 0.004 0.006 2.80 0.008 2.9 3.00 0.11 0.114 0.118 2.60 2.8 23.00 0.102 0.11 0.118 1.50 1.65 1.75 0.059 0.065 0.069 0.65 REF 0.026 REF 1.95 REF 0.077 REF 0.35 0.45 0.55 0.014 0.018 0.022 0_ 4_ 8_ 0_ 4_ 8_ ECN: C-03085—Rev. A, 07-Apr-03 DWG: 5895 Document Number: 72207 09-Apr-03 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1