Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” (91.4 cm) Low profile package 24” (61.0 cm) wire leads Description: The OPB100 series consists of an infrared LED (OPB100EZ) and phototransistor (OPB100SZ) in separate plastic housings. The low cost, snap-in design requires no screws or other mounting hardware for ease of installation. The emitter and sensor are not apertured, which allows separation distances in excess of 36” (91.4 cm) without concern for precise alignment. The front side clip allows mounting of the product to any 0.062” (1.57 mm) thick material. This product is designed for general switching and low-speed data communications applications. Applications: • • • • • Ordering Information Non-contact reflective object Non-contact interruptive sensing Assembly line automation Machine automation Machine safety Part Number LED Peak Wavelength Sensor Lead Length / Spacing 880 nm Transistor 24" / 26 AWG Wire OPB100Z OPB100-EZ OPB100-SZ Emitter (LED) Phototransistor Color/Pin Description Red-1 Anode Black-2 Cathode White-3 Collector Green-4 Emitter Red White SNAP BODY Symbolize Cover RoHS 26 AWG UL Rated Black Green OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Issue A.2 05/06 Page 1 of 3 Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage Temperature Range -40o C to +85o C Operating Temperature Range(1) -40o C to +80o C Input LED (OP298 for additional information) Forward DC Current 100 mA Peak Forward Current (1 µs pulse width, 300 pps) 1A Reverse DC Voltage 2V Power Dissipation (2) 142 mW Output Phototransistor (OP598 for additional information) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5V Collector DC Current Power Dissipation 50 mA (3) 250 mW Electrical Characteristics (TA = 25°C unless otherwise noted — for reference only) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP298 for additional information — for reference only) VF Forward Voltage - - 1.7 V IF = 20 mA IR Reverse Current - - 15 µA VR= 10 V Emission Angle at Half Power Points - 25 - Degree 6.5 - - IF = 100 mA mW/cm2 Distance = 1.43” (3.63 cm) Aperture = 0.25” (6.35 mm) qHP EE (APT) Apertured Radiant Intensity IF = 20 mA Output Phototransistor (See OP598 for additional information — for reference only) V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V IC = 1 mA, EE = 0mw/cm2 (no light) V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IC = 100 µA, EE = 0mw/cm2 (no light) Collector Dark Current - - 100 nA VCE = 10V, IF = 0, EE = 0 mw/cm2 (no light) Collector-Emitter Saturation Voltage - - 0.4 V IC = 400 µA, EE = 1.7 mw/cm2 On-State Collector Current 5 - - mA ICEO VCE(SAT) IC(ON) VCE = 5 V, EE = 1.7 mw/cm2 Notes: 1. Derate linearly 3.33 mW/°C above 25°C. 2. All parameters measured using pulse technique. 3. Derate linearly 1.43 mW/°C above 25°C. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.2 05/01 Page 2 of 3 OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Output Current vs. Distance 100 IF=20 mA Typical Output Current (mA) IF=50 mA 10 1 0.1 0.01 1 2 3 4 5 6 7 8 9 10 11 12 Distance (inches) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 [email protected] www.optekinc.com Issue A.2 05/06 Page 3 of 3