RU6H9P N-Channel Advanced Power MOSFET MOSFET Features Pin Description •600V/9.5A, RDS (ON) =0.7Ω (Typ.) @ VGS=10V • Gate charge minimized • Low Crss( Typ. 20pF) • Extremely high dv/dt capability • 100% avalanche tested TO-220F • Lead Free and Green Available Applications • High efficiency switch mode power supplies • Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 9.5 A TC=25°C 38 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID PD RθJC Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case ① V A ① TC=25°C 9.5 TC=100°C TC=25°C 6.2 30 TC=100°C 12 ① A W 4.2 °C/W 10 mJ Drain-Source Avalanche Ratings EAS ② Avalanche Energy, Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 www.ruichips.com RU6H9P Electrical Characteristics Symbol (TC=25°C Unless Otherwise Noted) Parameter Test Condition RU6H9P Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ③ VGS=0V, IDS=250µA V 600 VDS= 600V, VGS=0V 1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±30V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=4.75A 30 2 3 0.7 µA 4 V ±100 nA 0.8 Ω 1.2 V Diode Characteristics VSD ③ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=9.5A, VGS=0V ISD=9.5A, dlSD/dt=100A/µs 450 ns 4.2 µC 10 Ω ④ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS= 300V, Frequency=1.0MHz 1570 190 pF 20 40 VDD=300V, RL=32Ω, IDS=9.5A, VGEN= 10V, RG=25Ω Turn-off Fall Time 60 ns 180 80 ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 30 VDS=480V, VGS= 10V, IDS=9.5A 5 nC 14 ①Current limited by maximum junction temperature. ②Limited by TJmax, IAS =4.5A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 2 www.ruichips.com RU6H9P Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU6H9P Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (Ω) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance () Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU6H9P Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU6H9P Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 6 www.ruichips.com RU6H9P Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU6H9P RU6H9P TO-220F Tube 50 - - Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 7 www.ruichips.com RU6H9P Package Information TO-220F-3L SYMBOL MM INCH MM MIN NOM MAX MIN NOM MAX SYMBOL MIN NOM INCH MAX MIN NOM MAX E 9.96 10.16 10.36 0.392 0.400 0.408 Øp3 - 3.450 - - 0.136 - A 4.50 4.70 4.90 0.177 0.185 0.193 θ1 5° 7° 9° 5° 7° 9° A1 2.34 2.54 2.74 0.092 0.100 0.108 θ2 - 45° - - 45° - A2 0.95 1.05 1.15 0.037 0.041 0.045 DEP 0.05 0.10 0.15 0.002 0.004 0.006 A3 0.42 0.52 0.62 0.017 0.020 0.024 F1 1.90 2.00 2.10 0.075 0.079 0.083 A4 2.65 2.75 2.85 0.104 0.108 0.112 F2 13.61 13.81 14.01 0.536 0.544 0.552 c - 0.50 - - 0.020 - F3 3.20 3.30 3.40 0.126 0.130 0.134 D 15.67 15.87 16.07 0.617 0.625 0.633 G 3.25 3.45 3.65 0.128 0.136 0.144 Q 8.80 9.00 9.20 0.346 0.354 0.362 G1 5.90 6.00 6.10 0.232 0.236 0.240 H1 6.48 6.68 6.88 0.255 0.263 0.271 G2 6.90 7.00 7.10 0.272 0.276 0.280 b1 1.17 1.20 0.046 0.047 0.048 b2 0.77 0.8 0.85 0.030 0.031 0.033 e 2.54BSC 0.1BSC Øp - 3.183 - - 0.125 - 1.24 L 12.78 12.98 13.18 0.503 0.511 0.519 b3 1.10 1.30 1.50 0.043 0.051 0.059 D1 8.99 9.19 9.39 0.354 0.362 0.370 E1 9.8 10.00 10.20 0.386 0.394 0.412 Øp1 1.40 1.50 1.60 0.055 0.059 0.063 K1 0.75 0.8 0.85 0.030 0.031 0.033 Øp2 1.15 1.20 1.25 0.045 0.047 0.049 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 8 www.ruichips.com RU6H9P Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. A – FEB., 2012 9 www.ruichips.com