SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX20 • High Current, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEX VCEO VEBO IC ICM IB PD TJ Tstg Collector – Base Voltage VBE = -1.5V Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current tp = 10ms Peak Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 160V 160V 125V 7V 50A 60A 10A 350W 2W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 0.5 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3246 Issue 3 Page 1 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX20 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions IC = 50mA 125 V(BR)EBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IE = 1.0mA 7 ICEO Collector Cut-Off Current VCE = 100V IB = 0 3 ICEX Collector Cut-Off Current VCE = 160V VBE = -1.5V 3 TC = 125°C 12 IEBO Emitter Cut-Off Current VEB = 5V IC = 0 1.0 IC = 25A IB = 2.5A 0.3 0.6 IC = 50A IB = 5A 0.55 1.2 IC = 50A IB = 5A 1.35 2 IC = 25A VCE = 2V 20 IC = 50A VCE = 4V 10 IC = 2A VCE = 15V (1) V(BR)CEO (1) VCE(sat) VBE(sat) hFE (1) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Forward-current transfer ratio Min. Typ Max. Units V mA V 60 DYNAMIC CHARACTERISTICS fT Transition Frequency ton Turn-On Time ts Storage Time IC = 50A tf Fall Time IB1 = -IB2 = 5A 8 MHz f = 5MHz IC = 50A VCC = 60V IB1 = 5A VCC = 60V 0.4 1.5 0.85 1.2 0.1 0.3 µs Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3246 Issue 3 Page 2 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX20 MECHANICAL DATA Dimensions in mm (inches) 3 9 .9 5 (1 .5 7 3 ) m a x . 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s . 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 2 1 2 6 .6 7 (1 .0 5 0 ) m a x . 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 ) 7 .8 7 (0 .3 1 0 ) 6 .9 9 (0 .2 7 5 ) 1 2 .0 7 (0 .4 7 5 ) 1 1 .3 0 (0 .4 4 5 ) 1 .7 8 (0 .0 7 0 ) 1 .5 2 (0 .0 6 0 ) 2 0 .3 2 (0 .8 0 0 ) 1 8 .8 0 (0 .7 4 0 ) d ia . 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) d ia . 2 p lc s . TO3 (TO-204AE) Pin 1 - Base Pin 2 - Emitter Case - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 3246 Issue 3 Page 3 of 3