DTC113ZUA / DTC113ZKA / DTC113ZSA Transistors Digital transistors (built in resistors) DTC113ZUA / DTC113ZKA / DTC113ZSA OUT 2.0 1.3 0.9 (2) 0.65 0.65 (3) 0.3 0.7 (1) DTC113ZUA 1.25 0.2 2.1 0~0.1 0.1Min. ROHM : UMT3 EIAJ : SC-70 zEquivalent circuit R1 z External dimensions (Unit : mm) 0.15 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely insulated, the input can be negatively biased. The insulation also eliminates most of the parasitic effects. 3) Only the on / off conditions need to be set for operation, making device design easy. All terminals have same dimensions (1) GND (2) IN (3) OUT Addreviated symbol : 121 DTC113ZKA GND (2) (3) 0.4 R2 0.95 0.95 1.9 2.9 (1) IN 1.6 0.8 0.3Min. 0~0.1 GND 1.1 2.8 OUT 0.15 IN All terminals have same dimensions ROHM : SMT3 EIAJ : SC-59 (1) GND (2) IN (3) OUT Addreviated symbol : E21 DTC113ZSA 2 (15Min.) 3Min. 3 4 0.45 2.5 0.5 5 (1) (2) (3) ROHM : SPT EIAJ : SC-72 (1) GND (2) OUT (3) IN Rev.A 1/3 DTC113ZUA / DTC113ZKA / DTC113ZSA Transistors zAbsolute maximum ratings (Ta=25°C) Parameter Limits(DTC113Z Symbol UA ) KA Unit SA Supply voltage VCC 50 V Input voltage VIN −5 to +10 V IO 100 IC(Max.) 100 Output current mA Power dissipation Pd Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 200 mW 300 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. VI(off) − − 0.3 VI(on) 3 − − VO(on) − 0.1 0.3 V Input voltage Output voltage Unit Conditions VCC=5V, IO=100µA V VO=0.3V, IO=20mA IO/II=10mA/0.5mA II − − 7.2 mA VI=5V IO(off) − − 0.5 µA VCC=50V, VI=0V DC current gain GI 33 − − − VO=5V, IO=5mA Input resistance R1 0.7 1 1.3 kΩ Resistance ratio R2/R1 8 10 12 − fT − 250 − MHz Input current Output current Transition frequency − − VCE=10V, IE= −5mA, f=100MHz ∗ ∗ Transition frequency of the device zPackaging specifications Part No. Package UMT3 SMT3 SPT Packaging type Taping Taping Taping Code T106 T146 TP Basic ordering unit (pieces) 3000 3000 5000 − − DTC113ZUA DTC113ZKA − DTC113ZSA − − − Rev.A 2/3 DTC113ZUA / DTC113ZKA / DTC113ZSA Transistors zElectrical characteristic curves 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) VO=5V 500 2m 1m 500µ Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Ta=100°C 25°C −40°C 200 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI (off) (V) Fig.1 Input voltage vs. output current (ON characteristics) 1 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.2 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m Ta=100°C 25°C −40°C 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0