RENESAS RJK6025DPE

RJK6025DPE
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1870-0100
Rev.1.00
Dec 08, 2009
Features
• Low on-resistance
RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
D
4
1
1. Gate
2. Drain
3. Source
4. Drain
G
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
REJ03G1870-0100 Rev.1.00 Dec 08, 2009
Page 1 of 3
Symbol
VDSS
VGSS
ID
Note1
ID (pulse)
IDR
Note1
IDR (pulse)
Pch Note2
θch-c
Tch
Tstg
Ratings
600
±30
0.8
1.2
0.8
1.2
25
5
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
RJK6025DPE
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
600
—
—
3
—
Typ
—
—
—
—
13.0
Max
—
1
±0.1
5
17.5
Unit
V
μA
μA
V
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
—
—
—
—
—
—
—
—
—
—
—
71.5
10.5
1.5
31
15
44
44
5.0
0.7
3.3
0.86
—
—
—
—
—
—
—
—
—
—
1.45
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
trr
—
157
—
ns
Body-drain diode reverse recovery time
Notes: 3. Pulse test
4. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
REJ03G1870-0100 Rev.1.00 Dec 08, 2009
Page 2 of 3
Test conditions
ID = 10 mA, VGS = 0
VDS = 600 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID =0.4 A, VGS = 10 V Note3
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 0.4 A
VGS = 10 V
RL = 750 Ω
Rg = 10 Ω
VDD = 480 V
VGS = 10 V
ID = 0.8 A
IF = 0.8 A, VGS = 0 Note3
IF = 0.8 A, VGS = 0
diF/dt = 100 A/μs
RJK6025DPE
Package Dimensions
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.]
1.30g
(1.4)
4.44 ± 0.2
7.8
6.6
(1.5)
2.49 ± 0.2
0.2
0.1 +– 0.1
7.8
7.0
+ 0.3
– 0.5
1.3 ± 0.15
10.0
(1.5)
8.6 ± 0.3
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(1)
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
1.3 ± 0.2
Ordering Information
Part No.
RJK6025DPE-00-J3
Quantity
1000 pcs
REJ03G1870-0100 Rev.1.00 Dec 08, 2009
Page 3 of 3
Shipping Container
Taping
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