DG9414, DG9415 Vishay Siliconix Single 4 x 1 and Dual 2 x 1 Multiplexers DESCRIPTION The DG9414, a single 4 to 1 multiplexer, and the DG9415, a dual 2 x 1 multiplexer, are monolithic CMOS analog devices designed for high performance low voltage operation. Combining low power, high speed, low on-resistance and small physical size, the DG9414 and DG9415 are ideal for portable and battery powered applications requiring high performance and efficient use of board space. Both the DG9414 and DG9415 are built on Vishay Siliconix’s low voltage BCD-15 process. Minimum ESD protection, per Method 3015.7, is 2000 V. An epitaxial layer prevents latchup. Break-before-make is guaranteed for DG9415. FEATURES • Low voltage operation (+ 2.7 V to + 12 V) • • • • • Low on-resistance - RDS(on): 14 Low power consumption TTL compatible ESD protection > 2000 V (method 3015.7) Available in TSSOP-10 (aka MSOP-10) • Compliant to RoHS Directive 2002/95/EC BENEFITS • High accuracy • Simple logic interface • Reduce board space APPLICATIONS • • • • • • Battery operated systems Portable test equipment Sample and hold circuits Cellular phones Communication systems Networking equipment FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG9415DQ DG9414DQ NO1 1 10 V+ COM1 2 9 COM2 NC1 3 8 NO2 A0 EN 4 7 NC2 A1 GND 5 6 A0 NO2 1 10 V+ NO3 2 9 COM NO1 3 8 NO0 EN 4 7 GND 5 6 Logic Logic EN A1 A0 On Switch EN A0 On Switch 1 X X None 1 X None 0 0 0 NO0 0 0 0 0 1 NO1 NC1 NC2 0 1 0 NO2 0 1 0 1 1 NO3 NO1 NO2 X = Do not care X = Do not care ORDERING INFORMATION Temp Range Package - 40 °C to 85 °C MSOP-10 Document Number: 71766 S11-0984-Rev. G, 23-May-11 Part Number DG9414DQ-T1-E3 DG9415DQ-T1-E3 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9414, DG9415 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Reference V+ to GND Limit - 0.3 to + 13 - 0.3 to (V+ + 0.3) ± 20 ± 40 > 2000 - 65 to 150 IN, COM, NC, NOa Continuous Current (Any terminal) Peak Current (Pulsed at 1 ms, 10 % duty cycle) ESD (Method 3015.7) Storage Temperature (D Suffix) Unit V mA V °C Notes: a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.4 V or 2.4 Ve Limits - 40 °C to 85 °C Temp.a Min.c Typ.b Max.c Unit VANALOG Full 0 RON Room Full 63 V+ 97 101 V Room 3 11 Room 14 33 Analog Switch Analog Signal Ranged On-Resistance RON Matchd RON Flatness RON RON Flatness d,f NO or NC Off Leakage Currentg COM Off Leakage Currentg Channel-On Leakage Currentg V+ = 2.7 V, VCOM = 1 V/1.5 V/2 V INO or INC = 5 mA Room Full -1 - 10 1 10 Room Full -1 - 10 1 10 ICOM(on) V+ = 3.3 V VCOM = VNO or VNC = 0.3 V/3 V Room Full -1 - 10 1 10 IINL or IINH VIN = 0 or V+ 1 INO/NC(off) ICOM(off) V+ = 3.3 , VNO or VNC = 0.3 V/3 V VCOM = 3 V/0.3 V nA Digital Control Input Currentg Full -1 d Input High Voltage VINH Full 1.6 Input Low Voltaged VINL Full Turn-On Time tON Room Full 102 125 142 Turn-Off Time tOFF Room Full 45 68 75 0.4 µA V Dynamic Characteristics Break-Before-Make Time VNO or VNC = 1.5 V tD Room 7 Transition Time ttrans VNO = 1.5 V/0 V, VNC = 0 V/1.5 V Room Full 81 Charge Injectiond QINJ CL = 1 nF, Vgen = 0 V, Rgen = 0 Room 3 Off-Isolation OIRR RL = 50 , CL = 5 pF, f = 1 MHz Room - 58 Channel-to-Channel Crosstalk (DG9415) XTALK RL = 50 , f = 1 MHz Room - 64 DG9414 Room 11 DG9415 Room 10 DG9414 Room 26 DG9415 Room 13 DG9414 Room 43 DG9415 Room 25 NO, NC Off Capacitance CNO(off), CNC(off) COM Off Capacitance CCOM(off) COM On Capacitance CCOM(on) f = 1 MHz ns 78 128 144 pC dB pF Power Supply Power Supply Range V+ Power Supply Currenth I+ www.vishay.com 2 2.7 V+ = 3.3 V, VIN = 0 V or 3.3 V Full 3.3 V 1 µA Document Number: 71766 S11-0984-Rev. G, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9414, DG9415 Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 5 V, ± 10 %, VIN = 0.8 V or 2.4 Ve Limits - 40 °C to 85 °C Temp.a Min.c Typ.b Max.c Unit VANALOG Full 0 V+ V RON Room Full 33 56 60 Room 2 10 Room 10 20 Analog Switch Analog Signal Ranged On-Resistance RON RON Match RON Flatnessf RON Flatness NO or NC Off Leakage Currentg INO/NC(off) V+ = 4.5 V, VCOM = 1.5 V/2.5 V/3.5 V INO or INC = 10 mA Room Full -1 - 10 1 10 Room Full -1 - 10 1 10 ICOM(on) V+ = 5.5 V VCOM = VNO or VNC = 1 V/4.5 V Room Full -1 - 10 1 10 IINL or IINH VIN = 0 or V+ Full -1 1 VINH Full 1.8 VINL Full Turn-On Timeh tON Room Full 56 77 86 Turn-Off Timeh tOFF Room Full 25 46 50 COM Off Leakage Currentg Channel-On Leakage Currentg ICOM(off) V+ = 5.5 V, VNO or VNC = 1 V/4.5 V VCOM = 4.5 V/1 V nA Digital Control Input Currenth Input High Voltage Input Low d Voltaged 0.6 µA V Dynamic Characteristics Break-Before-Make Timeth VNO or VNC = 3 V tD Room 7 Transition Time ttrans VNO = 3 V/ 0 V, VNC = 0 V/3 V Room Full 47 Off-Isolation OIRR RL = 50 , CL = 5 pF, f = 1 MHz Room - 58 Channel-to-Channel Crosstalk (DG9415) XTALK RL = 50 , f = 1 MHz Room - 64 QINJ CL = 1 nF, Vgen = 0 V, Rgen = 0 Charge Injectiond NO, NC Off Capacitance CNO(off), CNC(off) COM Off Capacitance CCOM(off) COM On Capacitance CCOM(on) f = 1 MHz ns 34 Room 6 DG9414 Room 11 DG9415 Room 10 DG9414 Room 25 DG9415 Room 13 DG9414 Room 42 DG9415 Room 24 77 84 dB pC pF Power Supply Power Supply Range Power Supply Current V+ h I+ 4.5 V+ = 5.5 V, VIN = 0 V or 5.5 V Full 5.5 V 1 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 12 V leakage testing, not production tested. h. Guaranteed by worst case test conditions and not subject to test. Document Number: 71766 S11-0984-Rev. G, 23-May-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9414, DG9415 Vishay Siliconix SPECIFICATIONS (V+ = 12 V) Parameter Symbol Test Conditions Unless Specified V+ = 12 V, VIN = 0.8 V or 2.4 Ve Limits - 40 °C to 85 °C Temp.a Min.c Typ.b Max.c Unit VANALOG Full 0 12 V RON Room 1 9 RON Flatness Room 1 10 Room Full 14 17 19 Analog Switch Analog Signal Ranged RON Match RON Flatnessd,f RON On-Resistance INO(off) INC(off) Switch Off Leakage Current ICOM(off) Channel On Leakage Current V+ = 10.8 V, INO, INC = 25 mA VCOM = 2/9 V VCOM = 1/11 V VNO, VNC = 11/1 V Room Full -1 - 10 1 10 Room Full -1 - 10 1 10 ICOM(on) VNO, VNC = VCOM = 11/1 V Room Full -1 - 10 1 10 IINL or IINH VIN = 0 or V+ Full -1 1 2.4 nA Digital Control Input Current d Input High Voltage VINH Full d VINL Full Input Low Voltage 0.8 µA V Dynamic Characteristics Turn-On Timeh tON Turn-Off Timeh tOFF Break-Before-Make Time Delayh Transition Time Charge Injectiond Off Isolation d Channel-to-Channel Crosstalkd RL = 300 , CL = 35 pF VNO, VNC = 5 V See Figure 2 Room Full 33 55 59 Room Full 17 40 41 ns tD DG419L Only, VNC, VNO = 5 V RL = 300 , CL = 35 pF Room ttrans VNO = 5 V/ 0 V, VNC = 0 V/ 5 V Room Full QINJ Vg = 0 V, Rg = 0 , CL = 1 nF Room 13 RL = 50 , CL = 5 pF f = 1 MHz Room - 58 Room - 64 OIRR XTALK NO, NC Off Capacitanced CNO(off), CNC(off) COM Off Capacitance CCOM(off) COM On Capacitanced CCOM(on) VIN = 0 or V+, f = 1 MHz 2 24 29 DG9414 Room 10 DG9415 Room 10 DG9414 Room 24 DG9415 Room 13 DG9414 Room 40 DG9415 Room 23 56 59 pC dB pF Power Supplies Positive Supply Current I+ VIN = 0 V or 12 V Full 1 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 12 V leakage testing, not production tested. h. Guaranteed by worst case test conditions and not subject to test. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 71766 S11-0984-Rev. G, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9414, DG9415 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 80 A = 85 °C B = 25 °C C = - 40 °C T = 25 °C 70 RON - On-Resistance () R ON - On-Resistance () 70 60 V+ = 3.0 V IS = 5 mA 50 40 V+ = 5.0 V IS = 10 mA 30 V+ = 12.0 V IS = 25 mA 20 10 60 V+ = 3.0 V IS = 5 mA 50 A 40 B C V+ = 12.0 V IS = 25 mA B A A 30 B C 20 10 0 C 0 0 3 6 12 9 0 2 4 VCOM - Analog Voltage (V) 6 8 10 12 VCOM - Analog Voltage (V) RON vs. VCOM and Supply Voltage RON vs. Analog Voltage and Temperature 10000 10 m VAX, V EN = 0 V 1m 100 I+ - Supply Current (nA) 1000 I+ - Supply Current (nA) V+ = 5.0 V IS = 10 mA V+ = 12.0 V V+ = 5.0 V 10 V+ = 12 V 100 µ 10 µ 1µ 100 n 10 n 1 - 60 - 40 - 20 0 20 40 60 80 1n 10 100 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Temperature (°C) Supply Current vs. Temperature Supply Current vs. Input Switching Frequency 1000 100 V+ = 12 V V+ = 12.0 V Leakage Current (pA) Leakage Current (pA) 60 100 ICOM(on) ICOM(off) INO(off), INC(off) 10 ICOM(off) 20 - 20 INO(off)/INC(off) ICOM(on) - 60 1 - 60 -100 - 40 - 20 0 20 40 60 80 Temperature (°C) Leakage Current vs. Temperature Document Number: 71766 S11-0984-Rev. G, 23-May-11 100 0 2 4 6 8 10 12 VCOM, VNO, VNC - Analog Voltage (V) Leakage vs. Analog Voltage www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9414, DG9415 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 120 tTRANS- V+ = 3 V 100 100 tTRANS- V+ = 3 V 80 tTRANS+ V+ = 3 V 80 tTRANS+ V+ = 3 V 60 60 tTRANS - V+ = 5 V tTRANS- V+ = 5 V tTRANS+ V+ = 5 V 40 tTRANS+ V+ = 5 V 40 tTRANS+ V+ = 12 V tTRANS+ V+ = 12 V tTRANS - V+ = 12 V 20 0 - 60 - 40 - 20 0 20 40 60 80 tTRANS- V+ = 12 V 20 0 - 60 100 - 40 - 20 0 Temperature (°C) Transistion Time vs. Temperature (DG9414) 40 60 80 100 Transistion Time vs. Temperature (DG9415) 140 10 120 100 80 60 Loss - 10 tON V+ = 3 V tON V+ = 5 V 40 tOFF V+ = 3 V tON V+ = 12 V Loss, OIRR, X TALK (dB) t ON , t OFF - Switching Time (ns) 20 Temperature (°C) - 50 XTALK OIRR V+ = 12 V RL - 70 tOFF V+ = 5 V 20 - 30 tOFF V+ = 12 V 0 - 60 - 90 - 40 - 20 0 20 40 60 80 100 100 k 1M Switching Time vs. Temperature 1G Insertion Loss, Off-Isolation Crosstalk vs. Frequency (DG9414) 10 3.0 Loss 2.5 VT - Switching Threshold (V) - 10 Loss, OIRR, X TALK (dB) 100 M 10 M Frequency (Hz) Temperature (°C) - 30 XTA LK OIRR - 50 V+ = 12 V RL - 70 - 90 100 k 2.0 1.5 1.0 0.5 0.0 1M 10 M 100 M Frequency (Hz) Insertion Loss, Off-Isolation Crosstalk vs. Frequency (DG9415) www.vishay.com 6 1G 2 4 6 8 10 12 14 V+ - Supply Voltage (V) Switching Threshold vs. Supply Voltage Document Number: 71766 S11-0984-Rev. G, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9414, DG9415 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 30 30 Q - Charge Injection (pC) Q - Charge Injection (pC) 50 V+ = 3 V 10 V+ = 5 V - 10 - 30 - 50 2 4 6 V+ = 5 V - 10 V+ = 12 V - 30 V+ = 12 V 0 V+ = 3 V 10 8 10 - 50 12 0 2 VCOM - Analog Voltage (V) Charge Injection vs. Analog Voltage (DG9414) 4 6 8 VCOM - Analog Voltage (V) 10 12 Charge Injection vs. Analog Voltage (DG9415) SCHEMATIC DIAGRAM (Typical Channel) V+ S VLevel Shift/ Drive VIN V+ D GND Figure 1. TEST CIRCUITS V+ Logic Input VINH tr < 5 ns tf < 5 ns 50 % VINL Switch Input VIN Switch Output V+ NO or NC COM tOFF VOUT VOUT IN RL 300 GND CL 35 pF CL (includes fixture and stray capacitance) VOUT = VIN RL 0.9 x VOUT 0V Switch Output Note: 90 % tON Logic input waveform is inverted for switches that have the opposite logic sense control RL + rON Figure 2. Switching Time Document Number: 71766 S11-0984-Rev. G, 23-May-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9414, DG9415 Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ VNO VNC tr < 5 ns tf < 5 ns VINL COM NO VINH VO NC RL 300 IN CL 35 pF VNC = VNO VO GND Switch Output 90 % 0V tD tD 50 % tr < 5 ns tf < 5 ns CL (includes fixture and stray capacitance) Figure 3. Break-Before-Make +15 V V+ NO or NC Logic VINH Input VINL COM VS1 VO NC or NO VS2 RL 300 IN tTRANS+ CL 35 pF tTRANS- VS1 V01 GND 90 % Switch Output CL (includes fixture and stray capacitance) VO = VS 10 % V02 VS2 RL RL + rON Figure 4. Transition Time VO V+ VO Rg V+ COM IN Vg NO or NC VO IN OFF CL 1 nF ON OFF Q = VO x CL GND IN dependent on switch configuration Input polarity determined by sense of switch. VIN = 0 - V+ Figure 5. Charge Injection www.vishay.com 8 Document Number: 71766 S11-0984-Rev. G, 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9414, DG9415 Vishay Siliconix TEST CIRCUITS V+ C V+ VS VIN NO or NC COM Rg = 50 50 IN 0 V or 2.4 V NC or NO VOUT GND XTALK Isolation = 20 log VOUT VIN C = RF bypass Figure 6. Crosstalk V+ C NO or NC COM Rg = 50 RL 50 IN 0 V, 2.4 V GND Off Isolation = 20 log C = RF Bypass VCOM VNO/NC Figure 7. Off Isolation V+ C V+ COM Meter IN 0 V, 2.4 V NO or NC GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz Figure 8. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71766. Document Number: 71766 S11-0984-Rev. G, 23-May-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix MSOP: 10−LEADS JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 2X 5 A B C 0.20 N N-1 0.60 0.48 Max Detail “B” (Scale: 30/1) Dambar Protrusion E 1 2 0.50 N/2 0.60 0.08 M C B S b A S 7 Top View b1 e1 With Plating e A See Detail “B” c1 0.10 C -H- A1 D 6 Seating Plane c Section “C-C” Scale: 100/1 (See Note 8) Base Metal -A- 3 See Detail “A” Side View 0.25 BSC C Parting Line 0.07 R. Min 2 Places C ς A2 Seating Plane 0.05 S E1 -B- L 4 T -C- 3 0.95 End View Detail “A” (Scale: 30/1) NOTES: 1. 2. Dimensioning and tolerances per ANSI.Y14.5M-1994. 3. Dimensions “D” and “E1” do not include mold flash or protrusions, and are measured at Datum plane -H- , mold flash or protrusions shall not exceed 0.15 mm per side. 4. Dimension is the length of terminal for soldering to a substrate. 5. Terminal positions are shown for reference only. 6. Formed leads shall be planar with respect to one another within 0.10 mm at seating plane. 7. N = 10L Die thickness allowable is 0.203"0.0127. The lead width dimension does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the lead width dimension at maximum material condition. Dambar cannot be located on the lower radius or the lead foot. Minimum space between protrusions and an adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”. 8. Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip. 9. Controlling dimension: millimeters. 10. This part is compliant with JEDEC registration MO-187, variation AA and BA. 11. Datums -A- and -B- to be determined Datum plane -H- . 12. Exposed pad area in bottom side is the same as teh leadframe pad size. Document Number: 71245 12-Jul-02 MILLIMETERS Dim Min Nom Max A A1 A2 b b1 c c1 D E E1 e e1 L N T - - 1.10 0.05 0.10 0.15 0.75 0.85 0.95 0.17 - 0.27 8 0.17 0.20 0.23 8 0.13 - 0.23 0.15 0.18 0.13 3.00 BSC Note 3 4.90 BSC 2.90 3.00 3.10 3 0.70 4 0.50 BSC 2.00 BSC 0.40 0.55 10 0_ 4_ 5 6_ ECN: T-02080—Rev. C, 15-Jul-02 DWG: 5867 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1