HS54095 Silicon N Channel MOS FET High Speed Power Switching REJ03G1668-0100 Rev.1.00 Apr 24, 2008 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) D 1. Gate 2. Drain 3. Source G 32 1 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% REJ03G1668-0100 Rev.1.00 Apr 24, 2008 Page 1 of 3 Symbol VDSS VGSS ID Note1 ID (pulse) IDR Note1 IDR (pulse) Pch θch-a Tch Tstg Ratings 600 ±30 0.2 0.8 0.2 0.8 0.75 166.7 150 –55 to +150 Unit V V A A A A W °C/W °C °C HS54095 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 600 — — 3 — Typ — — — — 13.5 Max — 1 ±0.1 5 16.5 Unit V µA µA V Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF — — — — — — — — — — — 66 8.7 1.3 30 15 51 175 4.8 0.6 3.2 0.77 — — — — — — — — — — 1.30 pF pF pF ns ns ns ns nC nC nC V trr — 220 — ns Body-drain diode reverse recovery time Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 0.1 A, VGS = 10 V Note2 VDS = 25 V VGS = 0 f = 1 MHz ID = 0.1 A VGS = 10 V RL = 3000 Ω Rg = 10 Ω VDD = 480 V VGS = 10 V ID = 0.2 A IF = 0.2 A, VGS = 0 Note2 IF = 0.2 A, VGS = 0 diF/dt = 50 A/µs Notes: 2. Pulse test 3. Since this device is equipped with high voltage FET chip (VDSS ≥ 600 V), high voltage may be supplied. Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal. REJ03G1668-0100 Rev.1.00 Apr 24, 2008 Page 2 of 3 HS54095 Package Dimensions Package Name TO-92(1) JEITA Package Code SC-43A Previous Code TO-92(1) / TO-92(1)V RENESAS Code PRSS0003DA-A 4.8 ± 0.3 MASS[Typ.] 0.25g Unit: mm 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Since HS54095 is equipped with high voltage FET chip (VDSS ≥ 600 V), high voltage may be supplied. Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal. Ordering Information Part No. HS54095TZ-E Quantity 2500 pcs REJ03G1668-0100 Rev.1.00 Apr 24, 2008 Page 3 of 3 Shipping Container Hold Box, Radial Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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