LED23-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. LED23-SMD3 has a stable ouput power and a lifetime more then 80000 hours. Features • • • • Structure: GaInAsSb/AlGaAsSb Peak Wavelength: typ. 2.35 µm Optical Ouput Power: typ. 0.8 mW qCW Package: SMD 3x3 mm Specifications T=300 K 150 mA CW Min. 2.33 170 Rating Typ. 2.35 220 Max. 2.39 270 200 mA qCW 0.6 0.8 1.0 mW 1A 12 15 20 mW T=300 K 200 mA qCW 10 20 30 ns V Item Condition Peak Wavelength FWHM Quasi-CW Optical Power Pulsed Optical Power Switching Time Operation Voltage Operating Temperature Emitting Area Soldering Temperature Package Unit µm nm -240 … +50 °C 300x300 µm 180 °C SMD type package 3x3 mm based on high thermal conductivity ceramics Operating Regime Quasi-CW • • Maximum current 220 mA Recommended current 150-200mA Pulsed • 06.10.2010 LED23-SMD3 Maximum current 1 A (puls lenght 500 ns, repetition rate 2kHz) 1 of 2 Typical Performance Curves Package • Tiny package for surface mounting • Anode and cathode are led to the metalized areas on the back side of the ceramic surface • Material – Low Temperature Co-fired Ceramic (LTCC): - thermal conductivity 25 W/mK - thermoresistance 8 °C/W 06.10.2010 LED23-SMD3 2 of 2