LED34-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement. LED50-SMD3 has a stable ouput power and a lifetime more then 80000 hours. Features • • • • Structure: InAsSb/InAsSbP Peak Wavelength: typ. 3.40 µm Optical Ouput Power: typ. 35 µW qCW Package: SMD 3x3 mm Specifications T=300 K 150 mA CW Min. 3.32 400 Rating Typ. 3.40 500 Max. 3.46 600 200 mA qCW 25 35 45 mW 1A 320 400 480 mW T=300 K 200 mA qCW 10 20 30 ns V Item Condition Peak Wavelength FWHM Quasi-CW Optical Power Pulsed Optical Power Switching Time Operation Voltage Operating Temperature Emitting Area Soldering Temperature Package Unit µm nm -240 … +50 °C 300x300 µm 180 °C SMD type package 3x3 mm based on high thermal conductivity ceramics Operating Regime Quasi-CW • • Maximum current 220 mA Recommended current 150-200mA Pulsed • 06.10.2010 LED34-SMD3 Maximum current 1 A (puls lenght 500 ns, repetition rate 2kHz) 1 of 2 Typical Performance Curves Package • Tiny package for surface mounting • Anode and cathode are led to the metalized areas on the back side of the ceramic surface • Material – Low Temperature Co-fired Ceramic (LTCC): - thermal conductivity 25 W/mK - thermoresistance 8 °C/W 06.10.2010 LED34-SMD3 2 of 2