Preliminary Datasheet RJH60M7DPQ-A0 600 V - 50 A - IGBT Application: Inverter R07DS0538EJ0100 Rev.1.00 Sep 02, 2011 Features Short circuit withstand time (8 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 E 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 600 ±30 90 50 200 50 200 300 0.42 1.07 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0538EJ0100 Rev.1.00 Sep 02, 2011 Page 1 of 3 RJH60M7DPQ-A0 Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol ICES / IR Min — Typ — Max 5 Unit A IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf tsc — 5 — — — — — — — — — — — — 6 — — 1.6 1.9 3150 180 95 125 25 50 60 50 180 80 8 ±1 7 2.1 — — — — — — — — — — — — A V V V pF pF pF nC nC nC ns ns ns ns s VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 50 A, VGE = 15 V Note3 IC = 90 A, VGE = 15 V Note3 FRD forward voltage VF trr 1.4 100 2.0 — V ns IF = 50 A Note3 FRD reverse recovery time — — Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Short circuit withstand time Test Conditions VCE = 600 V, VGE = 0 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 50 A VCC = 300 V, VGE = 15 V IC = 50 A Rg = 5 (Inductive load) Tc = 100 C VCC 360 V, VGE = 15 V IF = 50 A diF/dt = 100 A/s Notes: 3. Pulse test R07DS0538EJ0100 Rev.1.00 Sep 02, 2011 Page 2 of 3 RJH60M7DPQ-A0 Preliminary Package Dimension JEITA Package Code RENESAS Code PRSS0003ZH-A Previous Code MASS[Typ.] 6.14g Unit: mm 3.60 ± 0.1 5.02 ± 0.19 15.94 ± 0.19 17.63 4.5 max 20.19 ± 0.38 21.13 ± 0.33 6.15 Package Name TO-247A 5.45 0.1 2.10 +– 0.2 13.26 1.27 ± 0.13 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part Number RJH60M7DPQ-A0-T0 R07DS0538EJ0100 Rev.1.00 Sep 02, 2011 Quantity 240 pcs Shipping Container Box (Tube) Page 3 of 3 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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