SPA-1218 Sirenza Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. 1960 MHz 1 Watt Power Amplifier with Active Bias This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. VCC AC P S 21 S11 NF Units Min. Frequency of Operation MHz 1930 Output Power at 1dB Compression [1,2] dB m 29.0 Adjacent Channel Power [1] IS-95 @1960MHz, ±885 KHz, POUT = 21.3 dBm dB c -55.0 -52.0 Small Signal Gain [1,2] dB 12.5 13.5 Input VSWR [1,2] Output Third Order Intercept Point Power out per tone = +14 dBm Noise Figure [1,2] Device Current V CC Device Voltage[1,2] 11.5 Typ. Max. 1990 - 1.5:1 dB m 48.0 dB 7.0 [2] [1,2] ICC Rth, j-l Applications • PCS Systems • Multi-Carrier Applications Parameters: Test Conditions: Z0 = 50 Ohms, VCC=5V, Temp = 25ºC N O T OIP3 FO R Input Match R EC O M M EN D ED P 1dB • Patented High Reliability GaAs HBT Technology • Surface-Mountable Plastic Package RFOUT/ VCC RFIN f0 N EW VBIAS Symbol Product Features • High Linearity Performance: +21.3 dBm IS-95 Channel Power at -55 dBc ACP +48 dBm OIP3 Typ. • On-chip Active Bias Control Active Bias N/C D ES IG N S Product Description Thermal Resistance (junction - lead) , TL=85ºC mA 275 310 330 V 4.75 5.0 5.25 ºC/W 35 [1] Optimal ACP tune [2] Optimal IP3 tune The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101428 Rev G Preliminary SPA-1218 1960 MHz 1 Watt Power Amp. 1960 MHz Application Circuit Data, ICC=320 mA, T=+25C, VCC=5V Note: Tuned for ACP 14 -5 0 13 -5 5 12 -6 0 11 10 -6 5 -40 C 85C 25C -7 0 14 16 18 20 22 25C 85C -4 0 C 9 8 1 .9 3 -7 5 24 1 .9 4 1 .9 5 N EW dBm D ES IG N S Gain vs. Frequency -4 5 dB dBc IS-95 @ 1.96 GHz Adj. Channel Pwr. vs. Channel Output Pwr. 1 .9 6 1 .9 7 1 .9 8 1 .9 9 GHz Input/Output Return Loss, Isolation vs. Frequency, T=25°° C P1dB vs. Frequency 0 FO R 32 -5 30 -1 0 24 22 20 1 .9 3 dB 26 S 11 -1 5 R EC O M M EN D ED dBm 28 25C 85C -4 0 C 1 .9 4 1 .9 5 1 .9 6 1 .9 7 1 .9 8 1 .9 9 S 12 -2 0 S 22 -2 5 -3 0 -3 5 -4 0 1 .9 3 1 .9 4 1 .9 5 GHz 1 .9 8 1 .9 9 GHz 25C -40C 400 Device Current (mA) 1 .9 7 Device Current vs. Source Voltage 450 N O T 1 .9 6 350 85C 300 250 200 150 100 50 0 0 1 2 3 4 5 Vcc (V) 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101428 Rev G SPA-1218 1960 MHz 1 Watt Power Amp. ACP Tune 1930-1990 MHz Schematic 10pF 10uF 1000pF 10pF 1 8 2 7 3 6 4 5 22 nH Z=50 Ω, 16.6° N EW 360 Ω D ES IG N S Vcc 22pF 2.2pF FO R 22pF 1930-1990 MHz Evaluation Board Layout R EC O M M EN D ED Vcc Ref. Des. Value Part Number C 1, C 7 22pF, 5% Rohm MCH18 series C3 C4 C5 C2 L1 10pF, 5% Rohm MCH18 series C3 10uF, 10% AVX TAJB106K020R C4 1000pF, 5% Rohm MCH18 series C5 10pF, 5% Rohm MCH18 series C6 2.2pF, ±0.25pF Rohm MCH18 series L1 22nH, 5% Toko LL1608-FS series R1 360 Ohm, 5% Rohm MCR03 series C7 R1 C1 C2 N O T C6 Sirenza Microdevices ECB-101161 Rev. C SOIC-8 PA Eval Board Vpc 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101428 Rev G Preliminary SPA-1218 1960 MHz 1 Watt Power Amp. V cc 2 V bi as 3 RF In 4 N/C RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. No connection RF Out/Vcc RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. Gnd 1 Vbias is the bias control pin for the active bias network. Device current is set by the current into this pin. Recommended configuration is shown in the Application Schematic. Bypassing in the appropriate location as shown on application schematic is required for optimum RF performance. 2 3 ACTIVE BIAS NETWORK 5-8 Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 7). R EC O M M EN D ED EPAD Device Schematic FO R 5, 6, 7, 8 Description VCC is the supply voltage for the active bias network. Bypassing in the appropriate location as shown on application schematic is required for optimum RF performance. D ES IG N S Function 1 N EW Pin # Absolute Maximum Ratings Parameter (Ta = 25ºC) Absolute Limit Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. N O T The Moisture Sensitivity Level rating for this device is level 1 (MSL-1) based on the JEDEC 22-A113 standard classification. No special moisture packaging/handling is required during storage, shipment, or installation of the devices. Max. Supply Current (ICC) at VCC typ. 750 mA Max. Device Voltage (VCC) at ICC typ. 6.0 V Max. RF Input Power 29 dB m Max. Junction Temp. (TJ) +160 ºC Max. Storage Temp. +150 ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: ICCVCC (max) < (TJ - TL)/Rth,j-l 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101428 Rev G SPA-1218 1960 MHz 1 Watt Power Amp. Part Number Ordering Information Part Number Devices Per Reel Reel Siz e SPA-1218 500 7" Package Outline Drawing (See SMDI MPO-101644 for tolerances, available on our website) 7 6 5 D ES IG N S 8 .194 [4.93] Lot ID SPA 1218 1 2 3 4 N EW .236 [5.994] .155 [3.937] Beveled Edge .045 [1.143] .035 [.889] BOTTOM VIEW .016 [.406] .061 [1.549] .058 [1.473] R EC O M M EN D ED .050 [1.27] FO R TOP VIEW EXPOSED PAD .013 [.33] x 45° .008 .008 [.203] .194 [4.928] .003 [.076] .155 [3.937] SEATING PLANE SEE DETAIL A SIDE VIEW PARTING LINE END VIEW Recommended Land Pattern 0.150 [3.81] Plated-Thru Holes (0.015" Dia, 0.030" Pitch) N O T .025 5° 0.140 [3.56] Machine Screws 0.300 [7.62] DETAIL A 0.080 [2.03] Note: DIMENSIONS ARE IN INCHES [MM] 0.050 [1.27] 303 S. Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 0.020 [0.51] http://www.sirenza.com EDS-101428 Rev G