DTC123JM / DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor Digital transistors (built-in resistors) DTC123JM / DTC123JE / DTC123JUA DTC123JKA / DTC123JSA zEquivalent circuit zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making device design easy. OUT R1 IN R2 GND OUT IN GND zStructure NPN digital transistor (Built-in resistor type) zExternal dimensions (Unit : mm) DTC123JM DTC123JE 1.2 0.8 1.6±0.2 1.0±0.1 0.2 (3) 0.5 0.5 +0.1 0.2−0.05 0.8 (2) 0.4 0.4 1.2 0.32 0.2 0.7±0.1 +0.1 0.2−0.05 0.55±0.1 (1) IN (2) GND (3) OUT ROHM : VMT3 Abbreviated symbol : E42 (3) +0.1 0.3 −0.05 ROHM : EMT3 0~0.1 (1) GND (2) IN (3) OUT 0.1Min. 0.15Max. (2) 0.8±0.1 0.13 0~0.1 0.5 0.22 (1) 1.6±0.2 (1) 0.15±0.05 Abbreviated symbol : E42 DTC123JKA 2.0±0.2 0.8±0.1 0.95 0.95 (2) (2) 0~0.1 Abbreviated symbol : 142 0~0.1 (3) (1) GND (2) IN (3) OUT ROHM : SMT3 EIAJ : SC-59 +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions 0.3Min. 0.3+0.1 0.15±0.05 −0 All terminals have same dimensions 2.8±0.2 2.1±0.1 (1) 1.6+0.2 −0.1 (3) ROHM : UMT3 EIAJ : SC-70 1.1+0.2 −0.1 1.9±0.2 0.7±0.1 0.2 1.25±0.1 (1) 2.9±0.2 0.9±0.1 1.3±0.1 0.65 0.65 0.1Min. DTC123JUA (1) GND (2) IN (3) OUT Abbreviated symbol : E42 4±0.2 2±0.2 (15Min.) 5 ROHM : SPT EIAJ : SC-72 3Min. 3±0.2 DTC123JSA 0.15 0.45+ −0.05 0.4 2.5 + −0.1 (1) (2) (3) 0.5 0.15 0.45 + −0.05 (1) GND (2) OUT (3) IN Rev.A 1/3 DTC123JM / DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor zAbsolute maximum ratings (Ta=25°C) Parameter Limits(DTC123J Symbol M E ) UA Unit KA SA Supply voltage VCC 50 V Input voltage VIN −5 to +12 V IO 100 IC(Max.) 100 Output current mA Power dissipation Pd Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 150 200 mW 300 zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. VI(off) − − 0.5 VI(on) 1.1 − − VO(on) − 0.1 0.3 V II − − 3.6 mA IO(off) − − 0.5 µA VCC=50V, VI=0V GI 80 − − − VO=5V, IO=10mA Input resistance R1 1.54 2.2 2.86 kΩ Resistance ratio R2/R1 17 21 26 − fT − 250 − MHz Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Unit Conditions VCC=5V, IO=100µA V VO=0.3V, IO=5mA IO/II=5mA/0.25mA VI=5V − − VCE=10V, IE= −5mA, f=100MHz ∗ ∗Transition frequency of the device zPackaging specifications Type Package VMT3 EMT3 UMT3 SMT3 SPT Packaging type Taping Taping Taping Taping Taping Code T2L TL T106 T146 TP Basic ordering unit (pieces) 8000 3000 3000 3000 5000 − − − − − − − − − DTC123JM DTC123JE − DTC123JUA − − DTC123JKA − − − DTC123JSA − − − − − Rev.A 2/3 DTC123JM / DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor zElectrical characteristic curves 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 50 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 1 1k VCC=5V VO=5V 500 2m DC CURRENT GAIN : GI 100 1m 500µ Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ 5µ Ta=100°C 25°C −40°C 200 100 50 20 10 5 2 2µ 1µ 0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0