STU/D466S

Green
Product
STU/D466S
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
R DS(ON) (m Ω) Max
ID
Rugged and reliable.
11 @ VGS=10V
40V
TO-252 and TO-251 Package.
38A
15 @ VGS=4.5V
G
G
D
S
STU SERIES
TO - 252AA( D - PAK )
S
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
Limit
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
TC=25°C
38
A
TC=70°C
30
A
IDM
a
111
A
TC=25°C
42
W
TC=70°C
27
W
-55 to 150
°C
Thermal Resistance, Junction-to-Case
3
°C/W
Thermal Resistance, Junction-to-Ambient
50
°C/W
-Pulsed
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
R JA
Details are subject to change without notice.
Feb,06,2013
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STU/D466S
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
VGS=0V , ID=250uA
Min
Typ
Max
40
1
±100
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
V
uA
nA
1.7
3
9.5
11
V
m ohm
VGS=4.5V , ID=17A
11
15
m ohm
VDS=5V , ID=19A
55
S
VDS=20V,VGS=0V
f=1.0MHz
2245
321
147
pF
pF
pF
VDS=VGS , ID=250uA
VGS=10V , ID=19A
1
Units
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output
Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
b
VDD=20V
ID=1A
VGS=10V
RGEN= 6 ohm
35
ns
23
72
ns
ns
42
ns
VDS=20V,ID=19A,VGS=10V
29
nC
VDS=20V,ID=19A,VGS=4.5V
13
nC
VDS=20V,ID=19A,
VGS=10V
3.3
nC
5.7
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=7A
0.8
1.3
V
Notes
_ 300us, Duty Cycle <
_ 2%.
a.Pulse Test:Pulse Width <
b.Guaranteed by design, not subject to production testing.
Feb,06,2013
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STU/D466S
Ver 1.0
15
100
V G S =4.5V
80
V G S =4V
ID, Drain Current(A)
ID, Drain Current(A)
V G S =10V
V G S =3.5V
60
40
V G S =3V
20
Tj=125 C
9
6
0
0
0.5
2
2.5
1
1.5
0
3
0.6
1.2
1.8
2.4
3.0
3.6
VDS, Drain-to-Source Voltage(V)
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.0
16
1.8
R DS(on), On-Resistance
Normalized
20
VGS=4.5V
12
VGS=10V
8
4
1.6
V G S =10V
I D =19A
1.4
1.2
V G S =4.5V
I D =17A
1.0
0
0
1
20
60
40
80
100
0
I D, Drain Current(A)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
25
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
-55 C
25 C
3
0
R DS(on)(m Ω)
12
100 125 150
Tj, Junction Temperature( ° C )
1.20
I D =250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Feb,06,2013
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STU/D466S
Ver 1.0
20
30
Is, Source-drain current(A)
I D =19A
25
RDS(on)(m Ω)
20
125 C
15
10
25 C
75 C
5
2
4
6
8
75 C
10
0
V GS, Gate to Source Voltage(V)
3000
C, Capacitance(pF)
2500
Ciss
2000
1500
1000
Coss
Crss
0
5
10
15
20
25
0.75
1.00
1.25
10
VDS=20V
ID=19A
8
6
4
2
0
30
0
4
8
12
16
24
20
28
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
32
300
I D, Drain Current(A)
400
TD(off)
100
Switching Time(ns)
0.50
Figure 8. Body Diode Forward Voltage
Variation with Source Current
Figure 7. On-Resistance vs.
Gate-Source Voltage
0
0.25
VSD, Body Diode Forward Voltage(V)
VGS, Gate-to-Source Voltage(V)
500
25 C
125 C
1
0
0
10
TD(on)
Tf
Tr
10
R
0.3
0.1
1
10
100
DS
(
)
ON
L im
it
10
1m
10
m
DC s
10
1
VDS=20V,ID=1A
VGS=10V
1
100
0u
s
s
VGS=10V
Single Pulse
TC=25 C
1
10
100
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Feb,06,2013
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STU/D466S
Ver 1.0
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1. R JA(t)=r(t)* R JA
2. R JA=See Datasheet
3. TJM-TA=PDM*R JA(t)
4. Duty Cycle,D=t1/t2
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 13. Normalized Thermal Transient Impedance Curve
Feb,06,2013
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STU/D466S
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
A
E
E2
TO-251
C
L
D1
D2
E1
1
2
H
B2
D
3
L2
L1
B1
D3
P
SYMBOL
A
A1
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
A1
B
MILLIMETERS
MIN
MAX
2.100
2.500
0.350
0.650
0.400
0.800
0.650
1.050
0.500
0.900
0.400
0.600
5.300
5.700
5.300
4.900
6.700
7.300
8.000
7.000
15.300
13.700
6.700
6.300
4.600
4.900
4.800
5.200
1.300
1.700
1.400
1.800
0.500
0.900
2.300 BSC
INCHES
MIN
MAX
0.083
0.098
0.014
0.026
0.031
0.016
0.041
0.026
0.035
0.020
0.024
0.016
0.224
0.209
0.209
0.193
0.287
0.264
0.315
0.276
0.539
0.602
0.264
0.248
0.193
0.181
0.189
0.205
0.051
0.067
0.071
0.055
0.020
0.035
0.091 BSC
Feb,06,2013
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STU/D466S
Ver 1.0
E
TO-252
A
b2
C
L3
1
D1
D
E1
H
1
2
3
DETAIL "A"
L4
b1
e
b
L2
L
A1
DETAIL "A"
L1
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
MILLIMETERS
INCHES
MIN
MAX
2.100
2.500
0.000
0.200
0.889
0.400
0.770
1.140
5.460
4.800
0.400
0.600
6.223
5.300
4.900
5.515
6.300
6.731
4.320
5.004
2.290 REF
8.900
10.400
1.780
1.397
2.743 REF.
0.508 REF.
0.890
1.700
1.100
0.500
10°
0°
°
15°
0
MIN
MAX
0.083
0.098
0.008
0.000
0.035
0.016
0.030
0.045
0.189
0.215
0.024
0.016
0.245
0.209
0.193
0.217
0.265
0.248
0.170
0.197
0.090 BSC
0.350
0.409
0.055
0.070
0.108 REF.
0.020 REF.
0.035
0.067
0.020
0.043
10 °
0°
°
15°
0
Feb,06,2013
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STU/D466S
Ver 1.0
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
Feb,06,2013
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