DTD143EK / DTD143EC / DTD143ES Transistors Digital transistors (built-in resistors) DTD143EK / DTD143EC / DTD143ES zExternal dimensions (Unit : mm) zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making device design easy. 2.9±0.2 DTD143EK 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0 to 0.1 2.8±0.2 1.6+0.2 −0.1 (1) +0.1 0.15 −0.06 0.4 +0.1 −0.05 ROHM : SMT3 EIAJ : SC-59 0.3 to 0.6 (3) All terminals have same dimensions (1) GND (2) IN (3) OUT Abbreviated symbol : F23 DTD143EC 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 0.45±0.1 0.95 0.95 (2) 0.2 1.3+ −0.1 zStructure NPN digital transistor (Built-in resistor type) 0 to 0.1 2.4±0.2 (1) 0.2Min. (3) 0.4 +0.1 −0.05 ROHM : SST3 +0.1 0.15 −0.06 (1) GND (2) IN (3) OUT All terminals have same dimensions Abbreviated symbol : R23 zEquivalent circuit 4±0.2 2±0.2 3Min. 3±0.2 DTD143ES OUT (15Min.) R1 IN R2 GND 5 ROHM : SPT EIAJ : SC-72 OUT IN 0.15 0.45+ −0.05 0.4 2.5 + −0.1 0.5 0.15 0.45 + −0.05 (1) GND (2) OUT (3) IN (1) (2) (3) GND zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits (DTD143E K C ) Unit S Supply voltage VCC 50 Input voltage VIN −10 to +30 V Output current IC 500 mA Power dissipation Pd Junction temperature Tj 150 ˚C Storage temperature Tstg −55 to +150 ˚C 200 V 300 mW Rev.A 1/3 DTD143EK / DTD143EC / DTD143ES Transistors zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current Symbol Min. Typ. Max. VI (off) − − 0.5 Unit VI (on) 3 − − VO (on) − 0.1 0.3 V II − − 1.8 mA VI=5V IO (off) − − 0.5 µA VCC=50V, VI=0V VO=5V, IO=50mA V DC current gain GI 47 − − − Input resistance R1 3.29 4.7 6.11 kΩ Resistance ratio R 2 / R1 0.8 1 1.2 − fT − 200 − MHz Transition frequency ∗Transition frequency of the device Conditions VCC=5V, IO=100µA VO=0.3V, IO=20mA IO / II=50mA / 2.5mA − − ∗ VCE=10V, IE= −50mA, f=100MHz zPackaging specifications Type Package SMT3 SST3 SPT Packaging type Taping Taping Taping Code T146 T116 TP Basic ordering unit (pieces) 3000 3000 5000 − − DTD143EK DTD143EC − DTD143ES − − − zElectrical characteristic curves 100 10m 5m OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 20 10 5 Ta= −40˚C 25˚C 100˚C 2 1 500m 200m 100m 500µ 1m 2m 1m 1k VCC=5V Ta=100˚C 25˚C −40˚C 500µ 200µ 100µ 50µ 20µ 10µ 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 200 Ta=100˚C 25˚C −40˚C 100 50 20 10 5 5µ 2 2µ 2m VO=5V 500 DC CURRENT GAIN : GI VO=0.3V 50 1µ 0 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current Rev.A 2/3 DTD143EK / DTD143EC / DTD143ES Transistors 1 lO / lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m 200m 100m 50m Ta=100˚C 25˚C −40˚C 20m 10m 5m 2m 1m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0