MAAM71200
Low Noise GaAs MMIC Power Amplifier
7.5 - 12.0 GHz
Features
Rev. V6
Die
Noise Figure: 2.3 dB Typical
Gain: 16.5 dB Typical
Low Bias Current
Single Bias Supply
On-Chip Bias Network
DC Decoupled RF Input and Output
Description
The MAAM71200 die is a wide-band, low noise,
MMIC amplifier. It includes two integrated gain
stages and employs series inductive feedback to
obtain excellent noise figure and a good, 50 Ω, input
and output impedance match over the entire
frequency band. The MAAM71200 operates from a
single +4 V supply.
The MAAM71200 is manufactured in-house using a
reliable, 0.5-micron, GaAs MESFET process. This
product is 100% RF tested to ensure compliance to
performance specifications.
Schematic
VDD
Ordering Information
Part Number
Package
MAAM71200
Die
RF OUT
RF IN
Absolute Maximum Ratings 1
Parameter
Absolute Maximum
Voltage
+7 V
Input Power
+20 dBm
Operating Temperature
-55°C to +125°C
Storage Temperature
-65°C to +150°C
S1a
S1b
S1c S2a
S2b
S2c
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
1
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S2d
MAAM71200
Low Noise GaAs MMIC Power Amplifier
7.5 - 12.0 GHz
Rev. V6
Electrical Specifications: TA = 25°C, Z0 = 50 Ω VDD = +4 V, IDD = 40 mA Typ, 55 mA Max.
Parameter
Test Conditions
Units
Min.
Typ.
Max.
—
dB
15.0
16.5
—
Gain Flatness
—
dB
—
± 0.8
—
2
—
dB
—
2.3
3.2
Input VSWR
Output VSWR
—
Ratio
Ratio
—
—
1.8:1
1.5:1
—
—
Output Power at 1 dB Gain Compression
—
dBm
—
12
—
Third Order Intercept
—
dBm
—
22
—
Reverse Isolation
—
dB
—
30
—
Gain
2
Noise Figure
2. 100% on-wafer tested.
Typical Performance Curves
Noise Figure
Gain
20
7
6
18
+25 C
-55 C
+85 C
5
16
+25 C
-55 C
+85 C
14
4
3
12
2
10
1
5
6
7
8
9
10
11
12
13
14
Frequency (GHz)
5
6
7
8
9
10
11
12
13
14
Frequency (GHz)
VSWR
3.0
INPUT
OUTPUT
2.5
2.0
1.5
1.0
5
6
7
8
9
10
11
12
13
14
Frequency (GHz)
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAM71200
Low Noise GaAs MMIC Power Amplifier
7.5 - 12.0 GHz
Typical Bias Configuration 3,4,5
Rev. V6
Outline Drawing
VDD (D)
1000 pF min.
RF OUT
RF IN
or
or
S1a
S1b or S1c
S2a
S2b, S2c
or S2d
3. Nominal bias is obtained with on-chip resistors by grounding
pads S1b and S2b.
4. Ground pads S1b and S2c for lower current or ground pads
S1c and S2d for lowest current using on-chip resistors.
5. Optional biasing can be obtained with off-chip resistors bonded
to pads S1a and S2a. Adjusting the bias can customize the
performance to suit special requirements.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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For further information and support please visit:
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MAAM71200
Low Noise GaAs MMIC Power Amplifier
7.5 - 12.0 GHz
Rev. V6
Handling Procedures
Bonding
Permanent damage to the MAAM71200 may occur
if the following precautions are not adhered to:
A. Ball or wedge bond with 1.0 mil diameter gold
wire of 3.0 mil x 0.5 mil ribbon. Thermosonic
bonding with a nominal stage temperature of
150°C and a ball bonding force of 40 to 50
grams or wedge bonding force of 18 to 22
grams is recommended. Ultrasonic energy and
time should be adjusted to the minimum levels
necessary to achieve reliable bonds.
B. Bonds should be started on the die and
terminated on the package.
C. Bonding pads are 4.0 x 4.0 mils minimum.
A. Cleanliness - The MAAM71200 should be handled in a clean environment. DO NOT attempt
to clean assembly after the MAAM71200 is
installed.
B. Static Sensitivity - All die handling equipment
and personnel should comply with DOD-STD1686 Class I.
C. Transients - Avoid instrument and power supply transients while bias is connected to the
MAAM71200. Use shielded signal and bias
cables to minimize inductive pick-up.
D. General Handling - DO NOT touch the surface
of the die.
It is recommended that the
MAAM71200 die be handled along the long
side with a sharp pair of tweezers.
Mounting
The MAAM71200 is back-metallized with Pd/Ni/Au
(100/1, 000/30,000Å) metallization. It can be diemounted using Au/Sn eutectic preforms or a thermally and electrically conductive epoxy. The attachment surface should be clean and flat.
Eutectic Die Attach:
A. An 80/20 Au/Sn preform is recommended with
a work surface temperature of approximately
255°C and a tool temperature of 265°C. When
hot 95/5 nitrogen/hydrogen gas is applied,
solder temperature should be approximately
290°C.
B. DO NOT expose the MAAM71200 to a
temperature greater than 320°C for more than
20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach:
A. Electrically conductive epoxy is required.
B. Apply a minimum amount of epoxy and place
the MAAM71200 into position. A thin epoxy
fillet should be visible around the perimeter of
the die.
C. Cure epoxy per manufacturer’s recommended
schedule.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAM71200
Low Noise GaAs MMIC Power Amplifier
7.5 - 12.0 GHz
Rev. V6
M/A-COM Technology Solutions Inc. All rights reserved.
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5
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customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support