REVERSE RECOVERY IN 5 nsec FLAT 1N8021 - 1N8023 SERIES 1 Amp ▪ 100 - 200 Volts ▪ 5 nsec ▪ Hyper Fast Recovery Rectifier Solid State Devices, Inc. (SSDI) announces the fastest, most rugged rectifier diodes on the market, the 1N8021 - 1N8023 Series. These diodes are more reliable than the 1N6642 while matching its reverse recovery. They are also a smaller and faster replacement for the 1N5806. The 1N8021 - 1N8023 series is the perfect combination of high performance and high reliability in a small, lightweight package. Features: ▪▪ Low forward voltage drop ▪▪ Low reverse leakage current ▪▪ Avalanche breakdown ▪▪ Hermetically sealed ▪▪ Solid silver leads ▪▪ For high efficiency applications ▪▪ Void free glass ceramic chip construction ▪▪ Excellent liquid-to-liquid thermal shock performance Solid State Devices, Inc. ISO 9001:2008 and AS9100:2004 Rev. B (562) 404-4474 ▪ www.ssdi-power.com ▪▪ Available in axial & square tab versions ▪▪ TX, TXV, and S-level screening available. ▪▪ Replacement for 1N6638, 1N6642 and 1N5806 ▪▪ Previous part numbers: SHF1101, SHF1151, and SHF1201 ▪▪ High temperature metallurgical class I bond Contact us today for more information about this product or any of SSDI’s broad range of high reliability products and services. 1N8021 thru 1N8023 SERIES Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 AMP 100 – 200 VOLTS 5 nsec HYPER FAST RECOVERY RECTIFIER Designer’s Data Sheet Part Number/Ordering Information 1/ 1N802 __ __ __ │ │ └ Screening 2/ │ │ __ = Not Screened │ │ TX = TX Level │ │ TXV = TXV Level │ │ S = S Level │ │ │ └ Package Type __ = Axial Leaded │ SMS = Surface Mount Square Tab │ │ └ Device Type ( VRWM ) 1 = 100 V 2 = 150 V 3 = 200 V FEATURES: Hyper fast reverse recovery time: 5 ns Max Low forward voltage drop Low reverse leakage current Avalanche breakdown Void free glass ceramic chip construction Hermetically sealed Solid silver leads Excellent liquid-to-liquid thermal shock performance Available in axial & square tab versions For high efficiency applications TX, TXV, and S-Level screening available2/ Replacement for 1N6638, 1N6642 and 1N5806 Previous part numbers: SHF1101, SHF1151, and SHF1201 High temperature metallurgical class I bond MAXIMUM RATINGS 3/ RATING Peak Repetitive Reverse Voltage DC Blocking Voltage 1N8021 1N8022 1N8023 Average Rectified Forward Current (Resistive load, 60 Hz, sine wave, TC = 25°C) SYMBOL VALUE UNIT VRWM VR 100 150 200 Volts IO 1 Amp IFSM 20 Amps TOP and TSTG -65 to +175 °C RθJE RθJL 20 80 °C/W Peak Surge Current (8.3 msec pulse, half sine wave superimposed on Io, allow junction to reach equilibrium between pulses, TC = 25°C) Operating & Storage Temperature Thermal Resistance SMS- Junction to End Tab Axial- Junction to Lead @ .375” Axial Leaded NOTES: SMS 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25°C. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0160B DOC 1N8021 thru 1N8023 SERIES Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS 3/ CHARACTERISTICS SYMBOL LIMIT UNIT Maximum Instantaneous Forward Voltage Drop (Pulsed, TA = 25°C) @ IF = 1mA @ IF = 10mA @ IF = 100mA @ IF = 200mA @ IF = 500mA @ IF = 1A VF1 VF2 VF3 VF4 VF5 VF6 0.525 0.650 0.800 0.850 0.910 0.980 Vdc Maximum Instantaneous Forward Voltage Drop (Pulsed, TA = 150°C) @ IF = 10mA @ IF = 100mA VF7 VF8 0.500 0.620 Vdc Maximum Instantaneous Forward Voltage Drop (Pulsed, TA = -55°C) @ IF = 10mA @ IF = 100mA VF9 VF10 0.810 0.900 Vdc 1N8021 1N8022 1N8023 BVR 100 150 200 Vdc Minimum Breakdown Voltage IR = 100 μA Maximum Reverse Leakage Current (300 μs Pulse Minimum , TA = 25°C) @ VR = 20V @ VR = 75V @ VR = max rated IR1 IR2 IR3 80 120 750 nA Maximum Reverse Leakage Current (300 μs Pulse Minimum , TA = 125°C) @ VR = 20V @ VR = 75V @ VR = max rated IR4 IR5 IR6 50 75 150 µA Maximum Junction Capacitance (TA = 25°C , f = 1MHz) VR = 0V CJ1 6 pf Maximum Junction Capacitance (TA = 25°C , f = 1MHz) VR = 1.5V CJ2 5 pf Maximum Junction Capacitance (TA = 25°C , f = 1MHz) VR = 10V CJ3 4 pf Maximum Reverse Recovery Time (IF = 50 mA, IR = 100 mA, IRR = 25 mA) trr 5 nsec Maximum Forward Recovery Time (IF = 50 mA) tfr 20 nsec SMS AXIAL DIM A B C D MIN .056” .125” .018” 1.00” MAX .075” .140” .022” 1.50” NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DIM A B C D DATA SHEET #: RC0160B MIN .070” .168” .019” .001” MAX .085” .200” .028” -- DOC