RJK6025DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1870-0100 Rev.1.00 Dec 08, 2009 Features • Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1 1. Gate 2. Drain 3. Source 4. Drain G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C REJ03G1870-0100 Rev.1.00 Dec 08, 2009 Page 1 of 3 Symbol VDSS VGSS ID Note1 ID (pulse) IDR Note1 IDR (pulse) Pch Note2 θch-c Tch Tstg Ratings 600 ±30 0.8 1.2 0.8 1.2 25 5 150 –55 to +150 Unit V V A A A A W °C/W °C °C RJK6025DPE Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 600 — — 3 — Typ — — — — 13.0 Max — 1 ±0.1 5 17.5 Unit V μA μA V Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF — — — — — — — — — — — 71.5 10.5 1.5 31 15 44 44 5.0 0.7 3.3 0.86 — — — — — — — — — — 1.45 pF pF pF ns ns ns ns nC nC nC V trr — 157 — ns Body-drain diode reverse recovery time Notes: 3. Pulse test 4. This device is sensitive to electrostatic discharge. It is recommended to adopt appropriate cautions when handling this product. REJ03G1870-0100 Rev.1.00 Dec 08, 2009 Page 2 of 3 Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID =0.4 A, VGS = 10 V Note3 VDS = 25 V VGS = 0 f = 1 MHz ID = 0.4 A VGS = 10 V RL = 750 Ω Rg = 10 Ω VDD = 480 V VGS = 10 V ID = 0.8 A IF = 0.8 A, VGS = 0 Note3 IF = 0.8 A, VGS = 0 diF/dt = 100 A/μs RJK6025DPE Package Dimensions JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g (1.4) 4.44 ± 0.2 7.8 6.6 (1.5) 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 + 0.3 – 0.5 1.3 ± 0.15 10.0 (1.5) 8.6 ± 0.3 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Ordering Information Part No. RJK6025DPE-00-J3 Quantity 1000 pcs REJ03G1870-0100 Rev.1.00 Dec 08, 2009 Page 3 of 3 Shipping Container Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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