RU120N15R N-Channel Advanced Power MOSFET Features Pin Description · 150V/120A RDS (ON)=15mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications TO-220 ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Absolute Maximum Ratings Symbol N-Channel MOSFET Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 150 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current TC=25°C ① 120 V A Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested TC=25°C TC=25°C ID PD RθJC Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case TC=100°C ② 400 ① 120 A ① 100 TC=25°C 312 TC=100°C 156 W 0.48 °C/W 441 mJ Drain-Source Avalanche Ratings ③ EAS Avalanche Energy ,Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 www.ruichips.com RU120N15R Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU120N15R Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current 150 V VDS= 150V, VGS=0V 1 TJ=85°C VGS(th) IGSS RDS(ON) VGS=0V, IDS=250µA ④ Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=60A µA 30 2 3 15 4 V ±100 nA 17 mΩ 1.2 V Diode Characteristics ④ VSD trr Diode Forward Voltage ISD=60 A, VGS=0V Reverse Recovery Time 68 ns 130 nC 1.0 Ω ISD=60A, dlSD/dt=100A/µs qrr Reverse Recovery Charge Dynamic Characteristics ⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,F=1MHz 6600 900 pF 480 21 VDD=35V, RL=35Ω, IDS= 1A, VGEN= 10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics 40 ns 110 69 ⑤ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VGS=0V, VDS= 30V, Frequency=1.0MHz 155 VDS=30V, VGS= 10V, IDS=60A 45 nC 48 ①Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 75A. ②Pulse width limited by safe operating area. ③Limited by TJmax, IAS =30A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C. ④Pulse test ; Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 2 www.ruichips.com RU120N15R Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient Safe Operation Area VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU120N15R Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ) VDS - Drain-Source Voltage (V) VGS - Gate - Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU120N15R Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU120N15R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 6 www.ruichips.com RU120N15R Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU120N15R RU120N15R TO-220 Tube 50 - - Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 7 www.ruichips.com RU120N15R Package Information TO-220FB-3L SYMBOL A MM MM INCH MIN NOM MAX MIN NOM MAX 4.40 4.57 4.70 0.173 0.180 0.185 SYMBOL Øp1 INCH MIN NOM MAX MIN NOM MAX 1.40 1.50 1.60 0.055 0.059 0.063 A1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54BSC 0.1BSC A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08BSC 0.2BSC b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519 - - 3.95 - - 0.156 C 0.48 0.50 0.52 0.019 0.020 0.021 L1 D 15.40 15.60 15.80 0.606 0.614 0.622 L2 D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113 E 9.70 9.90 10.10 0.382 0.389 0.398 θ1 5° 7° 9° 5° 7° 9° θ2 1° 3° 5° 1° 3° 5° E1 - 8.70 - - 0.343 - E2 9.80 10.00 10.20 0.386 0.394 0.401 2.50REF. 0.098REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 8 www.ruichips.com RU120N15R Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. D – NOV., 2012 9 www.ruichips.com