RU120N15R

RU120N15R
N-Channel Advanced Power MOSFET
Features
Pin Description
· 150V/120A
RDS (ON)=15mΩ(Typ.) @ VGS=10V
·Avalanche Rated
· Reliable and Rugged
· Lead Free and Green Devices Available
Applications
TO-220
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS
·High Speed Power Switching
Absolute Maximum Ratings
Symbol
N-Channel MOSFET
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
150
VGSS
Gate-Source Voltage
±25
Maximum Junction Temperature
175
°C
-55 to 175
°C
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
TC=25°C
①
120
V
A
Mounted on Large Heat Sink
IDP
300µs Pulsed Drain Current Tested
TC=25°C
TC=25°C
ID
PD
RθJC
Continue Drain Current
Maximum Power Dissipation
Thermal Resistance -Junction to Case
TC=100°C
②
400
①
120
A
①
100
TC=25°C
312
TC=100°C
156
W
0.48
°C/W
441
mJ
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy ,Single Pulsed
Copyright Ruichips Semiconductor Co., Ltd
Rev. D – NOV., 2012
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RU120N15R
Electrical Characteristics
(TA=25°C Unless Otherwise Noted)
RU120N15R
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
150
V
VDS= 150V, VGS=0V
1
TJ=85°C
VGS(th)
IGSS
RDS(ON)
VGS=0V, IDS=250µA
④
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±25V, VDS=0V
Drain-Source On-state Resistance
VGS= 10V, IDS=60A
µA
30
2
3
15
4
V
±100
nA
17
mΩ
1.2
V
Diode Characteristics
④
VSD
trr
Diode Forward Voltage
ISD=60 A, VGS=0V
Reverse Recovery Time
68
ns
130
nC
1.0
Ω
ISD=60A, dlSD/dt=100A/µs
qrr
Reverse Recovery Charge
Dynamic Characteristics
⑤
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VGS=0V,VDS=0V,F=1MHz
6600
900
pF
480
21
VDD=35V, RL=35Ω,
IDS= 1A, VGEN= 10V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
40
ns
110
69
⑤
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
155
VDS=30V, VGS= 10V,
IDS=60A
45
nC
48
①Calculated continuous current based on maximum allowable junction temperature. The package
limitation current is 75A.
②Pulse width limited by safe operating area.
③Limited by TJmax, IAS =30A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C.
④Pulse test ; Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. D – NOV., 2012
2
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RU120N15R
Typical Characteristics
Drain Current
Ptot - Power (W)
ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Thermal Transient Impedance
ID - Drain Current (A)
Normalized Effective Transient
Safe Operation Area
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. D – NOV., 2012
Square Wave Pulse Duration (sec)
3
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RU120N15R
Typical Characteristics
Drain-Source On Resistance
ID - Drain Current (A)
RDS(ON) - On Resistance (mΩ)
Output Characteristics
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
Normalized Threshold Vlotage
RDS(ON) - On - Resistance (mΩ)
VDS - Drain-Source Voltage (V)
VGS - Gate - Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. D – NOV., 2012
Tj - Junction Temperature (°C)
4
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RU120N15R
Typical Characteristics
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
Capacitance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. D – NOV., 2012
QG - Gate Charge (nC)
5
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RU120N15R
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. D – NOV., 2012
6
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RU120N15R
Ordering and Marking Information
Device
Marking
Package
Packaging
Quantity
Reel Size
Tape width
RU120N15R
RU120N15R
TO-220
Tube
50
-
-
Copyright Ruichips Semiconductor Co., Ltd
Rev. D – NOV., 2012
7
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RU120N15R
Package Information
TO-220FB-3L
SYMBOL
A
MM
MM
INCH
MIN
NOM
MAX
MIN
NOM
MAX
4.40
4.57
4.70
0.173
0.180
0.185
SYMBOL
Øp1
INCH
MIN
NOM
MAX
MIN
NOM
MAX
1.40
1.50
1.60
0.055
0.059
0.063
A1
1.27
1.30
1.33
0.050
0.051
0.052
e
2.54BSC
0.1BSC
A2
2.35
2.40
2.50
0.093
0.094
0.098
e1
5.08BSC
0.2BSC
b
0.77
-
0.90
0.030
-
0.035
H1
6.40
6.50
6.60
0.252
0.256
0.260
b2
1.23
-
1.36
0.048
-
0.054
L
12.75
-
13.17
0.502
-
0.519
-
-
3.95
-
-
0.156
C
0.48
0.50
0.52
0.019
0.020
0.021
L1
D
15.40
15.60
15.80
0.606
0.614
0.622
L2
D1
9.00
9.10
9.20
0.354
0.358
0.362
Øp
3.57
3.60
3.63
0.141
0.142
0.143
DEP
0.05
0.10
0.20
0.002
0.004
0.008
Q
2.73
2.80
2.87
0.107
0.110
0.113
E
9.70
9.90
10.10
0.382
0.389
0.398
θ1
5°
7°
9°
5°
7°
9°
θ2
1°
3°
5°
1°
3°
5°
E1
-
8.70
-
-
0.343
-
E2
9.80
10.00
10.20
0.386
0.394
0.401
2.50REF.
0.098REF.
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. D – NOV., 2012
8
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RU120N15R
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
Rev. D – NOV., 2012
9
www.ruichips.com