High Power PIN Diodes - Skyworks Solutions, Inc.

Applications
• Series/shunt elements
in high power HF/VHF/
UHF transmit/receive
(T/R) switches
High Power PIN Diodes
Features
Description
• Very low thermal
resistance for excellent
power handling: 40 W
C/W typical
• Low series resistance
– SMP1324-087LF:
0.4 W @ 50 mA
– SMP1371-087LF:
0.5 W @ 10 mA
– SMP1302-085LF:
1.5 W @ 100 mA
• Suitable as series
elements in high
power switches
– SMP1324-087LF:
35 W CW
– SMP1371-087LF:
23 W CW
– SMP1345-087LF:
10W CW
• Suitable as shunt
elements in high
power switches
– SMP1302-085LF:
50 W CW
• Excellent distortion
performance
• Lead (Pb)-free, RoHScompliant, Green™
QFN 2 x 2 mm
packages
• ESD Class 1 C, human
body model
Skyworks’ SMP1324-087LF, SMP1371-087LF and SMP1302-085LF PIN diodes are
designed for use in high-power-handling switches from 1–900 MHz. SMP1324-087LF
and SMP1371-087LF are optimized for use as series diodes. SMP1302-085LF is optimized
for use as a shunt diode. Due to their thermally-enhanced package designs, these diodes
have very low thermal resistance which enables them to handle very large input power.
The SMP1345-087LF is ideally suited for use as a high isolation, series switching
element. The SMP1345-087LF has a 10 micron nominal I layer thickness, which enables
it to switch impedance very rapidly while handling large input signals, when the exposed
paddle of the diode is connected to a printed circuit board which provides an adequately
large thermal conductance to a heatsink to maintain the die temperature to be less than
150 °C. Minority carrier lifetime is 100 ns typical, series resistance at 10 mA bias current is
1.5 Ω typical and total capacitance is less than 0.2 pF maximum.
The SMP1371-087LF has a 12 micron nominal I layer thickness, which enables it to
handle input signals up to 23 W CW when the device is mounted as a series element in
a switch built on a printed circuit board which has a relatively high thermal conductance,
such as Rogers 5880. In the identical circuit constructed on FR4 printed circuit board
material the maximum input power is 20 W CW. Minority carrier lifetime is 200 ns
minimum, series resistance at 10 mA bias current is 0.5 Ω maximum and total capacitance
is 0.9 pF typical. The SMP1371-087LF is rated to dissipate 2 W maximum.
The SMP1324-087LF has a 100 micron nominal I layer thickness, which enables it
to handle input signals up to 35 W CW when the device is mounted as a series element in
a switch built on a printed circuit board which has a relatively high thermal conductance,
such as Rogers 5880. In the identical circuit constructed on FR4 printed circuit board
material the maximum input power is 30 W CW. Minority carrier lifetime is 6 µs typical,
series resistance at 50 mA bias current is 0.4 Ω typical and total capacitance is 0.9 pF
typical. The SMP1324-087LF is rated to dissipate 2 W maximum.
The SMP1302-085LF is ideally suited for use as a shunt switching element. The
SMP1302-085LF has a 50 micron nominal I layer thickness, which enables it to handle
input signals as large as 50 W CW when the exposed paddle of the diode is connected
to a printed circuit board which provides an adequately large thermal conductance to
a heat sink to maintain the die temperature to be less than 150 °C. Minority carrier
lifetime is 700 ns typical, series resistance at 100 mA bias current is 1 Ω typical and total
capacitance is less than 0.3 pF.
Design information for high power switches may be found in the Skyworks
Application Note, Design with PIN Diodes, document number 200312.
Skyworks Green™ products are compliant with all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks
Definition of Green™, document number SQ04-0074.
Package Characteristics
The 085LF package is a 2 x 2 x 0.9 mm, surface mount
plastic package. This package has three terminals, one
of which is an exposed paddle which is the cathode
contact, the remaining two of which are each connected
to the anode of the diode. The exposed paddle provides
a very low thermal resistance path from the cathode of
the diode to the environment external to the die. The
two anode contacts are situated on opposite sides of the
exposed paddle, which is optimal for connecting two
transmission line sections together via a shunt PIN diode.
The 087LF package is a 2 x 2 x 0.9 mm surface mount
QFN package with an exposed paddle. The die is
mounted directly onto this solid metal paddle, which
provides a very low thermal resistance path from the die
to the environment external to the die. This low thermal
resistance permits the die to maintain low junction
temperature when dissipating significant power, thereby
enabling the die to handle high power input signals.
SMP1324-087LF Electrical Characteristics
SMP1324-087LF Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Units
Forward current
IF
–
200
mA
Dissipated power @ 25 °C
PD
–
2
W
Operating temperature
TA
–55
+85
°C
Storage temperature
TSTG
–55
+200
°C
Junction temperature
TJ
–55
+175
°C
SMP1324-087LF Electrical Specifications1 (TA = +25 °C, Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Forward voltage
VF
IF = 50 mA
–
0.9
1.2
V
Reverse leakage current
IR
VR = 200 V
–
10
μA
Series resistance
RS
IF = 50 mA, f = 100 MHz
–
0.40
0.75
W
Total capacitance
CT0
CT30
VR = 0 V, f = 100 MHz
VR = 30 V, f = 1 MHz
–
0.9
0.9
1.5
1.5
pF
pF
Minority carrier lifetime
TL
IF = 10 mA
2
6
–
μs
Parallel resistance
RP
VR = 0 V, f = 100 MHz
5
6
–
kW
I region width
W
–
–
100
–
μm
10
100
Note 1: Performance is guaranteed only under the conditions listed in this Table.
SMP1324-087LF Typical Performance Data @ 25 °C (Unless Otherwise Noted)
5
100
Series Resistance (Ω)
Capacitance (pF)
4
3
2
1
0
10
1.0
0.1
0
5
10
15
20
25
Reverse Voltage (V)
Capacitance vs. Reverse Voltage @ 1 MHz
30
0.1
1.0
Forward Current (mA)
Series Resistance vs. Forward Current @ 100 MHz
SMP1371-087LF Electrical Characteristics
SMP1371-087LF Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Units
Forward current
IF
–
200
mA
Reverse voltage
VR
35
V
Dissipated power @ 25 °C
PD
–
2
W
Operating temperature
TA
–40
+85
°C
Storage temperature
TSTG
–55
+200
°C
Junction temperature
TJ
–55
+175
°C
SMP1371-087LF Electrical Specifications1 (TA = +25 °C, Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Forward voltage
VF
IF = 50 mA
–
–
1.0
V
Reverse leakage current
IR
VR = 35 V
–
–
10
μA
Series resistance
RS
IF = 10 mA, f = 100 MHz
–
–
0.5
W
Total capacitance
CT20
VR = 20 V, f = 1 MHz
–
–
1.2
pF
Minority carrier lifetime
TL
IF = 10 mA
200
–
–
μs
Parallel resistance
RP
VR = 0 V, f = 100 MHz
2.5
–
–
kW
I region width
W
–
–
12
–
μm
Note 1: Performance is guaranteed only under the conditions listed in this Table.
SMP1371-087LF Typical Performance Data @ 25 °C (Unless Otherwise Noted)
2
1.6
Capacitance (pF)
Series Resistance (Ohms)
10
1
1.2
0.8
0.4
0
0.1
0.1
1
10
Forward Current (mA)
Series Resistance vs. Forward Current
100
0
5
10
15
20
25
Reverse Voltage (V)
Capacitance vs. Reverse Voltage @ 1 MHz
30
SMP1302-085LF Electrical Characteristics
SMP1302-085LF Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Unit
Reverse voltage
VR
–
200
V
Forward current at 25 °C
IF
–
200
mA
CW power dissipation at 25 °C
PD
–
3
W
1 µs pulse power dissipation
PD
–
30
W
TSTORE
–65
+200
°C
TOP
–40
+150
°C
Storage temperature range
Operating temperature range
Performance is guaranteed only under the conditions listed in the specifications table and is not guaranteed under the full range(s) described by the Absolute Maximum specifications.
Exceeding any of the absolute maximum/minimum specifications may result in permanent damage to the device and will void the warranty.
SMP1302-085LF Electrical Specifications (TA = +25 °C, Unless Otherwise Noted)
Parameter
Reverse current
Symbol
IR
Condition
Min.
Typ.
Max.
Unit
VR = 200 V
–
–
10
µA
Capacitance
CT30
VR = 30 V, f = 1 MHz
–
–
0.3
pF
Resistance
RS10
IF = 10 mA, f = 100 MHz
–
–
3
W
Resistance
RS100
IF = 100 mA, f = 100 MHz
–
1.0
1.5
W
Forward voltage
VF
IF = 10 mA
–
0.8
–
V
Carrier lifetime
TL
IF = 10 mA
–
700
–
ns
I-Region width
W
–
50
–
µm
CW thermal resistance
QJC
40
°C/W
Pulse thermal resistance
QP
–
°C/W
–
Single 1 µs pulse
–
3.5
SMP1302-085LF Typical Performance Data @ 25 °C (Unless Otherwise Noted)
1000
0.8
100
Capacitance (pF)
Series Resistance (W)
0.7
10
1
1 MHz
0.6
0.5
0.4
0.3
1 GHz
100 MHz
0.2
0.1
0.1
0.01
0.1
1
10
100
Forward Current (mA)
Pulse Thermal Impedance (°C/W)
35
30
25
20
15
10
5
1
10
100
0
1
2
5
10
20
50
Reverse Voltage (V)
Series Resistance
vs. vs.
Current
@ 100
Series
Resistance
Current
@ MHz
100 MHz
0
0
1000
Pulse Width (µs)
Typical
Thermal
Impedance
TypicalPulse
Pulse
Thermal
Impedance
Capacitance
vs. vs.
Reverse
Voltage
Capacitance
Reverse
Voltage
100
SMP1345-087LF Electrical Characteristics
SMP1345-087LF Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Unit
Reverse voltage
VR
–
50
V
Forward current at 25 °C
IF
–
200
mA
CW power dissipation at 25 °C
PD
–
3
W
1 µs pulse power dissipation
PD
–
30
W
TSTORE
–65
+200
°C
TOP
–55
+150
°C
Storage temperature range
Operating temperature range
Performance is guaranteed only under the conditions listed in the specifications table and is not guaranteed under the full range(s) described by the Absolute Maximum specifications.
Exceeding any of the absolute maximum/minimum specifications may result in permanent damage to the device and will void the warranty.
SMP1345-087LF Electrical Specifications (TA = +25 °C, Unless Otherwise Noted)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Reverse current
IR
VR = 50 V
–
–
10
µA
Capacitance
CT5
VR = 5 V, f = 1 MHz
–
0.16
0.2
pF
Resistance
RS1
IF = 1 mA, f = 100 MHz
–
3.5
–
W
Resistance
RS10
IF = 10 mA, f = 100 MHz
–
1.5
2.0
W
Forward voltage
VF
IF = 10 mA
–
0.89
–
V
Carrier lifetime
TL
IF = 10 mA
–
100
–
ns
I-Region width
W
–
10
–
µm
CW thermal resistance
QJC
45
°C/W
Pulse thermal resistance
QP
–
°C/W
–
Single 1 µs pulse
–
100
Series Resistance (Ω)
Capacitance (pF)
0.20
0.15
0.10
0.05
4.0
0
5
10
15
20
Reverse Voltage (V)
Capacitance vs. Reverse Voltage
25
30
10
1
0.1
0.01
0.01
0.1
1
10
Forward Current (mA)
Series Resistance vs. Current
100
High Power T/R Switch Design Applications
Power Handling
Two SPDT T-R switches were fabricated utilizing PIN
diodes, as shown in the schematic diagram below. Both
switches utilize a single, series PIN diode on the transmit
side of the switch, as well as a series-shunt PIN diode pair
on the receive side of the switch. One of the switches
contains SMP1324-087LF PIN diodes in the series diode
positions. The other switch has SMP1371-087LF PIN
diodes in these positions. Both switch assemblies use an
SMP1302-085LF in the shunt position on the receive side
of the switch. These switches were each built using two different
printed circuit board (PCB) substrates: Rogers 5880 and
FR4, each of which had dielectric thickness of 0.010
inches. The bottom-most layer of each PCB assembly was
FR4 material of approximately 0.052 inches thickness,
utilized as a carrier and PCB stiffener. Both types of PCBs
had metal heat sinks attached to their undersides.
Part Number
With the Rogers 5880 PCBs, the switches were subjected
to the power levels listed below for the durations also
listed below, with no degradation:
Incident Power
Duration
SMP1324-087LF
35 W
24 hours
SMP1371-087LF
23 W
24 hours
Incident Power
Duration
SMP1324-087LF
35 W
24 hours
SMP1371-087LF
23 W
24 hours
For the PCBs entirely comprising FR4, these power
levels were as shown below, due to the higher thermal
resistance of the FR4.
0
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
Tx IN to ANT Insertion Loss State
-0.2
Insertion Loss (dB)
Isolation (dB)
Part Number
ANT to Tx IN Isolation
ANT to Rx OUT Isolation
-0.4
-0.6
-0.8
ANT to Rx OUT Insertion Loss State
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Frequency (GHz)
Forward Voltage vs. Forward Current
0.9
1.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Frequency (GHz)
Typical Pulse Thermal Impedance
0.9
1.0
T/R Switch Circuit Diagram
Port 1
Antenna
±I BIAS
C = 0.1 µF
Port 3
Tx Input
C = 1000 pF
±I BIAS
R = 300 Ω
L = 560 nH
L = 560 nH
C = 1000
pF
C = 0.1 µF
L = 560 nH
Port 2
Rx Output
SMP1324-087 LF
or
SMP1371-087 LF
2 plcs
C = 1000 pF
SMP1302-085 LF
-087LF Outline Drawing
2
1
C
Pin 1
Indicator
A
2
Seating Plane
B
Exposed Pad
1.15 + 0.1/–0.15
0.0 – 0.05
Detail A
2
1.6 + 0.1/–0.15
2
1
0.05 C
2X
0.90 ± 0.1
2X
2X
0.10 C
0.05 C
Top View
0.20 Min.
3
0.20
0.08 C
Side View
Bottom View
0.4 ± 0.1
0.30 ± 0.05
5
0.10 M C A B
Detail A
All measurements are in millimeters.
Dimensioning and tolerancing according to ASME Y14.5M-1994.
Coplanarity applies to the exposed heat sink slug as well as the terminals..
Dimension applies to metalized terminal and is measured between 0.10 mm and 0.30 mm from terminal tip.
-087LF Suggested Land Pattern
0.25
Part Outline
0.55
Exposed Soldering
Area, Typical
2X 0.80
Pin 1
Pin 2
0.80
0.35
S1988
S1989
-085LF Outline Drawing
-085LF Suggested Land Pattern
3
2X 0.60
1
Part Outline
2
2 ± 0.2
RF1
2X 0.55
Exposed Soldering
Area Typ.
2X 0.27
Pin 1
2 ± 0.2
2X 0.85
Pin 3
Pin 2
R0.20
2X 0.25
0.88 ± 0.1
Orientation
Indicator
0.5 ± 0.15
Exposed Pad
Detail B
1.7 ± 0.15
3
1
2
0.4 ± 0.1
0.27 ± 0.15
Detail B
Note: Dimensions are in millimeters.
Application Notes
For additional information, please refer to the
following Application Notes.
Solder Reflow Information
Discrete Devices and IC Switch/Attenuators Tape and
Reel Package Orientation
Brochures
RF Diode Design Guide
Published Articles
RF/Microwave Solid State Switches: Part 1
Solid State RF/Microwave Switch Technology: Part 2
Design with PIN Diodes
PIN Diodes for High Power T/R Switches
Green Initiative™
Through our Green Initiative,™ we are committed to manufacturing products that comply with global
government directives and industry requirements.
Skyworks is continuously innovating RF, analog and mixed-signal ICs. For the latest product introductions and
information about Skyworks, visit our Web site at www.skyworksinc.com
For additional information on our broad overall product portfolio, please contact your local sales office or email us at
[email protected].
Skyworks Solutions, Inc.
20 Sylvan Road, Woburn, MA 01801
USA: (781) 376-3000 • Asia: 886 2 2735 0399
Europe: 33 (0)1 43548540 • Fax: (781) 376-3100
Email: [email protected] • www.skyworksinc.com
BRO399-11A 5/11
Printed on Recycled Paper.