RU6H1L

RU6H1L
N-Channel Advanced Power MOSFET
Features
Pin Description
•600V/1.2A,
RDS (ON) =10Ω (Typ.) @ VGS=10V
• Gate charge minimized
• Low Crss( Typ. 4pF)
• Extremely high dv/dt capability
TO-252
• 100% avalanche tested
• Lead Free and Green Available
Applications
• High efficiency switch mode power
supplies
• Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
600
VGSS
Gate-Source Voltage
±30
Maximum Junction Temperature
150
°C
-55 to 150
°C
1.2
A
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
PD
RθJC
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
TC=25°C
TC=25°C
①
4.8
V
A
②
TC=25°C
1.2
TC=100°C
0.78
TC=25°C
31
TC=100°C
13
A
W
4.0
°C/W
1.5
mJ
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – DEC., 2012
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RU6H1L
Electrical Characteristics
Symbol
(TC=25°C Unless Otherwise Noted)
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
④
Test Condition
RU6H1L
Min.
VGS=0V, IDS=250µA
Typ.
1
TJ=85°C
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±30V, VDS=0V
Drain-Source On-state Resistance
VGS=10V, IDS=0.6A
30
2
Unit
V
600
VDS=600V, VGS=0V
Gate Threshold Voltage
Max.
3
10
µA
4
V
±100
nA
11.5
Ω
1.4
V
Diode Characteristics
④
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
ISD=1.2A, VGS=0V
195
ns
0.55
µC
VGS=0V,VDS=0V,F=1MHz
10
Ω
VGS=0V,
VDS=300V,
Frequency=1.0MHz
135
ISD=1.2A, dlSD/dt=100A/µs
Reverse Recovery Charge
⑤
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Qg
4
VDD=300V, RL=250Ω,
IDS=1.2A, VGEN=10V,
RG=25Ω
20
15
ns
30
⑤
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
pF
7
Turn-off Fall Time
Gate Charge Characteristics
23
5.5
VDS=480V, VGS= 10V,
IDS=1.2A
0.7
nC
2.7
①Pulse width limited by safe operating area.
②Current limited by maximum junction temperature.
③Limited by TJmax, IAS =1.75A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test ; Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – DEC., 2012
2
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RU6H1L
Typical Characteristics
Drain Current
Ptot - Power (W)
ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
ID - Drain Current (A)
Normalized Effective Transient
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – DEC., 2012
Square Wave Pulse Duration (sec)
3
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RU6H1L
Typical Characteristics
Drain-Source On Resistance
ID - Drain Current (A)
RDS(ON) - On Resistance (Ω)
Output Characteristics
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
RDS(ON) - On - Resistance (Ω)
Normalized Threshold Voltage
Drain-Source On Resistance
VGS - Gate-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – DEC., 2012
Tj - Junction Temperature (°C)
4
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RU6H1L
Typical Characteristics
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
Capacitance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – DEC., 2012
QG - Gate Charge (nC)
5
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RU6H1L
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – DEC., 2012
6
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RU6H1L
Ordering and Marking Information
Device
Marking
Package
Packaging
Quantity
Reel Size
Tape width
RU6H1L
RU6H1L
TO-252
Tape&Reel
2500
13’’
16mm
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – DEC., 2012
7
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RU6H1L
Package Information
TO252-2L
SYMBOL
MM
MM
INCH
SYMBOL
MIN
MAX
MIN
MAX
A
2.200
2.400
0.087
0.094
L
A1
0.000
0.127
0.000
0.005
L1
b
0.660
0.860
0.026
0.034
L2
INCH
MIN
MAX
MIN
MAX
9.800
10.400
0.386
0.409
2.900 REF.
1.400
1.700
1.600 REF.
0.114 REF.
0.055
0.067
C
0.460
0.580
0.018
0.023
L3
D
6.500
6.700
0.256
0.264
L4
0.600
1.000
0.024
0.063REF.
0.039
D1
5.100
5.460
0.201
0.215
Φ
1.100
1.300
0.043
0.051
θ
0°
8°
0°
8°
E
6.000
6.200
0.236
0.244
h
0.000
0.300
0.000
0.012
e
2.186
2.386
0.086
0.094
V
D2
4.830 REF.
0.190 REF.
5.350 REF.
0.211 REF.
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – DEC., 2012
8
www.ruichips.com
RU6H1L
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – DEC., 2012
9
www.ruichips.com