SGC4363Z

SGC4363Z
SGC4363Z
50MHz to
4000MHz
Active Bias Silicon Germanium
Cascadable
Gain Block
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
Features
RFMD’s SGC4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4363Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4363Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.





Optimum Technology
Matching® Applied
Gain & Return Loss
VD = 3V, ID = 54mA
30
GaAs HBT
20

Gain, RL (dB)
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
10

Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
0

S22
-10

Si CMOS
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P1dB =12.4dBm at 1950MHz
OIP3 =26.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
S21
GaAs MESFET


-20
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
S11
Si BJT
-30
GaN HEMT
0
0.5
RF MEMS
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
Parameter
Small Signal Gain, (G)
Min.
15.6
11.2
17.1
12.7
11.8
13.3
11.4
24.5
Output Power at 1dB Compression
(P1dB)
Output Third Order Intercept Point
(OIP3)
Input Return Loss, (IRL)
Output Return Loss, (ORL)
Noise Figure (NF)
Thermal Resistance
(Junction - Lead) (Rth, j-l)
Device Operating Voltage, (VD)
Device Operating Current, (ID)
Specification
Typ.
9.5
8.5
48.0
Max.
Condition
dB
dB
dB
dBm
850MHz
1950MHz
2400MHz
850MHz
12.4
11.8
28.5
dBm
dBm
dBm
1950MHz
2400MHz
850MHz
26.5
25.5
13.5
12.5
4.0
180
dBm
dBm
dB
dB
dB
°C/W
1950MHz
2400MHz
1950MHz
1950MHz
1930MHz
3.0
54.0
18.6
14.2
Unit
5.0
60.0
V
mA
Test Conditions: VD =3V, ID =54mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, TL =25°C, ZS =ZL =50, Bias Tee Data
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 6
SGC4363Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ICE)
110
Device Voltage (VCE)
4
V
RF Input Power* (See Note)
12
dBm
+150
°C
-40 to +85
°C
+150
°C
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
ESD Rating - Human Body Model
(HBM)
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
mA
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Class 1C
Moisture Sensitivity Level
MSL 1
*Note: Load condition ZL =50
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD <(TJ -TL)/RTH, j-l and TL =TLEAD
Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tee)
Parameter
Unit
100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
3500
MHz
Small Signal Gain (G)
Output Third Order Intercept Point (OIP3)
dB
dBm
18.0
33.5
17.7
30.5
17.1
28.5
12.7
26.5
11.8
25.5
9.4
22.5
Output Power at 1dB Compression (P1dB)
Input Return Loss (IRL)
Output Return Loss (ORL)
Reverse Isolation (S12)
dBm
dB
dB
dB
14.9
26.5
25.0
20.0
14.0
21.5
21.0
21.0
13.3
18.5
17.5
21.5
12.4
13.5
12.5
20.0
11.8
14.0
12.0
19.5
10.0
12.0
11.0
19.0
3.5
4.0
4.2
5.1
Noise Figure (NF)
dB
2.9
3.1
Test Conditions: VD =3V ID =54mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm
TL =25°C ZS =ZL =50
Typical Performance with Bias Tee, VD =3V, ID =54mA
OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing)
P1dB vs. Frequency
17
36
34
15
P1dB (dBm)
OIP3 (dBm)
32
30
28
26
25C
24
25C
-40C
85C
85C
7
20
0
0.5
1
1.5
2
Frequency (GHz)
2 of 6
11
9
-40C
22
13
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS111011
SGC4363Z
Typical Performance with Bias Tee, VD = 3V, ID = 54mA
NF vs. Frequency
Current vs. Voltage
6.0
80
+25C
70
-40C
5.0
+85C
50
4.0
Id (mA)
NF (dB)
60
3.0
40
30
25C
20
2.0
85C
10
1.0
0
0.5
1
1.5
2
2.5
3
0
3.5
0
0.5
1
1.5
Frequency (GHz)
0
24
-5
20
Gain (dB)
-10
S11 (dB)
2.5
3
3.5
4
|S21| over Frequency
|S11| over Frequency
-15
-20
25C
-40C
-25
16
25C
12
-40C
85C
8
85C
-30
4
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
Frequency (GHz)
|S12| over Frequency
-5
2.5
3
3.5
4
3
3.5
4
-5
-40C
-10
S22 (dB)
85C
-15
-20
-15
-20
25C
-40C
-25
-25
-30
0
0.5
1
1.5
2
2.5
Frequency (GHz)
DS111011
2
|S22| over Frequency
0
25C
-10
1.5
Frequency (GHz)
0
S12 (dB)
2
Vd (V)
3
3.5
4
85C
-30
0
0.5
1
1.5
2
2.5
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 6
SGC4363Z
SOT-363 PCB Pad Layout
Dimensions in inches [millimeters]
RF
OUT
RF
IN
Notes:
1. Provide a large ground pad area under device pins 1,
2, 4, and 5 with several plated-through holes placed as
shown.
2. 1-2 ounce finished copper thickness is recommended.
3. RF I/O lines are 50Ω
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
4 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS111011
SGC4363Z
Application Schematic
Vd
Application Circuit Element Values
1uF
1000pF
C3
L1
1,2
RF IN
3
C1
SGC-4363Z
RF OUT
6
4,5
C2
Reference
Designator
100-2000MHz
2000-4000MHz
C1
1000pF
2.7pF
C2
100pF
6.8pF
C3
100pF
6.8pF
L1
120nH
39nH
Evaluation Board Layout
1uF
1000pF
C3
L1
C1
DS111011
C2
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 6
SGC4363Z
Part Identification Marking
6 5 4
1 2 3
Ordering Information
6 of 6
Ordering Code
Description
SGC4363Z
7” Reel with 3000 pieces
SGC4363ZSQ
Sample bag with 25 pieces
SGC4363ZSR
7” Reel with 100 pieces
SGC4363ZPCK1
100MHz to 2000MHz PCBA with 5-piece sample bag
SGC4363ZPCK2
2000MHz to 4000MHz PCBA with 5-piece sample bag
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS111011