PX511-2 TECHNICAL DATA Photodiode Chip die PX511-2 is a PIN PD of planar and front illuniated structure with P electrode on top and N electrode on bottom. Features • • • InGaAs structure Spectral width: 1.0 – 1.65 µm Active Area: Ø 300µm Absolute Maximum Ratings Item Optical Current Forward Current Reverse Current ESD threshold Operating Temperature Storage Temperature Symbol IPD IF IR Topr Tstg Value 10 10 10 >300 -40 … +85 -50 … +125 Unit mA mA mA V °C °C Specifications (TC=22°C) Item Wavelength Range Active Area Responsivity (VR=5V, λ=1.31µm, φE=100µw) Capacitance (VR=5V, φE=0, f=1MHz) Dark Current (VR=5V, φE=0) Forward Voltage (IF=1mA) Reverse Breakdown Voltage (ID=10µA, φE=0) Rising time (VR=5V ,RL=50Ω) 27.07.2011 Value 1.00 .. 1.68 300 >0.9 5-6 0.3 – 1.0 0.6 – 0.8 35 - 40 ≤4 PX511-2 Unit µm µm A/W pF nA V V ns 1 of 1 Dimensions Item Die Size Die Thickness Bond Pad Diameter Photosensitive Area Extended Electrode Length P-side material N-side material Value 500 x 500 µm 175 +/- 5 µm 75 µm 300 µm 16 µm Au Au Packaging: Chips on gel-pack 27.07.2011 PX511-2 2 of 2