SDN135 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output Description Features The SDN135 is a high speed optocoupler consisting of an infrared GaAs LED optically coupled through a high isolation barrier to an integrated high speed transistor and photodiode. Separate access to the photodiode and transistor allow users to reduce base-collector capacitance, enabling much higher switching speeds. Signals with frequencies of up to 2.0MHz can be switched, giving the SDN135 a much broader application range than traditional optocouplers. Agency Approvals The SDN135 comes standard in an 8 pin DIP package. UL / C-UL: VDE: Applications High Speed Logic Ground Isolation Replace Slower Speed Optocouplers Line Receivers Power Transistor Isolation Pulse Transformer Replacement Switch Mode Power Supplies High Voltage Insulation Ground Isolation – Analog Signals NC 1 The values indicated are absolute stress ratings. Functional operation of the device is not implied at these or any conditions in excess of those defined in electrical characteristics section of this document. Exposure to absolute Maximum Ratings may cause permanent damage to the device and may adversely affect reliability. Storage Temperature …………………………..-55 to +125°C Operating Temperature …………………………-40 to +85°C Continuous Input Current ………………………………..40mA Transient Input Current ………………….……………..400mA Reverse Input Control Voltage …………..…………………5V Input Power Dissipation …………………………………40mW Peak Output Current (Pin 6) …………………………….16mA Max Emitter-Base Reverse Voltage (Pin 5-7)……………..5V Max Supply Voltage (Pin 8-5) ……………………………..15V Max Output Voltage (Pin 6-5) ……………………………..15V Max Base Current (Pin 7) …………………………………5mA Output Power Dissipation ……………………………..100mW 8 VCC 2 7 VB Cathode 3 6 VO NC 4 Ordering Information 5 Ground SDN135 Truth Table (Positive Logic) LED ON OFF VO LOW HIGH ** A 0.1μF bypass Capacitor must be connected between pins 5 & 8 (GND & VCC) © 2012 Solid State Optronics • San José, CA www.ssousa.com • +1.408.293.4600 File # E201932 File # 40035191 (EN 60747-5-2) Absolute Maximum Ratings Schematic Diagram Anode TTL Compatible High Bit Rate: 1Mb/s Bandwidth: 2.0MHz Open Collector Output High Isolation Voltage (5000VRMS) High Common Mode Interference Immunity RoHS / Pb-Free / REACH Compliant Part Number Description SDN135 SDN135-H SDN135-S SDN135-STR 8 pin DIP, (50/Tube) 0.40” (10.16mm) Lead Spacing (VDE0884) 8 pin SMD, (50/Tube) 8 pin SMD, Tape and Reel (1000/Reel) NOTE: Suffixes listed above are not included in marking on device for part number identification Page # 1 SDN135/H/S/TR Rev 1.10 (08/09/2012) 001510 SDN135 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output Electrical Characteristics, TA = 25°C (unless otherwise specified) Parameter Symbol Min. Typ. Max. Units Test Conditions Input Specifications LED Forward Voltage VF - 1.4 1.7 V IF = 16mA LED Reverse Voltage BVR 5 - - V IR = 10μA CTR 7 18 50 % IF=16mA, VCC=4.5V, VO=0.4V VOL - 0.18 0.4 V IF=0mA, VO=VCC=4.5V, IO=3mA IOH - - 0.5 A IF=0mA, VO=VCC=5.5V ICCL - 400 - A IF=16mA, VO=OPEN (VCC=15V) ICCH - - 1 A IF=0mA, VO=OPEN (VCC=15V) Detector Specifications Current Transfer Ratio 1 Logic Low Output Voltage Logic High Output Current Logic Low Supply Current 2 Logic High Supply Current 2 Offset Voltage Switching Specifications, TA = 0~70°C, VCC = 5V (unless otherwise specified) Propagation Delay Time to 3 Low Output Level Propagation Delay Time to 3 High Output Level tPHL - 0.09 1.5 S TA=25°C (RL=4.1K, IF=16mA) tPLH - 0.8 1.5 S TA=25°C (RL=4.1K, IF=16mA) Logic High Common Mode Transient 3 Immunity |CMH| 1 - - KV/ S IF=0mA, VCM=10VP-P, RL=4.1K Logic High Common Mode Transient 3 Immunity |CML| 1 - - KV/ S IF=16mA, VCM=10VP-P, RL=4.1K Coupled Capacitance S Contact Transient Ratio S Isolation Specifications Input-Output Insulation Leakage Current II-O - Withstand Insulation Test Voltage VISO 5000 Input-Output Resistance RI-O - - 1.0 10 12 μA 45% RH, t=5s, VI-O=3kV - VRMS RH ≤ 50%, t=1min - VI-O = 500VDC Notes 1. Current Transfer Ratio (CTR) as a percentage is defined as the ratio of output collector current (IO) to the forward LED input current (IF) times 100 2. A 0.1µF or bigger bypass capacitor for VCC is needed as shown in Figure 1 on following page 3. The 4.1KΩ load represents 1LSTTL unit load of 0.36mA and the 6.1KΩ pull-up resistor. © 2012 Solid State Optronics • San José, CA www.ssousa.com • +1.408.293.4600 Page # 2 SDN135/H/S/TR Rev 1.10 (08/09/2012) 001510 SDN135 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output SDN135 Electrical Test Circuits Figure 1: Single Channel Test Circuit for tPHL and tPLH Figure 2: Single Channel Test Circuit for Common Mode Transient Immunity © 2012 Solid State Optronics • San José, CA www.ssousa.com • +1.408.293.4600 Page # 3 SDN135/H/S/TR Rev 1.10 (08/09/2012) 001510 SDN135 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output SDN135 Performance & Characteristics Plots, TA = 25°C, VCC=5V (unless otherwise specified) Figure 3: Output Current (IO) vs. Output Voltage (VO) Figure 4: Input Current (IF) vs. Forward Voltage (VF) Figure 5: Logic High Output Current (IOH) vs. Temperature (°C) Figure 6: Current Transfer Ratio (CTR) vs. Input Current (IF) Figure 7: Current Transfer Ratio (CTR) vs. Temperature (°C) Figure 8: Small Signal Current Transfer Ratio ( IO ) IF vs. IO IF Quiescent Input Current (IF) [RL = 100) © 2012 Solid State Optronics • San José, CA www.ssousa.com • +1.408.293.4600 Page # 4 SDN135/H/S/TR Rev 1.10 (08/09/2012) 001510 SDN135 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output SDN135 Performance & Characteristics Plots, TA = 25°C, VCC=5V (unless otherwise specified) Figure 9: Propagation Delay Time (tp) vs. Temperature (°C) Figure 10: Load Resistance (RL) vs. Propagation Delay Time (tp) TPLH SDN135 TPLH SDN136 TPHL SDN136 TPHL SDN135 © 2012 Solid State Optronics • San José, CA www.ssousa.com • +1.408.293.4600 Page # 5 SDN135/H/S/TR Rev 1.10 (08/09/2012) 001510 SDN135 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output SDN135 Solder Reflow Temperature Profile Recommendations (1) Infrared Reflow: Refer to the following figure as an example of an optimal temperature profile for single occurrence infrared reflow. Soldering process should not exceed temperature or time limits expressed herein. Surface temperature of device package should not exceed 250ºC: G F D E H B A C Figure 11 Process Step A B C D E F G H Description Parameter Preheat Start Temperature (ºC) Preheat Finish Temperature (ºC) Preheat Time (s) Melting Temperature (ºC) Time above Melting Temperature (s) Peak Temperature, at Terminal (ºC) Dwell Time at Peak Temperature (s) Cool-down (ºC/s) 150ºC 180ºC 90 - 120s 230ºC 30s 260ºC 10s <6ºC/s (2) Wave Solder: Maximum Temperature: Maximum Time: Pre-heating: Single Occurrence 260ºC (at terminal) 10s 100 - 150ºC (30 - 90s) (3) Hand Solder: Maximum Temperature: Maximum Time: Single Occurrence © 2012 Solid State Optronics • San José, CA www.ssousa.com • +1.408.293.4600 350ºC 3s (at tip of soldering iron) Page # 6 SDN135/H/S/TR Rev 1.10 (08/09/2012) 001510 SDN135 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output SDN135 Package Dimensions 8 PIN DIP Package © 2012 Solid State Optronics • San José, CA www.ssousa.com • +1.408.293.4600 Note: Page # 7 All dimensions in millimeters [mm] with inches in parenthesis () SDN135/H/S/TR Rev 1.10 (08/09/2012) 001510 SDN135 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output SDN135 Package Dimensions 8 PIN WIDE Lead Space Package (-H) © 2012 Solid State Optronics • San José, CA www.ssousa.com • +1.408.293.4600 Note: Page # 8 All dimensions in millimeters [mm] with inches in parenthesis () SDN135/H/S/TR Rev 1.10 (08/09/2012) 001510 SDN135 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output SDN135 Package Dimensions 8 PIN SMD Surface Mount Package (-S) © 2012 Solid State Optronics • San José, CA www.ssousa.com • +1.408.293.4600 Note: Page # 9 All dimensions in millimeters [mm] with inches in parenthesis () SDN135/H/S/TR Rev 1.10 (08/09/2012) 001510 SDN135 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output SDN135 Packaging Specifications Tape & Reel Specifications (T&R) Specification Note: Symbol All dimensions in millimeters [mm] with inches in parenthesis () Dimensions, mm ( inches ) Tape Width W 16 0.3 ( 0.63 ) Sprocket Hole Pitch P0 4 0.1 ( 0.15 ) Compartment Location F P2 7.5 0.1 ( 0.295 ) 2 0.1 ( 0.079 ) Compartment Pitch P1 12 0.1 ( 0.472 ) © 2012 Solid State Optronics • San José, CA www.ssousa.com • +1.408.293.4600 Page # 10 SDN135/H/S/TR Rev 1.10 (08/09/2012) 001510 SDN135 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output DISCLAIMER Solid State Optronics (SSO) makes no warranties or representations with regards to the completeness and accuracy of this document. SSO reserves the right to make changes to product description, specifications at any time without further notices. SSO shall not assume any liability arising out of the application or use of any product or circuit described herein. Neither circuit patent licenses nor indemnity are expressed or implied. Except as specified in SSO’s Standard Terms & Conditions, SSO disclaims liability for consequential or other damage, and we make no other warranty, expressed or implied, including merchantability and fitness for particular use. LIFE SUPPORT POLICY SSO does not authorize use of its devices in life support applications wherein failure or malfunction of a device may lead to personal injury or death. Users of SSO devices in life support applications assume all risks of such use and agree to indemnify SSO against any and all damages resulting from such use. Life support devices are defined as devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when used properly in accordance with instructions for use can be reasonably expected to result in significant injury to the user, or (d) a critical component of a life support device or system whose failure can be reasonably expected to cause failure of the life support device or system, or to affect its safety or effectiveness. © 2012 Solid State Optronics • San José, CA www.ssousa.com • +1.408.293.4600 Page # 11 SDN135/H/S/TR Rev 1.10 (08/09/2012) 001510