LED760-40K42 stem type LED with high beam LED760-40K42 is AlGaAs LED mounted on TO-46 stem with unspherical glass lens, being designed for high beam uses. On forward bias, it emits a spectral band of radiation, which peaks at 760nm. ♦Outer dimension（Unit:mm） ♦Features 1) High radiated intensity 2) High Reliability ♦Specifications 1) Product Name 2) Type No. 3) Chip Spec. (1) Material (2) Peak Wavelength 4) Package (1) Type (2) Lens (3) Cap Infrared LED Lamp LED760-40K42 AlGaAs 760nm TO-46 stem Unspherical glass lens Gold plated ♦Absolute Maximum Ratings Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation PD 200 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 500 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -30 ~ +80 °C -30 ~ +100 °C Storage Temperature TSTG Soldering Temperature TSOL 260 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition : Soldering condition must be completed within 3 seconds at 260°C ♦Electro-Optical Characteristics Item Symbol Condition Minimum Forward Voltage VF IF=50mA Reverse Current IR VR=5V Total Radiated Power PO IF=50mA 6 Radiant Intensity IE IF=50mA 740 IF=50mA Peak Wavelength λP Half Width IF=50mA ∆λ Viewing Half Angle IF=50mA θ 1/2 Rise Time IF=50mA ｔｒ Fall Time IF=50mA ｔｆ ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512. Typical 1.85 10 60.0 760 30 ±6 80 80 Maximum 2.00 10 780 Unit V uA mW mW/sr nm nm deg. ns ns