Green Product STU/D630S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON). PRODUCT SUMMARY VDSS 60V RDS(ON) (mΩ) Max ID 10 @VGS=10V 18 @VGS=4.5V Rugged and reliable. TO-252 and TO-251 Package. 46A G G D S STU SERIES TO-252AA(D-PAK) S STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 46 A 36.8 A IDM EAS -Pulsed TC=25°C TC=70°C a a Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range c 134 A 210 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case 3 °C/W Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to change without notice. Jan,18,2013 1 www.samhop.com.tw STU/D630S Ver 1.0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA IDSS Zero Gate Voltage Drain Current VDS=48V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage Drain-Source On-State Resistance gFS Forward Transconductance Typ Max 60 Units V 1 uA ±100 nA 1.8 3 V VGS=10V , ID=23A 8 m ohm VGS=4.5V , ID=23A 11 10 18 VDS=10V , ID=23A 50 S VDS=25V,VGS=0V f=1.0MHz 3840 246 213 pF pF pF 64 ns 56 ns 171 ns 38 ns 56 24 nC nC 6 nC 16 nC VDS=VGS , ID=250uA RDS(ON) Min 1 m ohm b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge b VDD=30V ID=1A VGS=10V RGEN= 6 ohm VDS=30V,ID=23A,VGS=10V VDS=30V,ID=23A,VGS=4.5V VDS=30V,ID=23A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=5A 0.79 1.3 V Notes a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) Jan,18,2013 2 www.samhop.com.tw STU/D630S Ver 1.0 35 80 VGS=4.5V 64 VGS=5V ID, Drain Current(A) ID, Drain Current(A) VGS=10V VGS=4V 48 32 VGS=3.5V 16 VGS=3V 0 21 Tj=125 C 14 25 C 1 0.5 2 1.5 0 3 2.5 0.9 1.8 3.6 2.7 4.5 5.4 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 2.2 15 2.0 RDS(on), On-Resistance Normalized 18 VGS=4.5V 12 9 VGS=10V 6 3 VGS=10V ID=23A 1.8 1.6 1.4 1.2 VGS=4.5V ID=17A 1.0 0 0 16 1 32 48 64 80 0 ID, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage VDS=VGS ID=250uA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 50 75 100 125 150 Tj(°C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.3 1.2 25 Tj, Junction Temperature(°C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage -55 C 7 0 0 RDS(on)(mΩ) 28 100 125 150 Tj, Junction Temperature(°C ) 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jan,18,2013 3 www.samhop.com.tw STU/D630S Ver 1.0 20 48 Is, Source-drain current(A) ID=23A RDS(on)(m Ω ) 40 32 24 125 C 16 75 C 8 25 C 125 C 10 5 75 C 25 C 1 0 4 2 0 6 8 0 10 VGS, Gate to Source Voltage(V) 4800 C, Capacitance(pF) 4000 Ciss 3200 2400 1600 Coss Crss 0 5 10 15 20 25 0.9 1.2 1.5 Figure 8. Body Diode Forward Voltage Variation with Source Current Figure 7. On-Resistance vs. Gate-Source Voltage 0 0.6 VSD, Body Diode Forward Voltage(V) VGS, Gate-to-Source Voltage(V) 800 0.3 10 VDS=30V ID=23A 8 6 4 2 0 30 0 16 8 24 32 48 40 56 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 64 ID, Drain Current(A) 1000 Switching Time(ns) TD(off ) 100 Tr TD(on) Tf 10 100 R (O DS N) Lim 10 10 0u us s 1m 10 s m DC s 10 1 it VGS=10V Single Pulse TC=25 C VDS=30V,ID=1A VGS=10V 0.1 1 1 10 100 0.1 Rg, Gate Resistance( Ω ) 1 10 100 VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jan,18,2013 4 www.samhop.com.tw STU/D630S Ver 1.0 V(BR)DSS tp L VDS D.U.T RG + - VDD IAS 20V tp 0.01 IAS Unclamped Inductive Waveforms Uncamped Inductive Test Circuit Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. R JA(t)=r(t)* R JA 2. R JA=See Datasheet 3. TJM-TA=PDM*R JA(t) 4. Duty Cycle,D=t1/t2 SINGLE PULSE 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jan,18,2013 5 www.samhop.com.tw STU/D630S Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 11.430 10.830 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.426 0.450 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Jan,18,2013 6 www.samhop.com.tw STU/D630S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Jan,18,2013 7 www.samhop.com.tw STU/D630S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Jan,18,2013 8 www.samhop.com.tw