2N2222A - SemeLAB

SILICON SWITCHING NPN TRANSISTOR
2N2222A
High Speed Saturated Switching
TO-18 Hermetic Package
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Total Power Dissipation at
TA = 25°C
Derate Above 25°C
TJ
Tstg
Junction Temperature Range
Storage Temperature Range
75V
40V
6V
0.8A
500mW
2.86mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
RθJA
Parameters
Max.
Units
Thermal Resistance, Junction To Ambient
350
°C/W
RθJC
Thermal Resistance, Junction To Case
150
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab
assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that
datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone: +44 (0) 1455 556565
Fax: +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number: 3554
Issue: 3
Page: 1 of 3
SILICON SWITCHING NPN TRANSISTOR
2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
IC = 10mA
40
IC = 10µA
75
IE = 10µA
6
ICEX
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter
Cut-Off Current
ICBO
Collector-Base
Cut-Off Current
IEBO
Emitter Cut-Off Current
(1)
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCE(Sat)
(1)
VBE(Sat)
(1)
hFE
(1)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Min.
Typ.
Max.
Units
V
VEB = 3V
VCE = 60V
10
IE = 0
VCB = 60V
10
TA = 150°C
10
µA
IC = 0
VEB = 3V
10
nA
IC = 150mA
IB = 15mA
0.3
IC = 500mA
IB = 50mA
1.0
IC = 150mA
IB = 15mA
IC = 500mA
IB = 50mA
IC = 0.1mA
VCE = 10V
35
IC = 1.0mA
VCE = 10V
50
IC = 10mA
VCE = 10V
75
TA = -55°C
35
IC = 150mA
VCE = 10V
100
IC = 150mA
VCE = 1.0V
50
IC = 500mA
VCE = 10V
40
DC Current Gain
nA
V
0.6
1.2
2.0
300
DYNAMIC CHARACTERISTICS
Cobo
Output Capacitance
VCB = 10V
IE = 0
f = 1.0MHz
8
Cibo
Input Capacitance
VEB = 0.5V
IC = 0
f = 1.0MHz
30
ft
Transition Frequency
IC = 20mA
VCE = 20V
f = 100MHz
300
hfe
IC = 1.0mA
VCE = 10V
f = 1.0kHz
50
300
Small Signal Current Gain
IC = 10mA
VCE = 10V
f = 1.0kHz
75
375
td
Delay Time
VCC = 30V
VBE = 0.5V
10
tr
Rise Time
IC = 150mA
IB1 = 15mA
25
ts
Storage Time
VCC = 30V
VBE = 0.5V
225
tf
Fall Time
IC = 150mA
IB1 = IB2 = 15mA
60
pF
MHz
-
ns
Note
(1)
Pulse Width ≤ 380µs, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone: +44 (0) 1455 556565
Fax: +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number: 3554
Issue: 3
Page: 2 of 3
SILICON SWITCHING NPN TRANSISTOR
2N2222A
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
12.7 (0.500)
min.
5.33 (0.210)
4.32 (0.170)
4.95 (0.195)
4.52 (0.178)
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
3
1
2
TO-18 (TO-206AA) METAL PACKAGE
Underside View
Pin 1 – Emitter
Pin 2 – Base
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone: +44 (0) 1455 556565
Fax: +44 (0) 1455 552612
Email: [email protected]
Pin 3 - Collector
Website: http://www.semelab-tt.com
Document Number: 3554
Issue: 3
Page: 3 of 3