SGA5589Z SGA5589ZDC to 4000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA5589Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain & Return Loss vs. Frequency GaAs HBT GaAs MESFET 32 0 -10 Si BiCMOS Gain (dB) ORL IRL 16 Si BJT -20 8 -30 Return Loss (dB) 24 Si CMOS GAIN SiGe BiCMOS GaAs pHEMT VD= 3.9 V, ID= 60 mA (Typ.) InGaP HBT High Gain: 20.8dB at 1950MHz Cascadable 50 Operates from Single Supply Low Thermal Resistance Package Applications Optimum Technology Matching® Applied SiGe HBT PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite GaN HEMT InP HBT 0 RF MEMS -40 0 1 2 LDMOS Parameter Small Signal Gain Min. 21.5 Output Power at 1dB Compression Output Third Intercept Point 3 4 Frequency (GHz) Specification Typ. 24.0 20.8 18.9 18.2 16.2 32.9 29.2 4000 5 Max. 26.5 6 Unit dB dB dB dBm dBm dBm dBm MHz Condition 850MHz 1950MHz 2400MHz 850MHz 1950MHz 850MHz 1950MHz >10dB Bandwidth Determined by Return Loss Input Return Loss 13.7 dB 1950MHz Output Return Loss 25.2 dB 1950MHz Noise Figure 3.4 dB 1950MHz Device Operating Voltage 3.5 3.9 4.3 V Device Operating Current 54 60 66 mA Thermal Resistance 97 °C/W (Junction - Lead) Test Conditions: VS =8V, ID =60mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS =68, TL =25°C, ZS =ZL =50 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS111014 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 6 SGA5589Z Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID) 120 mA Max Device Voltage (VD) 6 V +16 dBm +150 °C -40 to +85 °C Max Storage Temp +150 °C Moisture Sensitivity Level MSL 2 Max RF Input Power Max Junction Temp (TJ) Operating Temp Range (TL) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l Typical Performance at Key Operating Frequencies Parameter Unit 100 MHz 500 MHz 850 MHz 1950 MHz Small Signal Gain dB 25 24.7 23.8 20.3 Output Third Order Intercept Point dBm 31.6 32.9 29.2 Output Power at 1dB Compression dBm 17.9 18.2 16.2 Input Return Loss dB 18.9 17.5 15.7 13.7 Output Return Loss dB 17.2 16.7 15.7 13 Reverse Isolation dB 27.1 27.1 27.1 25.2 Noise Figure dB 2.8 3.0 3.4 Test Conditions: VS =8V, ID =60mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=68, TL =25°C, ZS =ZL =50 OIP3 vs. Frequency 3500 MHz 18.9 27.7 15.1 12.8 12.2 23.9 3.6 16 11.3 10.3 21 P1dB vs. Frequency VD= 3.9 V, ID= 60 mA VD= 3.9 V, ID= 60 mA 20 40 18 P1dB (dBm) 35 OIP3 (dBm) 2400 MHz 30 25 16 14 12 TL=+25ºC TL=+25ºC 10 20 0 0.5 1 1.5 2 Frequency (GHz) 2.5 0 3 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Noise Figure vs. Frequency VD=3.9V, ID= 60 mA Noise Figure (dB) 5 4 3 2 1 TL=+25ºC 0 0 2 of 6 0.5 1 1.5 2 Frequency (GHz) 2.5 3 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111014 |S21| vs. Frequency S11 vs. Frequency VD= 3.9 V, ID= 60 mA (Typ.) VD= 3.9 V, ID= 60 mA (Typ.) 32 0 24 -10 S11 (dB) S21 (dB) SGA5589Z 16 8 0 1 2 3 4 Frequency (GHz) 5 -40 6 0 S22 vs. Frequency -15 -10 -20 -30 2 3 4 Frequency (GHz) 5 +25°C -40°C +85°C TL -40 6 6 -20 -30 +25°C -40°C +85°C TL DS111014 5 VD= 3.9 V, ID= 60 mA (Typ.) 0 1 2 3 4 Frequency (GHz) S12 vs. Frequency -10 0 1 VD= 3.9 V, ID= 60 mA (Typ.) -25 +25°C -40°C +85°C TL S21 (dB) S12 (dB) 0 -30 +25°C -40°C +85°C TL -20 0 1 2 3 4 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 6 3 of 6 SGA5589Z Pin 1 2, 4 Function RF IN GND 3 RF OUT/BIAS Description RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Application Schematic Frequency (Mhz) VS R BIAS 1 uF 1000 pF Reference Designator 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH CD LC Recommended Bias Resistor Values for ID=60mA RBIAS=( VS-VD ) / ID 4 1 SGA5589Z 3 RF in CB 2 RF out CB Supply Voltage(VS) RBIAS 6V 36 8V 68 10 V 100 12 V 130 Note: RBIAS provides DC bias stability over temperature. Evaluation Board Layout Mounting Instructions: 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1 ounce copper on both sides. 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111014 SGA5589Z Suggested Pad Layout Preliminary Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. DS111014 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 6 SGA5589Z Part Identification Ordering Information Ordering Code 6 of 6 Description SGA5589Z 13” Reel with 3000 pieces SGA5589ZSQ Sample bag with 25 pieces SGA5589ZSR 7” Reel with 100 pieces SGA5589ZPCK1 850MHz, 8V Operation PCBA with 5-piece sample bag 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111014