SHF1100 - SHF1150 Series SHF1150 Axial Leaded SHF1150SMS Surface Mount Square Tab A Novel 1 amp Void Free Glass Ceramic Nanosize Package 9 nsec Hyper Fast Soft Recovery Nanospeed Rectifier SSDI announces our latest technological advancement, the SHF1150. The SHF1150 is a void free glass ceramic encapsulated rectifier that provides a more rugged, high reliability replacement for a 1N6642 and a smaller, faster replacement for the 1N5806. Features ▪▪ Hyper fast recovery time (soft recovery / low EMI): 9 nsec max ▪▪ Low reverse leakage current ▪▪ Low forward voltage drop ▪▪ Hermetically sealed in a glass ceramic void free construction in a DO-35 package envelope ▪▪ High temperature metallurgical category I bond ▪▪ Solid silver leads (copper leads also available) ▪▪ Excellent liquid-to-liquid thermal shock performance ▪▪ Designed for high efficiency applications ▪▪ Radiation tolerant ▪▪ Avalanche breakdown ▪▪ Replacement for 1N6638, 1N6643 and 1N5806 ▪▪ Available in axial leaded and surface mount square tab versions ▪▪ Available in single phase, three phase and diode array configurations ▪▪ TX, TXV, and S-level screening available ▪▪ Samples available on request IO @25°C IFSM @ 8.3mS, 25°C RθJL @.375”, 25°C RθJE @25°C 1N6642 SHF1150 1N5806 0.3 A 1.0 A 2.5 A 2.5 A 20 A 35 A 150°C/W 80°C/W 36°C/W 40°C/W 20°C/W 13°C/W @100µA, 25°C 100 V min 160 V min 160 V min @20V, 25°C 25 nA max 50 nA max -- IR @75V, 25°C 500 nA max 75 nA max -- IR @150V, 25°C -- 150 nA max 1.0 µA max VF @1mA, 25°C -- 0.575 V max -- VF @10mA, 25°C 0.8 V max 0.7 V max -- VF @100mA, 25°C 1.00 V max 0.8 V max -- VF @200mA, 25°C -- 0.85 V max -- VF @500mA, 25°C -- 0.90 V max -- VF @1.0A, 25°C -- 0.975 V max 0.875 V max IR @20V, 150°C 50 µA max 50 µA max -- IR @75V, 150°C 100 µA max 75 µA max -- BVR IR IR @150V, 150°C -- 150 µA max 175 µA @ 125°C VF @10mA, 150°C 0.8 V max 0.5 V max -- VF @100ma, 150°C -- 0.62 V max -- VF @10mA, -55°C -- 0.81 V max -- VF @100mA, -55°C 1.2 V max 0.92 V max -- Solid State Devices, Inc. ▪ 14701 Firestone Blvd. La Mirada, CA 90638 ▪ (562) 404-4474 ▪ FAX (562) 404-1773 ▪ www.ssdi-power.com SHF1100 - SHF1150 Series CASE OUTLINES D B ØA ØC D AXIAL DIM MIN MAX A .056” .075” B .125” .140” C .018” .022” D 1.00” 1.50” A B A D C SMS DIM MIN MAX A .070” .085” B .168” .200” C .019” .028” D .001” -- Solid State Devices, Inc. ▪ 14701 Firestone Blvd. La Mirada, CA 90638 ▪ (562) 404-4474 ▪ FAX (562) 404-1773 ▪ www.ssdi-power.com SHF1100 thru SHF1150 SERIES Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 AMP 100 – 150 VOLTS 9 nsec HYPER FAST SOFT RECOVERY RECTIFIER Designer’s Data Sheet Part Number/Ordering Information 1/ SHF1 ____ __ __ │ │ └ Screening 2/ │ │ __ = Not Screened │ │ TX = TX Level │ │ TXV = TXV │ │ S = S Level │ │ │ └ Package Type __ = Axial Leaded │ SMS = Surface Mount Square Tab │ │ └ Device Type ( VRWM ) 100 = 100 V 150 = 150 V FEATURES: Hyper Fast Reverse Recovery Time 9 ns Max Low Forward Voltage Drop Low Reverse Leakage Current Avalanche Breakdown Void Free Glass Ceramic Chip Construction Hermetically Sealed Solid Silver Lead Excellent liquid-to-liquid thermal shock performance Available in Axial & Square Tab Versions For High Efficiency Applications TX, TXV, and S-Level Screening Available2/ Replacement for 1N6638, 1N6642 and 1N5806 High Temperature Metallurgical Class I Bond MAXIMUM RATINGS 3/ RATING Peak Repetitive Reverse Voltage DC Blocking Voltage SHF1100 SHF1150 Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TC = 25°C) Peak Surge Current (8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TC = 25°C) Operating & Storage Temperature Thermal Resistance SMS- Junction to End Tab Axial- Junction to Lead @ .375” SYMBOL VALUE UNIT VRWM VR 100 150 Volts IO 1 Amp IFSM 20 Amps TOP and TSTG -65 to +175 °C RθJE RθJL 20 80 °C/W Axial Leaded NOTES: SMS 1/ For Ordering Information, Price, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0158A DOC SHF1100 thru SHF1150 SERIES Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS 3/ CHARACTERISTICS SYMBOL LIMIT UNIT Maximum Instantaneous Forward Voltage Drop (Pulsed, TA = 25°C) @ IF = 1mA @ IF = 10mA @ IF = 100mA @ IF = 200mA @ IF = 500mA @ IF = 1A VF1 VF2 VF3 VF4 VF5 VF6 0.575 0.700 0.800 0.850 0.900 0.975 Vdc Maximum Instantaneous Forward Voltage Drop (Pulsed, TA = 150°C) @ IF = 10mA @ IF = 100mA VF7 VF8 0.5 0.62 Vdc Maximum Instantaneous Forward Voltage Drop (Pulsed, TA = -55°C) @ IF = 10mA @ IF = 100mA VF9 VF10 0.81 0.92 Vdc BVR 100 Vdc Minimum Breakdown Voltage Ir = 100 μA Maximum Reverse Leakage Current (300 μs Pulse Minimum , TA = 25°C) @ VR = 20V @ VR = 75V @ VR = max rated IR1 IR2 IR3 50 75 150 nA Maximum Reverse Leakage Current (300 μs Pulse Minimum , TA = 150°C) @ VR = 20V @ VR = 75V @ VR = max rated IR4 IR5 IR6 50 75 150 µA Maximum Junction Capacitance (TA = 25°C , f = 1MHz) VR = 0V CJ1 14 pf Maximum Junction Capacitance (TA = 25°C , f = 1MHz) VR = 1.5V CJ2 10 pf Maximum Junction Capacitance (TA = 25°C , f = 1MHz) VR = 10V CJ3 6 pf Maximum Reverse Recovery Time (IF = 50 mA, IR = 100 mA, IRR = 25 mA) trr 9 nsec Maximum Forward Recovery Time (IF = 50 mA) Tfr 18 nsec SMS AXIAL DIM A B C D MIN .056” .125” .018” 1.00” MAX .075” .140” .022” 1.50” NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DIM A B C D DATA SHEET #: RC0158A MIN .070” .168” .019” .001” MAX .085” .200” .028” -- DOC