Green Product STU/D449S S a mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 41 @ VGS=-10V -40V TO-252 and TO-251 Package. -24A 74 @ VGS=-4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID Drain Current-Continuous IDM Limit Units Drain-Source Voltage -40 V Gate-Source Voltage ±20 V -24 A -19 A -Pulsed TC=25°C TC=70°C a b EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a -73 A 56 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 °C/W 50 °C/W d THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Apr,01,2010 1 www.samhop.com.tw STU/D449S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min -40 Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS=0V , ID=-250uA IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V V uA 1 ±100 nA -2.5 -4 V 33 41 VGS=-4.5V , ID=-9A 57 74 m ohm m ohm VDS=-10V , ID=-12A 24 S VDS=-20V,VGS=0V f=1.0MHz 900 115 90 pF pF pF ns ns ns ns VDS=-20V,ID=-12A,VGS=-10V 21 20 51 20 20 nC VDS=-20V,ID=-12A,VGS=-4.5V 9.5 nC VDS=-20V,ID=-12A, VGS=-10V 2.5 5.5 nC nC VDS=-32V , VGS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS CISS COSS CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge -2 c Input Capacitance Output Capacitance Reverse Transfer Capacitance tD(ON) tr tD(OFF) tf VDS=VGS , ID=-250uA VGS=-10V , ID=-12A c VDD=-20V ID=-1A VGS=-10V RGEN= 6 ohm Turn-Off Delay Time Fall Time Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage b VGS=0V,IS= -2A -0.8 -1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = -20V.(See Figure13) Apr,01,2010 2 www.samhop.com.tw STU/D449S Ver 1.0 30 15 V G S =-4V -I D, Drain Current(A) -I D, Drain Current(A) 12 V G S =-10V 9 V G S =-4.5V V G S =-3.5V 6 3 24 18 12 125 C 6 25 C V G S =-3V -55 C 0 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 -V DS, Drain-to-Source Voltage(V) 75 1.8 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 2.0 V G S =-4.5V 45 30 V G S =-10V 15 3 1 6 9 12 4 5 6 V G S =-10V I D = -12A 1.6 1.4 1.2 V G S =-4.5V I D = -9A 1.0 0 15 0 25 50 75 100 125 150 T j ( °C ) -I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 3 Figure 2. Transfer Characteristics 90 1 2 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 60 1 V DS =V G S I D =-250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Apr,01,2010 3 www.samhop.com.tw STU/D449S Ver 1.0 60 120 -Is, Source-drain current(A) I D =-12A R DS(on)(m Ω) 100 80 125 C 60 40 25 C 75 C 20 0 0 2 4 6 8 25 C 10 1 10 0 -V GS, Gate-to-Source Voltage(V) 0.4 0.8 1.2 1.6 2.0 -V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -V GS, Gate to Source Voltage(V) 1200 C is s 1000 C, Capacitance(pF) 75 C 125 C 800 600 400 Cos s 200 C rs s 0 0 5 10 15 20 25 V DS = -20V I D =-12A 8 6 4 2 0 0 30 -V DS, Drain-to-Source Voltage(V) 3 6 12 9 21 24 15 18 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 -ID, Drain Current(A) Switching Time(ns) 100 TD(off ) Tr TD(on) Tf 10 VDS=-20V,ID=-1A VGS=-10V 1 1 10 100 10 1 0.1 Rg, Gate Resistance(Ω) RD S ( ) ON i L im 10 t 1m 0u s s 10 m DC s VGS=-10V Single Pulse TA=25 C 1 10 100 -V DS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Apr,01,2010 4 www.samhop.com.tw STU/D449S Ver 1.0 V ( BR )D S S tp L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13a. Figure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E R J A (t)=r (t) * R J A R J A =S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Apr,01,2010 5 www.samhop.com.tw STU/D449S Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Apr,01,2010 6 www.samhop.com.tw STU/D449S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Apr,01,2010 7 www.samhop.com.tw STU/D449S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Apr,01,2010 8 www.samhop.com.tw