SUF-1000 Cascadable pHEMT MMIC Amplifier DC to 20GHz RFMD’s SUF-1000 is a monolithically matched high IP3 broadband pHemt MMIC amplifier. The self-biased directcoupled topology provides exceptional cascadable performance from DC to 20GHz. Its efficient operation from a single 5V supply and its compact size (0.88mm x 0.75mm) make it ideal for high-density multi-chip module applications. It is well suited for wideband instrumentation and directconversion systems. Package: Die, 0.88mm x 0.75mm Features ■ Broadband Flat Gain = 10dB ■ P1dB = 14dBm ■ Direct-Coupled Topology ■ Efficient Single-Supply Operation: 5V, 45mA ■ Low Gain Variation versus Temperature ■ Compact Die Size (0.75mm x 0.88m) ■ Patented Self-Bias Darlington Applications RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® ■ Ultra-Broadband Communications ■ Test Instrumentation ■ Military and Space ■ LO and IF Mixer Applications ■ Replaces Traditional Dual-Supply Distributed Amplifiers DS140108 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 6 SUF-1000 Absolute Maximum Ratings Parameter Max Device Current (ID) Rating Unit 70 mA Max Device Voltage (VD) 4 V Max RF Input Power 20 dBm Max Dissipated Power 280 mW Max Junction Temperature (TJ) 150 °C Operating Temperature Range (TL) -40 to +85 °C Max Storage Temperature -65 to +150 °C Human Body Model Class 1A Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table below. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL)/RTH, j - l and TL = Backside of die. Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max Test Conditions: V = 5.0V RBIAS = 35Ω, ID = 46mA, OIP3 Tone Spacing = 1MHz, POUT per tone = 0dBmZS = ZL = 50Ω, 25°C, GSG Probe Data with Bias Tees General Performance 10.5 dB 2GHz and 6GHz 9.0 dB 16GHz 14.0 dBm 2GHz, 6GHz, and 16GHz 26.0 dBm 2GHz and 6GHz 25.5 dBm 16GHz 4.5 dB 2GHz and 6GHz 5.0 dB 16GHz -37.0 dB 2GHz -20.5 dB 6GHz -11.5 dB 16GHz -21.5 dB 2GHz -17.5 dB 6GHz -11.0 dB 16GHz -21.0 dB 2GHz 17.5 dB 6GHz -17.0 dB 16GHz 3.4 V Small Signal Gain Output Power at 1dB Compression Output Third Order Intercept Point Noise Figure Input Return Loss Output Return Loss Reverse Isolation Device Operating Voltage RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140108 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 6 SUF-1000 Specification Parameter Unit Min Typ Condition Max General Performance Test Conditions: V = 5.0V RBIAS = 35Ω, ID = 46mA, OIP3 Tone Spacing = 1MHz, POUT per tone = 0dBmZS = ZL = 50Ω, 25°C, GSG Probe Data with Bias Tees Device Operating Current 46 mA Gain Variation vs. Temperature -0.01 dB/°C Thermal Resistance (junction to backside) 262 °C/W Typical Performance (GSG Probe Data) Frequency (GHz) VD (V) Current (mA) Gain (dB) 0.10 3.4 46.0 0.50 3.4 0.85 P1dB (dBm) S11 (dB) S22 (dB) 10.4 -34.0 -21.0 46.0 10.4 -36.0 -22.0 3.4 46.0 10.4 13.0 24.5 -37.0 -22.0 4.4 2.00 3.4 46.0 10.4 14.0 26.0 -34.0 -21.0 4.4 4.00 3.4 46.0 10.5 13.5 26.0 -26.0 -19.0 4.4 6.00 3.4 46.0 10.5 14.0 26.0 -20.0 -17.0 4.6 10.00 3.4 46.0 10.3 14.0 25.0 -14.0 -14.0 4.7 16.00 3.4 46.0 9.0 14.0 25.5 -12.0 -11.0 5.1 20.00 3.4 46.0 7.6 -13.0 -10.0 5.1 OIP3 (dBm) NF (dB) Test Conditions: GSG Probe Data With Bias Tees, RBIAS = 35Ω OIP3 Tone Spacing = 1MHz, POUT per tone = 0dBm, 25°C Typical Performance RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140108 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 6 SUF-1000 Typical Performance (Continued) Current Variation Versus Temperature RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140108 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 6 SUF-1000 Pad Description (Dimensions in inches [millimeters]) Notes: 1. 2. 3. 4. 5. 6. No connection required for unlabeled bond pads Die thickness is 0.004 [0.10] Typical bond pad is 0.004 [0.10] square Backside metallization: Gold Backside is ground Bond pad metallization: Gold Pin Names and Descriptions Pin Name Description 1 RFIN This pad is DC coupled and matched to 50Ω. An external DC block is required. 2 RFOUT/BIAS This pad is DC coupled and matched to 50Ω. Bias is applied through this pad. Die Bottom GND Die bottom must be connected to RF/DC ground using silver-filled epoxy. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140108 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 6 SUF-1000 Device Assembly RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140108 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 6