RU190N08S

RU190N08S
N-Channel Advanced Power MOSFET
Features
Pin Description
· 80V/190A
RDS (ON)=3.9mΩ(Typ.) @ VGS=10V
·Avalanche Rated
· Reliable and Rugged
· Lead Free and Green Devices Available
Applications
TO-263
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS
·High Speed Power Switching
Absolute Maximum Ratings
Symbol
N-Channel MOSFET
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
80
VGSS
Gate-Source Voltage
±25
Maximum Junction Temperature
175
°C
-55 to 175
°C
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
TC=25°C
①
190
V
A
Mounted on Large Heat Sink
IDP
300µs Pulsed Drain Current Tested
TC=25°C
TC=25°C
ID
PD
RθJC
Continue Drain Current
Maximum Power Dissipation
Thermal Resistance -Junction to Case
TC=100°C
②
700
①
190
A
①
TC=25°C
140
312
TC=100°C
156
W
0.48
°C/W
1225
mJ
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy ,Single Pulsed
Copyright Ruichips Semiconductor Co., Ltd
Rev. E – MAR., 2013
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RU190N08S
Electrical Characteristics
(TA=25°C Unless Otherwise Noted)
RU190N08S
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
80
V
VDS= 80V, VGS=0V
1
TJ=85°C
VGS(th)
IGSS
RDS(ON)
VGS=0V, IDS=250µA
④
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±25V, VDS=0V
Drain-Source On-state Resistance
VGS= 10V, IDS=40A
µA
30
2
3
3.9
4
V
±100
nA
4.8
mΩ
1.2
V
Diode Characteristics
④
VSD
trr
Diode Forward Voltage
ISD=40A, VGS=0V
Reverse Recovery Time
68
ns
130
nC
1.0
Ω
ISD=40A, dlSD/dt=100A/µs
qrr
Reverse Recovery Charge
Dynamic Characteristics
⑤
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VGS=0V,VDS=0V,F=1MHz
6800
1100
pF
490
38
VDD=35V, RL=35Ω,
IDS= 1A, VGEN= 10V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
22
ns
120
75
⑤
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
155
VDS=30V, VGS= 10V,
IDS=40A
45
nC
48
①Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
②Pulse width limited by safe operating area.
③Limited by TJmax, IAS =50A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C.
④Pulse test ; Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. E – MAR., 2013
2
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RU190N08S
Typical Characteristics
Drain Current
Ptot - Power (W)
ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Thermal Transient Impedance
ID - Drain Current (A)
Normalized Effective Transient
Safe Operation Area
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. E – MAR., 2013
Square Wave Pulse Duration (sec)
3
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RU190N08S
Typical Characteristics
Drain-Source On Resistance
ID - Drain Current (A)
RDS(ON) - On Resistance (mΩ)
Output Characteristics
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
Normalized Threshold Vlotage
RDS(ON) - On - Resistance (mW)
VDS - Drain-Source Voltage (V)
VGS - Gate - Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. E – MAR., 2013
Tj - Junction Temperature (°C)
4
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RU190N08S
Typical Characteristics
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
Capacitance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. E – MAR., 2013
QG - Gate Charge (nC)
5
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RU190N08S
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. E – MAR., 2013
6
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RU190N08S
Ordering and Marking Information
Device
Marking
Package
Packaging
Quantity
Reel Size
Tape width
RU190N08S
RU190N08S
TO-263
Tube
50
-
-
RU190N08S-R
RU190N08S
TO-263
Tape&Reel
800
13’’
24mm
Copyright Ruichips Semiconductor Co., Ltd
Rev. E – MAR., 2013
7
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RU190N08S
Package Information
TO-263-2L
SYMBOL
MM
MIN
NOM
INCH
MM
MAX
MIN
NOM
MAX
SYMBOL
INCH
MIN
NOM
MAX
MIN
NOM
MAX
0.102
A
4.40
4.57
4.70
0.173
0.180
0.185
L
2.00
2.30
2.60
0.079
0.090
A1
0
0.10
0.25
0
0.004
0.010
L3
1.17
1.27
1.40
0.046
0.050
0.055
A2
2.59
2.69
2.79
0.102
0.106
0.110
L1
-
-
1.70
-
-
0.067
b
0.77
-
0.90
0.030
-
0.035
L4
0.25BSC
0.01BSC
b1
1.23
-
1.36
0.048
-
0.052
L2
2.50REF.
0.098REF.
c
0.34
-
0.47
0.013
-
0.019
θ
0°
-
8°
0°
-
8°
C1
1.22
-
1.32
0.048
-
0.052
θ1
5°
7°
9°
5°
7°
9°
D
8.60
8.70
8.80
0.338
0.343
0.346
θ2
1°
3°
5°
1°
3°
5°
E
10.00
10.16
10.26
0.394
0.4
0.404
DEP
0.05
0.10
0.20
0.002
0.004
0.008
Øp1
1.40
1.50
1.60
0.055
0.059
0.063
e
H
2.54BSC
14.70
15.10
0.1BSC
15.50
0.579
0.594
0.610
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. E – MAR., 2013
8
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RU190N08S
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
Rev. E – MAR., 2013
9
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