SGC4363Z SGC4363Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGC4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4363Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC4363Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50. Optimum Technology Matching® Applied Gain & Return Loss VD = 3V, ID = 54mA 30 GaAs HBT 20 Gain, RL (dB) InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT 10 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C 0 S22 -10 Si CMOS Single Fixed 3V Supply No Dropping Resistor Required Patented Self-Bias Circuitry P1dB =12.4dBm at 1950MHz OIP3 =26.5dBm at 1950MHz Robust 1000V ESD, Class 1C HBM Applications S21 GaAs MESFET -20 PA Driver Amplifier Cellular, PCS, GSM, UMTS, WCDMA IF Amplifier Wireless Data, Satellite S11 Si BJT -30 GaN HEMT 0 0.5 RF MEMS 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) Parameter Small Signal Gain, (G) Min. 15.6 11.2 17.1 12.7 11.8 13.3 11.4 24.5 Output Power at 1dB Compression (P1dB) Output Third Order Intercept Point (OIP3) Input Return Loss, (IRL) Output Return Loss, (ORL) Noise Figure (NF) Thermal Resistance (Junction - Lead) (Rth, j-l) Device Operating Voltage, (VD) Device Operating Current, (ID) Specification Typ. 9.5 8.5 48.0 Max. Condition dB dB dB dBm 850MHz 1950MHz 2400MHz 850MHz 12.4 11.8 28.5 dBm dBm dBm 1950MHz 2400MHz 850MHz 26.5 25.5 13.5 12.5 4.0 180 dBm dBm dB dB dB °C/W 1950MHz 2400MHz 1950MHz 1950MHz 1930MHz 3.0 54.0 18.6 14.2 Unit 5.0 60.0 V mA Test Conditions: VD =3V, ID =54mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, TL =25°C, ZS =ZL =50, Bias Tee Data RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS111011 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 6 SGC4363Z Absolute Maximum Ratings Parameter Rating Unit Device Current (ICE) 110 Device Voltage (VCE) 4 V RF Input Power* (See Note) 12 dBm +150 °C -40 to +85 °C +150 °C Junction Temp (TJ) Operating Temp Range (TL) Storage Temp ESD Rating - Human Body Model (HBM) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. mA The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Class 1C Moisture Sensitivity Level MSL 1 *Note: Load condition ZL =50 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l and TL =TLEAD Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tee) Parameter Unit 100 MHz 500 MHz 850 MHz 1950 MHz 2400 MHz 3500 MHz Small Signal Gain (G) Output Third Order Intercept Point (OIP3) dB dBm 18.0 33.5 17.7 30.5 17.1 28.5 12.7 26.5 11.8 25.5 9.4 22.5 Output Power at 1dB Compression (P1dB) Input Return Loss (IRL) Output Return Loss (ORL) Reverse Isolation (S12) dBm dB dB dB 14.9 26.5 25.0 20.0 14.0 21.5 21.0 21.0 13.3 18.5 17.5 21.5 12.4 13.5 12.5 20.0 11.8 14.0 12.0 19.5 10.0 12.0 11.0 19.0 3.5 4.0 4.2 5.1 Noise Figure (NF) dB 2.9 3.1 Test Conditions: VD =3V ID =54mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm TL =25°C ZS =ZL =50 Typical Performance with Bias Tee, VD =3V, ID =54mA OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing) P1dB vs. Frequency 17 36 34 15 P1dB (dBm) OIP3 (dBm) 32 30 28 26 25C 24 25C -40C 85C 85C 7 20 0 0.5 1 1.5 2 Frequency (GHz) 2 of 6 11 9 -40C 22 13 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111011 SGC4363Z Typical Performance with Bias Tee, VD = 3V, ID = 54mA NF vs. Frequency Current vs. Voltage 6.0 80 +25C 70 -40C 5.0 +85C 50 4.0 Id (mA) NF (dB) 60 3.0 40 30 25C 20 2.0 85C 10 1.0 0 0.5 1 1.5 2 2.5 3 0 3.5 0 0.5 1 1.5 Frequency (GHz) 0 24 -5 20 Gain (dB) -10 S11 (dB) 2.5 3 3.5 4 |S21| over Frequency |S11| over Frequency -15 -20 25C -40C -25 16 25C 12 -40C 85C 8 85C -30 4 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 Frequency (GHz) |S12| over Frequency -5 2.5 3 3.5 4 3 3.5 4 -5 -40C -10 S22 (dB) 85C -15 -20 -15 -20 25C -40C -25 -25 -30 0 0.5 1 1.5 2 2.5 Frequency (GHz) DS111011 2 |S22| over Frequency 0 25C -10 1.5 Frequency (GHz) 0 S12 (dB) 2 Vd (V) 3 3.5 4 85C -30 0 0.5 1 1.5 2 2.5 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 6 SGC4363Z SOT-363 PCB Pad Layout Dimensions in inches [millimeters] RF OUT RF IN Notes: 1. Provide a large ground pad area under device pins 1, 2, 4, and 5 with several plated-through holes placed as shown. 2. 1-2 ounce finished copper thickness is recommended. 3. RF I/O lines are 50Ω Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111011 SGC4363Z Application Schematic Vd Application Circuit Element Values 1uF 1000pF C3 L1 1,2 RF IN 3 C1 SGC-4363Z RF OUT 6 4,5 C2 Reference Designator 100-2000MHz 2000-4000MHz C1 1000pF 2.7pF C2 100pF 6.8pF C3 100pF 6.8pF L1 120nH 39nH Evaluation Board Layout 1uF 1000pF C3 L1 C1 DS111011 C2 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 6 SGC4363Z Part Identification Marking 6 5 4 1 2 3 Ordering Information 6 of 6 Ordering Code Description SGC4363Z 7” Reel with 3000 pieces SGC4363ZSQ Sample bag with 25 pieces SGC4363ZSR 7” Reel with 100 pieces SGC4363ZPCK1 100MHz to 2000MHz PCBA with 5-piece sample bag SGC4363ZPCK2 2000MHz to 4000MHz PCBA with 5-piece sample bag 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111011