Types OP800SL thru OP805SL Electrical Characteristics (TA= 25' C unless otherwise noted) I c ( o ~ ) On-State Collector Current I 1 1 I 0.5 0.5 OP800SL OP801SL TEST CONDITIONS 1 3.0 mA mA 100 nA VCE=IOV,E~=O Collector Dark Current ICEO I MIN TYP MAX UNITS PARAMETER SYMBOL V(BR)CEO Collector-Emitter Breakdown Voltage 30 V. lc=100pA V(BR)CBO Collector-Base Breakdown Voltage 30 V lc=100pA V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 V I~=100pA I V(BR)EBO Emitter-Base Breakdown Voltage 5.0 V I~=100pA I V Ic = 0.4 mA, Ee = 5 m ~ / c m ~ ( ~ ) ps ps Vcc = 5 V, Ic = 0.80 mA, RL = I 0 0 R, See Test Circuit 0.40 VCE(SAT) Collector-Emitter Saturation Voltage 1 tr tf Rise Time Fall Time I Typical Performance Curves Collector Current vs. lrradiance Normalized Collector Current vs. Ambient Temperature Collector Dark Current vs. Ambient Temperature I - VCE 5.0 V - LIGHT SOURCE IS UNFILTEREDTUNGSTEN AT 2870°K VCE= IOV - / / I 0 20 TA 40 60 80 100 - AMBIENT TEMPERATURE - 120 C' 140 -50 -25 0 25 50 75 TA AMBIENT TEMPERATURE - - -- v -1v - VRL FREOUENCY - 100 Hz 5 TEST CONOITIONS: ' X 890 nm .IF 100 mA VCE 5 V . LENS TO LENS , DISTANCE 6' - -- 100 125 PULSE WIDTH 1 ms -LED OP290C X 890 ,nm - - - 10,000 J * 45 ' 4 \ I 8 12 IRRAOIANCE 16 20 - mW cm' ... - f - Light source IS a pulsed gallam arsen~deLEO w~tha h e less .an 500 ns. LEO oulput IS adlusled u n l ~ l c 0.8 mA. L I 30 15 0 15 9 ANGULAR DISPLACEMENT - - Switching Time Test Circuit \I 2.000 6.000 RL LOAD RESISTANCE - Ohms 4 E, \I 0 0 Normalized Collector Current vs. Angular Displacement Rise and Fall Time vs. Load Resistance vcc - C' R~ - J - 30 Oeg. 45 Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 24