Green Product STU/D432S S a mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 9 @ VGS=10V 40V TO-252 and TO-251 Package. 50A 11 @ VGS=4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM Drain Current-Continuous -Pulsed TC=25°C TC=70°C a b I AS Single Pulse Avalanche Current EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a d Limit Units 40 V ±20 V 50 40 A 147 A A 23 A 130 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 °C/W 50 °C/W d THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Nov,18,2008 1 www.samhop.com.tw STU/D432S Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA IDSS Zero Gate Voltage Drain Current VDS=32V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Min Typ Max 40 Units V uA 1 ±100 nA 1.6 7 3 9 V m ohm VGS=4.5V , ID=5A 9 11 m ohm VDS=10V , ID=10A 28 S VDS=15V,VGS=0V f=1.0MHz 1130 240 145 pF pF pF 18 ns 22 ns 61 ns 9.6 ns VDS=15V,ID=10A,VGS=10V 23.5 nC VDS=15V,ID=10A,VGS=4.5V 11.5 nC VDS=15V,ID=10A, VGS=10V 2.7 nC 3.2 nC VDS=VGS , ID=250uA VGS=10V , ID=10A 1.25 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge c VDD=15V ID=1A VGS=10V RGEN=3.3 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage b VGS=0V,IS=20A 0.91 20 A 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13) Nov,18,2008 2 www.samhop.com.tw STU/D432S Ver 1.1 100 60 V G S =4V 80 ID, Drain Current(A) ID, Drain Current(A) V G S =10V V G S =3.5V 60 40 V G S =3V 20 V G S =2.5V 0 36 -55 C 24 Tj=125 C 0 0 0.5 1 2 1.5 2.5 25 C 12 3 0 1.4 2.1 2.8 3.5 4.2 V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 2.0 R DS(on), On-Resistance Normalized 16 12 VGS=4.5V 8 VGS=10V 4 1.8 V G S =10V I D =10A 1.6 1.4 V G S =4.5V I D =5A 1.2 1.0 1 1 20 40 60 80 0 100 0 I D, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 50 100 75 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 0.7 V DS, Drain-to-Source Voltage(V) 20 RDS(on)(m Ω) 48 100 125 150 Tj, Junction Temperature(° C ) 1.40 I D =250uA 1.30 1.20 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,18,2008 3 www.samhop.com.tw STU/D432S Ver 1.1 30 60 Is, Source-drain current(A) I D =10A 25 RDS(on)(m Ω) 20 125 C 15 10 75 C 25 C 5 0 0 2 4 6 10 10 0 0.24 0.48 0.72 0.96 1.20 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) 10 1500 C, Capacitance(pF) 25 C 125 C 1 8 1800 Ciss 1200 900 600 Coss 300 Crss 0 0 5 10 15 20 25 VDS=15V ID=10A 8 6 4 2 0 30 0 4 8 12 16 20 24 28 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 32 800 100 I D, Drain Current(A) 1000 Switching Time(ns) 20 TD(off) Tr TD(on) Tf 10 1 6 R 10 0.3 0.1 60 100 ( DS ) ON L im it 10 1m 10 m DC s 10 1 VDS=15V,ID=1A VGS=10V 1 100 0u s s VGS=10V Single Pulse TA=25 C 1 10 40 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,18,2008 4 www.samhop.com.tw STU/D432S Ver 1.1 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Nov,18,2008 5 www.samhop.com.tw STU/D432S Ver 1.1 PACKAGE OUTLINE DIMENSIONS TO-251 A E b3 c2 D1 E1 D H 1 2 3 b2 L5 L4 L b e SYMBOL b4 c MILLIMETERS INCHES MIN MAX MIN MAX E 6.400 6.731 0.252 0.265 L 3.980 4.280 0.157 0.169 L4 0.698 REF 0.027 REF 0.038 0.236 0.048 0.245 0.435 0.450 0.880 0.025 0.035 1.140 5.460 0.030 0.205 0.045 0.215 0.550 0.018 0.022 L5 0.972 1.226 D 6.000 11.050 6.223 11.450 0.640 b3 0.770 5.210 b4 0.450 e 2.286 BSC 2.380 2.200 0.400 0.600 0.400 0.600 H b b2 A c c2 D1 E1 5.100 4.400 0.090 BSC 0.087 0.094 0.016 0.016 0.201 0.173 0.024 0.024 Nov,18,2008 6 www.samhop.com.tw STU/D432S Ver 1.1 E TO-252 A b2 C L3 1 D1 D E1 H 2 1 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Nov,18,2008 7 www.samhop.com.tw STU/D432S Ver 1.1 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N ӿ97 ² 1.0 W 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Nov,18,2008 8 www.samhop.com.tw