SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Features VC1 VBIAS Active Bias RFOUT/ VC2 D SiGe BiCMOS GaAs pHEMT EW RFIN SiGe HBT VPC2 Si CMOS GaAs MESFET Si BiCMOS GaAs HBT InGaP HBT Applications IS-95 CDMA Systems Multi-Carrier Applications AMPS, ISM Applications N Si BJT High Linearity Performance +20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP +47dBm Typ. OIP3 High Gain: 33dB Typ. On-Chip Active Bias Control Patented high Reliability GaAs HBT Technology Surface-Mountable Plastic Package ES IG Optimum Technology Matching® Applied S RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. N Product Description GaN HEMT R RF MEMS Specification Typ. FO Parameter Min. 810 T Frequency of Operation Output Power at 1dB Compression Adjacent Channel Power 31.5 Device Voltage Thermal Resistance (Junction - Lead) Test Conditions: Z0 =50 4.75 N O Small Signal Gain Input VSWR Output Third Order Intercept Point Noise Figure Device Current 360 Temp=25°C 900 29.0 -55.0 Max. 960 Unit Condition -52.0 MHz dBm dBc 33.0 1.5:1 47.0 5.0 400 34.5 dB 425 dBm dB mA IBIAS =10mA, IC1 =70mA, IC2 =320mA 5.0 31 5.25 V °C/W TL =85°C IS-95 at 880MHz, ±885KHz offset, POUT =20.7dBm 880MHz Power out per tone=+14dBm VCC =5.0V RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS150909 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. (+1) 336-678-5570 [email protected] 1 of 7 SPA2118Z Absolute Maximum Ratings Parameter Rating Unit Max Supply Current (IC1) at VCC typ. 150 mA Max Supply Current (IC2) at VCC typ. 750 mA Max Device Voltage (VCC) at ICC typ. 6.0 V Max RF Input Power 10 dBm Max Junction Temp (TJ) +160 °C Max Storage Temp +150 °C 3 MSL Moisture Sensitivity Level Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. ES IG N S Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l 850MHz to 950MHz Application Circuit Data, ICC =400mA, VCC =5V, IS-95, 9 Channels Forward 880 MHz Adjacent Channel Power vs. Channel Output Power -40.0 -45.0 D -40C 25C 85C -50.0 -60.0 EW dBc -55.0 -65.0 -70.0 N -75.0 -85.0 12 13 14 15 16 17 18 Power 19 20(dBm) 21 22 Channel Output 23 24 25 dBm IS-95 CDMA at 880 MHz O T FO 11 R -80.0 N T=+25C +24 dBm +20 dBm +10 dBm +16 dBm 2 of 7 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS150909 SPA2118Z 850MHz to 950MHz Application Circuit Data, ICC =400mA, VCC =5V Input/Output Return Loss, Isolation vs Frequency 0 Gain vs. Frequency 40 T=+25°C S22 -10 -40C 25C 85C 36 S11 dB dB -20 32 -30 28 -40 S12 0.85 0.9 0.95 0.8 1 0.85 GHz 0.95 1 ES IG GHz P1dB vs Frequency Device Current vs. Source Voltage 36 600 -40C 25C 85C 500 D Device Current (mA) 34 25C -40C 85C 400 300 EW 32 dBm 0.9 N 0.8 S 24 -50 30 0.8 0.85 0.9 1 200 100 0 0 1 2 3 4 5 6 Vcc (V) N O T FO GHz 0.95 R 26 N 28 DS150909 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 7 SPA2118Z Pin 1 Function VC1 Description 2 3 4 VBIAS RF IN VPC2 5, 6, 7, 8 EPAD RF OUT/VC2 Bias control pin for the active bias network for the second stage. The recommended configuration is shown in the application schematic. RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin a DC-blocking capacitor should be used in most applications. (See application schematic.) The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. GND Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern. Supply voltage for the first stage transistor. The configuration as shown on the application schematic is required for optimum RF performance. Bias control pin for the active bias network. Recommended configuration is shown in the application schematic. RF input pin. This pin requires the use of an external DC-blocking capacitor as shown in the application shcematic. ACTIVE BIAS NETWORK 5-8 ES 1 IG 4 2 N 2 S Simplified Device Schematic D ACTIVE BIAS NETWORK Parameter ( EW 3 Recommended Land Pattern R N Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. FO 0.150 [3.81] Plated-Thru Holes (0.015" Dia, 0.030" Pitch) 0.140 [3.56] Machine Screws N O T 0.300 [7.62] 0.080 [2.03] 0.050 [1.27] 4 of 7 0.020 [0.51] 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS150909 SPA2118Z Package Drawing N O T FO R N EW D ES IG N S Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. DS150909 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 7 SPA2118Z 850MHz to 950MHz Application Schematic Vcc 10uF Tantalum External Connection 82pF IC2 Z=63 , 9.5° 1000pF 8 2 7 3 6 4 5 Z=50 33 nH , 15.1° S 6.8K 39pF 1 ES IG IBIAS N IC1 2.2nH 6.8pF 15pF 1200pF 330 Ohm D Vpc 100pF EW 850MHz to 950MHz Evaluation Board Layout and Bill of Materials Vcc N C3 R C4 L1 T C1 R1 FO C2 C5 L2 O C7 R2 N Value Part Number C1 15pF, 5% Rohm MCH18 series C2 82pF, 5% Rohm MCH18 series C3 10uF, 10% AVX TAJB106K020R C4 1000pF, 5% Rohm MCH18 series C5 39pF, 5% Rohm MCH18 series C6 1200pF, 5% Rohm MCH18 series C7 6.8pF, ±0.5pF Rohm MCH18 series C8 100pF, 5% Rohm MCH18 series L1 2.2nH, ±0.3nH Toko LL1608-FS series L2 33nH, 5% Coilcraft 1008HQ series R1 6.8K Ohm, 5% Rohm MCR03 series R2 330 Ohm, 5% Rohm MCR03 series 2012 C8 C6 Ref. Des. Sirenza Microdevices ECB-101161 Rev. C SOIC-8 PA Eval Board Vpc 6 of 7 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS150909 SPA2118Z ES IG N S Branding Diagram Ordering Information Description D Ordering Code 7” Reel with 500 pieces SPA2118ZSQ Sample bag with 25 pieces SPA2118ZSR 7” Reel with 100 pieces SPA2118Z-EVB1 900MHz PCBA N O T FO R N EW SPA2118Z DS150909 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 7