SILICON EPITAXIAL NPN TRANSISTOR BUX39 • High Current Capability. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEX VCER VCEO VEBO IC ICM IB PD Collector – Base Voltage Collector – Emitter Voltage Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current Base Current Total Power Dissipation at VBE = -1.5V RBE = 100Ω tp = 10ms TC = 25°C Derate Above 25°C TJ Tstg Junction Temperature Range Storage Temperature Range 120V 120V 110V 90V 7V 30A 40A 6A 120W 0.68W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. Units 1.46 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9312 Issue 1 Page 1 of 3 SILICON EPITAXIAL NPN TRANSISTOR BUX39 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions ICEO Collector Cut-Off Current VCE = 70V IB = 0 1.0 ICEX Collector Cut-Off Current VCE = 100V VBE = -1.5V 1.0 IEBO Emitter Cut-Off Current VEB = 5V IC = 0 Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC = 10mA IB = 0 90 IE = 50mA IC = 0 7 IC = 12A IB = 1.2A 0.4 1.2 IC = 20A IB = 2.5A 0.7 1.6 IC = 20A IB = 2.5A 1.3 2.5 IC = 12A VCE = 4V 15 IC = 20A VCE = 4V 8 (1) V(BR)CEO (1) V(BR)EBO (1) VCE(sat) VBE(sat) hFE (1) IS/B (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Forward-current transfer ratio Second Breakdown Collector Current Min. Typ TC = 125°C VCE = 45V VCE = 30V Max. Units mA 5 t = 1.0s 1.0 V 45 1.0 A 4 DYNAMIC CHARACTERISTICS IC = 1.0A fT Transition Frequency ton Turn-On Time ts Storage Time IC = 20A tf Fall Time IB1 = -IB2 = 2.5A VCE = 15V 8 MHz f = 5MHz IC = 20A VCC = 30V IB1 = 2.5A VCC = 30V 0.8 1.5 0.55 1.0 0.15 0.3 µs Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9312 Issue 1 Page 2 of 3 SILICON EPITAXIAL NPN TRANSISTOR BUX39 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) METAL PACKAGE Underside View Pin 1 - Base Pin 2 - Emitter Case - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9312 Issue 1 Page 3 of 3