LED36-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement. LED36-SMD3 has a stable ouput power and a lifetime more then 80000 hours. Features • • • • Structure: InAsSb/InAsSbP Peak Wavelength: typ. 3.65 µm Optical Ouput Power: typ. 30 µW qCW Package: TO-18, with PR and without window Specifications T=300 K 150 mA CW Min. 3.60 0.40 Rating Typ. 3.65 0.50 Max. 3.70 0.60 200 mA qCW 20 30 40 µW 1A 180 200 220 mW T=300 K 200 mA qCW 10 0.2 20 - 30 1.0 ns V Item Condition Peak Wavelength FWHM Quasi-CW Optical Power Pulsed Optical Power Switching Time Operation Voltage Operating Temperature Emitting Area Soldering Temperature Package Unit µm µm -240 … +50 °C 300x300 µm 180 °C TO-18, with parabol reflector and without window (Unit: mm) Operating Regime Quasi-CW • • Maximum current 220 mA Recommended current 150-200mA Pulsed • 24.11.2010 LED36-PR Maximum current 1 A (puls lenght 500 ns, repetition rate 2kHz) 1 of 2 Typical Performance Curves 24.11.2010 LED36-PR 2 of 2